Vishay Telefunken BAV99 Datasheet

Dual Surface Mount Switching Diode

g

Features

D

Fast switching speed

D

High conductance

D

Surface mount package ideally suited for
automatic insertion

D

Connected in series

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Non repetitive peak reverse voltage V
Repetitive peak reverse voltage

=Working peak reverse voltage
=DC Blocking voltage
Peak forward surge current tp=1s I

tp=1ms I

Average forward current half wave rectification with resistive

load and f≥50MHz, on ceramic sub­strate 10mmx8mmx0.7mm

Forward current on ceramic substrate

10mmx8mmx0.7mm

Power dissipation on ceramic substrate

10mmx8mmx0.7mm

Junction and storage
temperature range

=V

BAV99

Vishay Telefunken

94 8550

100 V

70 V

1 A

4.5 A

150 mA

250 mA

300 mW

–55...+150

V

RRM

RWM

=V

FSM
FSM

I

FAV

I

P

Tj=T

RM

R

F

tot

stg

°

C

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction ambient on ceramic substrate

10mmx8mmx0.7mm

Document Number 85547
Rev. 2, 06-Aug-99 1 (4)

R

thJA

www.vishay.de • FaxBack [phone]

430 K/W

BAV99

g

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Symbol Min Typ Max Unit

Forward voltage IF=1mA V

IF=10mA V
IF=50mA V
IF=150mA V

Reverse current VR=70V I

VR=70V, Tj=150°C I

VR=25V, Tj=150°C I
Diode capacitance VR=0, f=1MHz C
Reverse recovery time IF=10mA to IR=1mA,VR=6V,RL=100

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Characteristics (Tj = 25_C unless otherwise specified)

F
F
F

F
R
R
R

D

t

rr

715 mV
855 mV

1 V

1.25 V

2.5
50
30

m
m
m

1.5 pF

6 ns

A
A
A

1000

100

Tj=100°C

10

Tj=25°C

1

0.1

F

I – Forward Current ( mA )

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )14356

Figure 1. Forward Current vs. Forward Voltage

www.vishay.de • FaxBack [phone] Document Number 85547

Rev. 2, 06-Aug-992 (4)