Silicon PIN Diodes
Features
D
Wide frequency range 10 MHz to 1 GHz
Applications
BA479G.BA479S
Vishay Telefunken
Current controlled HF resistance in adjustable
attenuators
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
30 V
50 mA
125
–55...+125
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
350 K/W
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=20mA V
Reverse current VR=30 V I
Diode capacitance f=100MHz, VR=0 C
Differential forward
resistance
Reverse impedance f=100MHz, VR=0 BA479G z
Minority carrier
lifetime
f=100MHz, IF=1.5mA r
BA479S z
IF=10mA, IR=10mA
F
R
D
f
r
r
t
5 k
9 k
4
94 9367
°
C
°
C
1 V
50 nA
0.5 pF
50
W
m
W
W
s
Document Number 85527
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
BA479G.BA479S
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
100
10
T
=25°C
amb
1
Scattering Limit
VF – Forward Voltage ( V )
F
I – Forward Current ( mA )
95 9735
0.1
0.01
0 0.4 0.8 1.2 1.6
Figure 1. Forward Current vs. Forward Voltage
10000
W
1000
100
f>20MHz
T
=25°C
10
j
2.0
20
0
–20
–40
–60
–80
a – Typical Cross Modulation Distortion ( dB )
95 9733
P–Circuitwith10 dBAttenuation
0204060
f2, modulated with 200 kHz, m=100% (MHz)
V
=40dBmV
0
f
=100MHzunmodulated
1
Figure 3. Typ. Cross Modulation Distortion vs.
Frequency f
2
80
f
r – Differential Forward Resistance ( )
1
0.001 0.01 0.1 1
95 9734
IF – Forward Current ( mA )
10
Figure 2. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85527
∅ 1.7 max.
3.9 max.26 min.
26 min.
∅ 0.55 max.
Rev. 2, 01-Apr-992 (3)