Vishay Telefunken BA683, BA682 Datasheet
Silicon Planar Diodes
Features
D
Low differential forward resistance
D
Low diode capacitance
D
High reverse impedance
BA682.BA683
Vishay Telefunken
Applications
Band switching in VHF–tuners
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
35 V
100 mA
150
–55...+150
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20V I
Diode capacitance f=100MHz, VR=1V C
f=100MHz, VR=3V BA682 C
f=100MHz, VR=3V BA683 C
Differential forward f=200MHz, IF=3mA BA682 r
resistance
f=200MHz, IF=3mA BA683 r
f=200MHz, IF=10mA BA682 r
f=200MHz, IF=10mA BA683 r
F
R
D
D
D
f
f
f
f
°
C
°
C
1 V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7
1.2
0.5
0.9
W
W
W
W
Document Number 85530
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
BA682.BA683
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
100
W
10
1
f
r – Differential Forward Resistance ( )
0.1
0.1 1 10
94 9074
IF – Forward Current ( mA )
BA 683
f=200 MHz
T
=25°C
j
Figure 1. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
BA 682
100
3.0
BA 683
f=100 MHz
T
=25°C
j
BA 682
100
2.5
2.0
1.5
1.0
D
C – Diode Capacitance ( pF )
0.5
0
0.1 1 10
94 9075
VR – Reverse Voltage ( V )
Figure 2. Diode Capacitance vs. Reverse Voltage
96 12070
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85530
Rev. 2, 01-Apr-992 (3)
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