Vishay Telefunken BAW76 Datasheet
Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation l=4mm, TL=45°C P
l=4mm, TLx25°
Junction temperature T
Storage temperature range T
C P
BAW76
Vishay Telefunken
94 9367
RRM
R
FSM
FRM
F
FAV
V
V
j
stg
75 V
50 V
2000 mA
450 mA
300 mA
150 mA
440 mW
500 mW
200
–65...+200
°
C
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
Document Number 85551
Rev. 2, 01-Apr-99 1 (3)
thJA
www.vishay.de • FaxBack +1-408-970-5600
350 K/W
BAW76
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=50V I
VR=50V, Tj=150°C I
Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10mA, iR=1mA t
IF=10mA, VR=6V, iR=1mA,
R
=100
W
L
Dimensions in mm
Cathode Identification
F
R
R
(BR)
D
rr
t
rr
1 V
100 nA
100
m
75 V
1.7 2 pF
4 ns
2 ns
A
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
∅ 1.7 max.
∅ 0.55 max.
3.9 max.26 min.
26 min.
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85551
Rev. 2, 01-Apr-992 (3)
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