Vishay Telefunken 4N35V, 4N35GV, 4N25V, 4N25GV Datasheet
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The 4N25(G)V/ 4N35(G)V series consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
14827
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
RMS
)
Order Instruction
C
B
65
A (+) C (–) n.c.
2
E
4
31
95 10805
Ordering Code CTR Ranking Remarks
4N25V/ 4N25GV
4N35V/ 4N35GV
1)
G = Leadform 10.16 mm; G is not market on the body
1)
1)
>20%
>100%
Rev. A4, 11–Jan–9986
Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
= 6 kV peak
V
IOTM
D
Isolation test voltage
(partial discharge test voltage) V
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
RMS
= 1.6 kV
pd
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
D
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
D
Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
Coupling System A
RMS
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
≤ 25°C P
amb
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CEO
CEO
C
CM
V
IO
tot
amb
stg
sd
5 V
60 mA
3 A
100 mW
j
125 °C
32 V
7 V
50 mA
100 mA
150 mW
j
125 °C
3.75 kV
250 mW
–55 to +100 °C
–55 to +125 °C
260 °C
Rev. A4, 11–Jan–99 87
4N25(G)V/ 4N35(G)V Series
C F
CE F
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA
= 100°C
T
amb
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off
current
VCE = 10 V, IF = 0,
= 100°C
T
amb
VCE = 30 V, IF = 0,
= 100°C
T
amb
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 50 mA, IC = 2 mA V
R
L
= 100
W
V
CEO
ECO
I
CEO
I
CEO
CEsat
f
c
F
j
1.2 1.4 V
50 pF
32 V
7 V
50 nA
500
m
A
0.3 V
110 kHz
k
1 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 10 V, IF = 10 mA 4N25(G)V CTR 0.20 1
4N35(G)V CTR 1.00 1.5
VCE = 10 V, IF = 10 mA,
= 100°C
T
amb
4N35(G)V CTR 0.40
Rev. A4, 11–Jan–9988
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