Vishay Telefunken BA983, BA982 Datasheet
Silicon Planar Diodes
R
F
F
Features
D
Low differential forward resistance
D
Low diode capacitance
D
High reverse impedance
D
Quadro Melf package
BA982.BA983
Vishay Telefunken
Applications
Band switching in VHF–tuners
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
35 V
100 mA
150
–55...+150
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20V I
Diode capacitance f=100MHz, VR=1V C
f=100MHz, VR=3V BA982 C
BA983 C
Differential forward f=200MHz, IF=3mA BA982 r
resistance
BA983 r
f=200MHz, IF=10mA BA982 r
BA983 r
F
R
D
D
D
f
f
f
f
96 12009
°
C
°
C
1 V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7
1.2
0.5
0.9
W
W
W
W
Document Number 85534
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
BA982.BA983
Vishay Telefunken
100
W
10
1
f
r – Differential Forward Resistance ( )
0.1
0.1 1 10
94 9076
IF – Forward Current ( mA )
BA 983
f=200 MHz
T
j
Figure 1. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
=25°C
BA 982
100
3.0
2.5
2.0
1.5
1.0
D
C – Diode Capacitance ( pF )
94 9077
BA 983
0.5
0
0.1 1 10
VR – Reverse Voltage ( V )
f=100 MHz
T
=25°C
j
BA 982
100
Figure 2. Diode Capacitance vs. Reverse Voltage
96 12071
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85534
Rev. 2, 01-Apr-992 (3)
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