Fast Switching Diodes
Features
D
Fast switching speed
D
High reliability
D
High conductance
D
For general purpose switching applications
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Non repetitive peak reverse voltage V
Repetitive peak reverse voltage V
Working peak reverse voltage V
DC blocking voltage V
RMS Reverse voltage V
Forward current I
Average rectified current half wave rectification
with resistive load and
f>50 MHz,
Non repetitive peak forward surge current t=1s I
t=1ms I
Power dissipation l=4mm, TL=25°C P
Operating and storage temperature range Tj, T
R(RMS)
1N914
Vishay Telefunken
94 9367
RM
RRM
RWM
R
F
I
FAV
FSM
FSM
d
stg
100 V
75 V
75 V
75 V
53 V
300 mA
200 mA
1 A
4 A
500 mW
–65...+175
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
Document Number 85622
Rev. 1, 26-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
thJA
300 K/W
1 (3)
1N914
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward voltage IF=10mA V
Breakdown Voltage IR=100mA V
Peak reverse current VR=75V I
VR=20V, Tj=150 °C I
VR=20V I
Diode capacitance VR=0, f=1MHz C
Reverse recovery time IF=10mA to IR=1mA, VR=6V, RL=100
W
Characteristics (Tj = 25_C unless otherwise specified)
F
R
R
R
R
D
t
rr
1 V
100 V
5.0
50
m
m
25 nA
4 pF
4 ns
A
A
1000
1 N 4448
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
Tj=25°C
94 9171
0.1
0 0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
Figure 1. Forward Current vs. Forward Voltage
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
2.0
1000
Tj=25°C
100
Scattering Limit
10
R
I – Reverse Current ( nA )
1
110
94 9098
VR – Reverse Voltage ( V )
Figure 2. Reverse Current vs. Reverse Voltage
Cathode Identification
100
∅ 0.55 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85622
2 (3) Rev. 1, 26-Apr-99
3.9 max.26 min.
26 min.