Vishay Telefunken BAS283, BAS282, BAS281 Datasheet

Schottky Barrier Diodes

g

g

Features

D

Integrated protection ring against
static discharge

D

Low capacitance

D

Low leakage current

D

Low forward voltage drop

D

Very low switching time

BAS281...BAS283

Vishay Telefunken

Applications

General purpose and switching
Schottky barrier diode
HF–Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Reverse voltage BAS281 V

BAS282 V

BAS283 V
Peak forward surge current tp=1s I
Repetitive peak forward current I
Forward current I
Junction temperature T
Storage temperature range T

R
R

R
FSM
FRM

F

j

stg

96 12009

40 V
50 V

60 V
500 mA
150 mA

30 mA
125

–65...+150

°

C

°

C

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

320 K/W

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=0.1mA V

IF=1mA V

IF=15mA V
Reverse current VR=V
Diode capacitance VR=1V, f=1MHz C

Document Number 85500
Rev. 3, 01-Apr-99 1 (4)

Rmax

F
F
F

I

R

D

www.vishay.de • FaxBack [phone]

330 mV
410 mV

1 V

200 nA

1.6 pF

BAS281...BAS283

Vishay Telefunken

Characteristics (Tj = 25_C unless otherwise specified)

14

12

R

=

10

8

6

4

2

R

P – Reverse Power Dissipation ( mW )

0

thJA

540K/W

PR–Limit

@80%V

25 50 75 100 125 150

Tj – Junction Temperature ( °C )15794

VR = 60 V

PR–Limit

@100%V

R

R

Figure 1. Max. Reverse Power Dissipation vs.

Junction Temperature

1000.0

1000.0
VR = V

RRM

100.0

100.0

m

10.0

10.0

1.0

1.0

R

I – Reverse Current ( A )

0.1

0.1
25 50 75 100 125 150

25 50 75 100 125 150

Tj – Junction Temperature ( °C )15795

1000

100

10

1

0.1

F

I – Forward Current ( A )

0.01

Tj=150°C

Tj=25°C

0 0.5 1.0 1.5 2.0

VF – Forward Voltage ( V )15796

Figure 3. Forward Current vs. Forward Voltage

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

D

C – Diode Capacitance ( pF )

0.2
0

0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )15797

f=1MHz

Figure 2. Reverse Current vs. Junction Temperature

www.vishay.de • FaxBack [phone] Document Number 85500

Figure 4. Diode Capacitance vs. Reverse Voltage

Rev. 3, 01-Apr-992 (4)