Vishay Telefunken BAQ335, BAQ334, BAQ333 Datasheet
Silicon Planar Diodes
g
Features
D
Saving space
D
Hermetic sealed parts
D
Fits onto SOD 323 / SOT 23 footprints
D
Electrical data identical with the devices
BAQ33...BAQ35 / BAQ133...BAQ135
D
Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
BAQ333...BAQ335
Vishay Telefunken
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BAQ333 V
BAQ334 V
BAQ335 V
Peak forward surge current tp=1ms I
Forward current I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
35mm copper clad, 0.9 mm2 copper area per
electrode
R
R
R
R
FSM
F
stg
thJA
j
30 V
60 V
125 V
2 A
200 mA
200
–65...+200
500 K/W
°
C
°
C
Document Number 85538
Rev. 2, 01-April-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
BAQ333...BAQ335
g
R
m
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current Ex300lx, V
R
Ex300lx, VR, Tj=125°C I
Ex300lx, VR=15V BAQ333 I
Ex300lx, VR=30V BAQ334 I
Ex300lx, VR=60V BAQ335 I
Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms BAQ333 V
BAQ334 V
BAQ335 V
Diode capacitance VR=0, f=1MHz C
Characteristics (Tj = 25_C unless otherwise specified)
F
I
R
R
R
R
R
(BR)
(BR)
(BR)
D
1 3 nA
0.5 1 nA
0.5 1 nA
0.5 1 nA
40 V
70 V
140 V
1 V
0.5
3 pF
m
A
10000
VR=V
1000
100
10
R
I – Reverse Current ( nA )
1
0 40 80 120 160
94 9079
Figure 1. Reverse Current vs. Junction Temperature
RRM
Scattering Limit
200
Tj – Junction Temperature ( °C )
1000
Tj=25°C
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9078
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
2.0
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85538
Rev. 2, 01-Apr-992 (4)
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