Vishay Telefunken 1N4151 Datasheet

Silicon Epitaxial Planar Diode

Applications

Extreme fast switches

1N4151

Vishay Telefunken

94 9367

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation l=4mm, TL=45°C P

l=4mm, TLx25°
Junction temperature T
Storage temperature range T

C P

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient l=4mm, TL=constant R

thJA

RRM

R
FSM
FRM

F

FAV

V

V

j

stg

75 V
50 V

2 A
500 mA
300 mA
150 mA
440 mW
500 mW
175

–65...+175

350 K/W

°

C

°

C

Document Number 85523
Rev. 2, 01-Apr-99 1 (4)

www.vishay.de • FaxBack [phone]

1N4151

y

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=50mA V
Reverse current VR=50V I

VR=50V, Tj=150°C I
Breakdown voltage IR=5mA V
Diode capacity VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10mA, iR=1mA t

IF=10mA, VR=6V,

i

=0.1xIR, RL=100

R

W

Characteristics (Tj = 25_C unless otherwise specified)

F
R
R

(BR)

D
rr

t

rr

0.88 1 V
14 50 nA

50

m

75 V

2 pF
4 ns
2 ns

A

100

Scattering Limit

10

m

1

0.1

R

I – Reverse Current ( A )

VR=50V

200

94 9151

0.01
0 40 80 120 160

Tj – Junction Temperature ( °C )

Figure 1. Reverse Current vs. Junction Temperature

1000

100

10

Tj=100°C

3.0

2.5

2.0

1.5

1.0

D

C – Diode Capacitance ( pF )

0.5

0

0.1 1 10

94 9153

VR – Reverse Voltage ( V )

f=1 MHz

T

=25°C

j

100

Figure 3. Diode Capacitance vs. Reverse Voltage

Tj=25°C

2.0

VF – Forward Voltage ( V )

F

I – Forward Current ( mA )

94 9152

1

0.1
0 0.4 0.8 1.2 1.6

Figure 2. Forward Current vs. Forward Voltage

www.vishay.de • FaxBack [phone] Document Number 85523

Rev. 2, 01-Apr-992 (4)