Vishay Telefunken 4N27, 4N26, 4N28, 4N25 Datasheet
4N25/ 4N26/ 4N27/ 4N28
Optocoupler with Phototransistor Output
Description
The 4N25/ 4N26/ 4N27/ 4N28 consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual-inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
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Applications
Galvanically separated circuits for general purposes
Features
D
Isolation test voltage (RMS) 3.75 kV
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
Low coupling capacity of typical 1 pF
D
Current Transfer Ratio (CTR) of typical 100%
D
Low temperature coefficient of CTR
Order Instruction
Ordering Code CTR Ranking Remarks
4N25/ 4N26 >20%
4N27/ 4N28 >10%
95 10532
C
B
65
A (+) C (–) n.c.
2
E
4
31
95 10805
Rev. A4, 11–Jan–99 79
4N25/ 4N26/ 4N27/ 4N28
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Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CBO
CEO
ECO
C
CM
V
5 V
60 mA
3 A
100 mW
j
125
°
C
70 V
30 V
7 V
50 mA
100 mA
150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) VIO
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
≤ 25°C P
amb
tot
amb
stg
sd
1)
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A4, 11–Jan–9980
4N25/ 4N26/ 4N27/ 4N28
C F
CE F
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Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA V
Collector emitter voltage IE = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCB = 10 V I
Collector dark current VCE = 10 V I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Isolation test voltage
(RMS)
Isolation resistance VIO = 1 kV,
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
1)
Related to standard climate 23/50 DIN 50014
f = 50 Hz, t = 2 s V
40% relative humidity
IF = 50 mA, IC = 2 mA V
R
L
= 100
W
R
F
j
CBO
CEO
ECO
CBO
CEO
1)
IO
1)
IO
CEsat
f
c
k
1.25 1.5 V
50 pF
70 V
30 V
7 V
0.1 20 nA
3.5 50 nA
3.75 kV
12
10
W
0.5 V
110 kHz
1 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
Rev. A4, 11–Jan–99 81
VCE = 10 V, IF = 10 mA 4N25, 4N26 CTR 0.2 1
4N27, 4N28 CTR 0.1 1
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