Vishay Telefunken BA283, BA282 Datasheet
Silicon Planar Diodes
Features
D
Low differential forward resistance
D
Low diode capacitance
D
High reverse impedance
Applications
Band switching in VHF–tuners
BA282.BA283
Vishay Telefunken
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
F
stg
R
j
35 V
100 mA
150
–55...+150
350 K/W
°
C
°
C
Document Number 85526
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
BA282.BA283
R
F
F
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20 V I
Diode capacitance f=100MHz, VR=1V C
f=100MHz, VR=3V BA282 C
BA283 C
Differential forward f=200MHz, IF=3mA BA282 r
resistance
BA283 r
f=200MHz, IF=10mA BA282 r
BA283 r
Reverse impedance f=100MHz, VR=1V z
Characteristics (Tj = 25_C unless otherwise specified)
F
R
D
D
D
f
f
f
f
r
100 k
1 V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7
1.2
0.5
0.9
W
W
W
W
W
100
W
10
BA 283
1
f
r – Differential Forward Resistance ( )
0.1
0.1 1 10
94 9072
IF – Forward Current ( mA )
f=200 MHz
T
=25°C
j
BA 282
Figure 1. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
100
3.0
2.5
2.0
BA 282
1.5
1.0
D
C – Diode Capacitance ( pF )
94 9073
BA 283
0.5
0
0.1 1 10
VR – Reverse Voltage ( V )
f=100 MHz
T
=25°C
j
100
Figure 2. Diode Capacitance vs. Reverse Voltage
Cathode Identification
∅ 0.55 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85526
3.9 max.26 min.
26 min.
Rev. 2, 01-Apr-992 (3)
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