Silicon Epitaxial Planar Diodes
Applications
General purposes
BAV200...BAV203
Vishay Telefunken
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Peak reverse voltage BAV200 V
BAV201 V
BAV202 V
BAV203 V
Reverse voltage BAV200 V
BAV201 V
BAV202 V
BAV203 V
Forward current I
Peak forward surge current tp=1s, Tj=25°C I
FSM
Forward peak current f=50Hz I
Junction temperature T
Storage temperature range T
RRM
RRM
RRM
RRM
R
R
R
R
F
FM
j
stg
60 V
120 V
200 V
250 V
50 V
100 V
150 V
200 V
250 mA
1 A
625 mA
175
–65...+175
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W
°
C
°
C
Document Number 85544
Rev. 3, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
BAV200...BAV203
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=50V BAV200 I
VR=100V BAV201 I
VR=150V BAV202 I
VR=200V BAV203 I
Tj=100°C, VR= 50V BAV200 I
Tj=100°C, VR= 100V BAV201 I
Tj=100°C, VR= 150V BAV202 I
Tj=100°C, VR= 200V BAV203 I
Breakdown voltage IR=100mA, tp/T=0.01, BAV200 V
tp=0.3ms
Diode capacitance VR=0, f=1MHz C
Differential forward
IF=10mA r
resistance
Reverse recovery time IF=IR=30mA, iR=3mA,
R
=100
W
L
BAV201 V
BAV202 V
BAV203 V
F
R
R
R
R
R
R
R
R
(BR)
(BR)
(BR)
(BR)
D
f
t
rr
1 V
100 nA
100 nA
100 nA
100 nA
15
15
15
15
m
m
m
m
60 V
120 V
200 V
250 V
1.5 pF
5
50 ns
A
A
A
A
W
Characteristics (Tj = 25_C unless otherwise specified)
1000
100
m
Scattering Limit
10
1
R
I – Reverse Current ( A )
0.1
0.01
0 40 80 120 160
94 9084
Figure 1. Reverse Current vs. Junction Temperature
Tj – Junction Temperature ( °C )
VR=V
RRM
200
1000
Tj=25°C
100
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9085
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Scattering Limit
2.0
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85544
Rev. 3, 01-Apr-992 (4)