Schottky Barrier Diode
Features
D
Integrated protection ring against
static discharge
D
Very low forward voltage
BAS286
Vishay Telefunken
Applications
Applications where a very low forward voltage
is required
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Peak forward surge current tp = 10 ms I
Repetitive peak forward current tp ≤ 1 s I
Forward current I
Average forward current I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
R
FSM
FRM
F
FAV
j
stg
96 12009
50 V
5 A
500 mA
200 mA
200 mA
125
–65...+150
320 K/W
°
C
°
C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.1mA V
IF=1mA V
IF=10mA V
IF=30mA V
IF=100mA V
Reverse current VR=40V I
Diode capacitance VR=1V, f=1MHz C
Document Number 85502
Rev. 3, 01-Apr-99 1 (4)
F
F
F
F
F
R
D
www.vishay.de • FaxBack +1-408-970-5600
300 mV
380 mV
450 mV
600 mV
900 mV
5
8 pF
m
A
BAS286
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
500
450
400
350
300
250
200
150
100
R
P – Reverse Power Dissipation ( mW )
VR = 50 V
PR–Limit
@100%V
R
=
thJA
540K/W
50
0
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15827
PR–Limit
@80%V
R
R
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
10000
10000
VR = V
RRM
1000
1000
m
100
100
10
10
R
I – Reverse Current ( A )
1
1
25 50 75 100 125 150
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15828
1000
100
10
1
F
I – Forward Current ( A )
0.1
0 0.5 1.0 1.5
Tj=150°C
Tj=25°C
VF – Forward Voltage ( V )15829
Figure 3. Forward Current vs. Forward Voltage
10
9
8
7
6
5
4
3
2
D
C – Diode Capacitance ( pF )
1
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15830
f=1MHz
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85502
Figure 4. Diode Capacitance vs. Reverse Voltage
Rev. 3, 01-Apr-992 (4)