Vishay Telefunken BAY135 Datasheet
Silicon Planar Diode
Features
D
Very low reverse current
Applications
Protection circuits, delay circuits
BAY135
Vishay Telefunken
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Peak reverse voltage, non repetitive V
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Average forward current f=50Hz I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
RSM
RRM
R
FSM
FAV
stg
j
140 V
140 V
125 V
2 A
200 mA
200
–65...+200
350 K/W
°
C
°
C
Document Number 85552
Rev. 3, 18-Mar-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
BAY135
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current Ex300lx, V
R
Ex300lx, VR, Tj=125°C I
Ex300lx, VR=60V I
Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=1MHz C
Characteristics (Tj = 25_C unless otherwise specified)
F
I
R
R
R
(BR)
D
140 V
1 V
3 nA
0.5
1 nA
5 pF
m
A
10000
VR=V
RRM
Scattering Limit
Tj – Junction Temperature ( °C )
R
I – Reverse Current ( nA )
94 9079
1000
100
10
1
0 40 80 120 160
Figure 1. Reverse Current vs. Junction Temperature
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
200
1000
Tj=25°C
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9078
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Cathode Identification
2.0
∅ 0.55 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85552
3.9 max.26 min.
26 min.
Rev. 3, 18-Mar-992 (3)
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