Vishay Telefunken 4N37, 4N36, 4N35 Datasheet
4N35/ 4N36/ 4N37
Optocoupler with Phototransistor Output
Description
The 4N35/ 4N36/ 4N37 consist of a phototransistor
optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Vishay Telefunken
Applications
Galvanically separated circuits for general purposes
Features
D
Isolation test voltage (RMS) 3.75 kV
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
Low coupling capacity of typical 0.3 pF
D
Current Transfer Ratio (CTR) > 100%
D
Low temperature coefficient of CTR
Order Instruction
Ordering Code CTR Ranking Remarks
4N35 > 100%
4N36 > 100%
4N37 > 100%
95 10532
C
B
65
A (+) C (–) n.c.
2
E
4
31
95 10805
Rev. A3, 11–Jan–99 101
4N35/ 4N36/ 4N37
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CBO
CEO
ECO
C
CM
V
6 V
60 mA
3 A
100 mW
j
125
°
C
70 V
30 V
7 V
50 mA
100 mA
150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1min VIO
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
≤ 25°C P
amb
tot
amb
stg
sd
1)
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A3, 11–Jan–99102
4N35/ 4N36/ 4N37
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 10 mA V
Forward voltage IF = 10 mA,
= 100°C
T
amb
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA V
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current IF = 0, E = 0, VCE = 10 V I
IF = 0, E = 0, VCE = 30 V,
= 100°C
T
amb
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Isolation test voltage
(RMS)
Isolation resistance VIO = 1 kV,
Collector emitter
saturation voltage
Cut-off frequency IF = 10 mA, VCE = 5 V,
Coupling capacitance f = 1 MHz C
1)
Related to standard climate 23/50 DIN 50014
f = 50 Hz, t = 2 s V
40% relative humidity
IF = 10 mA, IC = 0.5 mA V
R
L
= 100
W
R
F
V
F
CBO
CEO
ECO
CEO
I
CEO
IO
IO
CEsat
f
c
1.2 1.5 V
1.4 V
j
50 pF
70 V
30 V
7 V
5 50 nA
500
1)
1)
3.75 kV
12
10
m
A
W
0.3 V
110 kHz
k
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
Rev. A3, 11–Jan–99 103
VCE = 10 V, IF = 10 mA 4N35, 4N36,
4N37
VCE = 10 V, IF = 10 mA,
= 100°C
T
amb
4N35, 4N36,
4N37
CTR 1
CTR 0.4
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