Vishay Telefunken BA779S, BA779 Datasheet
Silicon PIN Diodes
R
Features
D
Wide frequency range 10 MHz to 1 GHz
Applications
BA779.BA779S
Vishay Telefunken
Current controlled HF resistance in adjustable
attenuators
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=20mA V
Reverse current VR=30 V I
Diode capacitance f=100MHz, VR=0 C
Differential forward re-
sistance
Reverse impedance f=100MHz, VR=0 BA779 z
Minority carrier lifetime IF=10mA, IR=10mA
f=100MHz, IF=1.5mA r
BA779S z
F
R
D
f
r
r
t
R
F
j
stg
5 k
9 k
30 V
50 mA
125
–55...+125
500 K/W
0.5 pF
4
94 8550
°
C
°
C
1 V
50 nA
50
W
m
W
W
s
Document Number 85532
Rev. 3, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
BA779.BA779S
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
100
10
T
=25°C
amb
1
Scattering Limit
VF – Forward Voltage ( V )
F
I – Forward Current ( mA )
95 9735
0.1
0.01
0 0.4 0.8 1.2 1.6
Figure 1. Forward Current vs. Forward Voltage
10000
W
1000
100
f>20MHz
T
=25°C
10
j
2.0
20
0
–20
–40
–60
–80
a – Typical Cross Modulation Distortion ( dB )
95 9733
P–Circuitwith10 dBAttenuation
0204060
f2, modulated with 200 kHz, m=100% (MHz)
V
=40dBmV
0
f
=100MHzunmodulated
1
Figure 3. Typ. Cross Modulation Distortion vs
Frequency f
2
80
f
r – Differential Forward Resistance ( )
1
0.001 0.01 0.1 1
95 9734
IF – Forward Current ( mA )
10
Figure 2. Differential Forward Resistance vs.
Forward Current
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85532
Rev. 3, 01-Apr-992 (4)
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