Vishay Telefunken BAW27 Datasheet

Silicon Epitaxial Planar Diode

Features

D

Low forward voltage drop

D

High forward current capability

Applications

BAW27

Vishay Telefunken

High speed switch and general purpose use in com­puter and industrial applications

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Forward current I
Average forward current VR=0 I
Power dissipation l=4mm, TL=45°C P

l=4mm, TLx25°
Junction temperature T
Storage temperature range T

C P

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient l=4mm, TL=constant R

thJA

RRM

R

FSM

F

FAV

V
V

stg

j

94 9367

75 V
60 V

4 A
600 mA
300 mA
440 mW
500 mW
200

–65...+200

350 K/W

°

C

°

C

Document Number 85548
Rev. 2, 01-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

BAW27

g

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=10mA V

IF=50mA V
IF=200mA V
IF=400mA V

Reverse current VR=60V I

VR=60V, Tj=100°C I
Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10...100mA, iR=0.1xI

Dimensions in mm

R

Cathode Identification

F
F
F

F
R
R

(BR)

D

t

rr

0.67 0.75 V

0.8 0.85 V

0.95 1.0 V

1.12 1.25 V
100 nA

50

m

75 V

4 pF
6 ns

A

technical drawings
according to DIN
specifications

94 9366

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35
Weight max. 0.3g

∅ 1.7 max.

∅ 0.55 max.

3.9 max.26 min.

26 min.

www.vishay.de • FaxBack [phone] Document Number 85548

Rev. 2, 01-Apr-992 (3)