Vishay Telefunken BAS20, BAS21, BAS19 Datasheet
Surface Mount Switching Diode
gg
RWM
g
g
Features
D
Silicon planar epitaxial high speed diode
D
For switching and general purpose applications
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Working peak reverse voltage BAS19 V
=DC Blocking voltage
Repetitive peak reverse voltage BAS19 V
Peak forward surge current t=1ms I
t=1s I
Repetitive peak forward current I
Average forward current tp<0.3ms I
Forward current T
Power dissipation T
Case=TL
=T
amb
Case=TL
=T
amb
(8mm from Case)
(8mm from Case)
Junction and storage
temperature range
BAS20
BAS21 200 V
BAS20 V
BAS21 V
BAS19–BAS21
Vishay Telefunken
94 8550
RWM
=V
RRM
RRM
RRM
FSM
FSM
FRM
FAV
I
P
Tj=T
R
F
tot
stg
100 V
150 V
120 V
200 V
250 V
2.5 A
0.5 A
625 mA
200 mA
400 mA
250 mW
–55...+150°C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient R
Document Number 85540
Rev. 1, 01-Apr-99 1 (4)
thJA
www.vishay.de • FaxBack +1-408-970-5600
500 K/W
BAS19–BAS21
g
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter T est Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
IF=200mA V
Reverse current VR=V
Reverse breakdown voltage IR=100mA, tp<0.3ms BAS19 V
Reverse recovery time IF=IR=10mA, RL=100W,
Diode capacitance VR=0, f= 1MHz C
Dynamic forward resistance IF=10mA r
Rmax
VR=V
, Tj= 150°C I
Rmax
IR=100mA BAS20 V
IR=100mA, VR<275V BAS21 V
VR=6V to IR=1mA. RL=100
W
F
F
I
R
R
(BR)R
(BR)R
(BR)R
t
rr
D
f
1.0 V
1.25 V
100 nA
100mA
120 V
200 V
250 V
50 ns
5 pF
5
W
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85540
2 (4)
Rev. 1, 01-Apr-99
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