Vishay Telefunken BA779-2 Datasheet

Silicon PIN Diodes

Features

D

Wide frequency range 10 MHz to 1 GHz

Applications

BA779–2

Vishay Telefunken

Current controlled HF resistance in adjustable
attenuators

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=20mA V
Reverse current VR=30 V I
Diode capacitance f=100MHz, VR=0 C
Differential forward re-

sistance
Reverse impedance f=100MHz, VR=0 z
Minority carrier lifetime IF=10mA, IR=10mA

f=100MHz, IF=1.5mA r

F

R

D
f

r

t

R

F

j

stg

5 k

30 V
50 mA

125

–55...+125

500 K/W

0.5 pF

4

94 8550

°

C

°

C

1 V

50 nA

50

W

m

W

s

Document Number 85531
Rev. 3, 01-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

BA779–2

Vishay Telefunken

Dimensions in mm

14384

top view

14388

www.vishay.de • FaxBack [phone] Document Number 85531

Rev. 3, 01-Apr-992 (3)