Silicon Z–Diodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Low reverse current level
D
VZ–tolerance ± 5%
1N957B...1N963B
Vishay Telefunken
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation TLx75°
Z–current I
Junction temperature T
Storage temperature range T
C P
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=9.5mm (3/8”), TL=constant R
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=200mA V
F
Z
stg
V
j
94 9367
500 mW
PV/V
Z
200
–65...+200
300 K/W
1.1 V
mA
°
C
°
C
Rev . A3, 13-Nov-98 1 (3)
1N957B...1N963B
Vishay Telefunken
Type V
1)
Znom
V mA
IZT for r
zjT
W W
r
zjk
at I
ZK
mA
IR at V
R
m
A max V %/K
1N957B 6.8 20 < 4.5 < 700 1.0 150 5.2 < –0.045
1N958B 7.5 20 < 5.5 < 700 0.5 75 5.7 < +0.050
1N959B 8.2 20 < 6.5 < 700 0.5 50 6.2 < +0.058
1N960B 9.1 20 < 7.5 < 700 0.5 25 6.9 < +0.062
1N961B 10 20 < 8.5 < 700 0.25 10 7.6 < +0.065
1N962B 11 20 < 9.5 < 700 0.25 5 8.4 < +0.068
1N963B 12 20 < 11.5 < 700 0.25 5 9.1 < +0.075
1.)Based on dc measurement at thermal equilibrium; lead length = 9.5mm (3/8”);
thermal resistance of heat sink = 30 K/W.
Dimensions in mm
Cathode Identification
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
TK
VZ
∅ 0.55 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
3.9 max.26 min.
26 min.
Rev . A3, 13-Nov-982 (3)