Vishay Telefunken BA1283, BA1282 Datasheet

Silicon Planar Diodes

Features

D

Saving space

D

Hermetic sealed parts

D

Fits onto SOD 323 footprints

D

Electrical data identical with the devices
BA682.BA683 / BA982.BA983

D

Low differential forward resistance

D

Low diode capacitance

D

High reverse impedance

Applications

Band switching in VHF–tuners

BA1282.BA1283

Vishay Telefunken

96 12315

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient mounted on epoxy–glass hard tissue,

Fig. 1 35mm copper clad, 0.9 mm
area per electrode

2

copper

R

R

F

j

stg

thJA

35 V
100 mA
150

–55...+150

500 K/W

°

C

°

C

Document Number 85525
Rev. 2, 01-Apr-99 1 (4)

www.vishay.de • FaxBack [phone]

BA1282.BA1283

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20V I
Diode capacitance f=100MHz, VR=1V C

f=100MHz, VR=3V BA1282 C
f=100MHz, VR=3V BA1283 C

Differential forward f=200MHz, IF=3mA BA1282 r
resistance

f=200MHz, IF=3mA BA1283 r
f=200MHz, IF=10mA BA1282 r
f=200MHz, IF=10mA BA1283 r

Characteristics (Tj = 25_C unless otherwise specified)

F

R

D
D
D
f
f
f
f

1 V

50 nA

1.5 pF

1.25 pF

1.2 pF

0.7

1.2

0.5

0.9

W
W
W
W

100

W

10

1

f

r – Differential Forward Resistance ( )

0.1

0.1 1 10

94 9076

IF – Forward Current ( mA )

BA 1283

f=200 MHz

T

=25°C

j

BA1282

Figure 1. Differential Forward Resistance vs.

Forward Current

100

3.0

2.5

2.0

1.5

1.0

D

C – Diode Capacitance ( pF )

94 9077

BA1283

0.5

0

0.1 1 10
VR – Reverse Voltage ( V )

f=100 MHz

T

=25°C

j

BA1282

100

Figure 2. Diode Capacitance vs. Reverse Voltage

www.vishay.de • FaxBack [phone] Document Number 85525

Rev. 2, 01-Apr-992 (4)