Vishay Telefunken 1N4448, 1N4148 Datasheet
Silicon Epitaxial Planar Diodes
Features
D
Electrically equivalent diodes: 1N4148 – 1N914
1N4448 – 1N914B
Applications
Extreme fast switches
1N4148.1N4448
Vishay Telefunken
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation l=4mm, TL=45°C P
l=4mm, TLx25°
Junction temperature T
Storage temperature range T
C P
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
RRM
R
FSM
FRM
F
FAV
V
V
j
stg
100 V
75 V
2 A
500 mA
300 mA
150 mA
440 mW
500 mW
200
–65...+200
350 K/W
°
C
°
C
Document Number 85521
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
1N4148.1N4448
g
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=5mA 1N4448 V
IF=10mA 1N4148 V
IF=100mA 1N4448 V
Reverse current VR=20 V I
VR=20 V, Tj=150 °C I
VR=75 V I
Breakdown voltage IR=100mA, tp/T=0.01,
tp=0.3ms
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Rectification efficiency VHF=2V, f=100MHz
Reverse recovery time IF=IR=10mA, iR=1mA t
IF=10mA, VR=6V,
iR=0.1xIR, RL=100
W
V
F
F
F
R
R
R
(BR)
D
h
r
rr
t
rr
0.62 0.72 V
1 V
1 V
25 nA
50
m
5
m
100 V
4 pF
45 %
8 ns
4 ns
A
A
Characteristics (Tj = 25_C unless otherwise specified)
1.2
1.0
0.8
0.6
0.4
F
V – Forward Voltage ( V )
0.2
0
–300 306090
94 9169
Figure 1. Forward Voltage vs. Junction Temperature
Tj – Junction Temperature ( °C )
IF=100mA
10mA
1mA
0.1mA
120
1000
1 N 4148
100
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9170
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Scattering Limit
Tj=25°C
2.0
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85521
Rev. 2, 01-Apr-992 (4)
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