Vishay Telefunken 1N4150 Datasheet

Silicon Epitaxial Planar Diode
Features
D
D
High forward current capability
Applications
1N4150
Vishay Telefunken
High speed switch and general purpose use in com­puter and industrial applications
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage V Reverse voltage V Peak forward surge current tp=1ms I Forward current I Average forward current VR=0 I Power dissipation l=4mm, TL=45°C P
l=4mm, TLx25° Junction temperature T Storage temperature range T
C P
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
RRM
R
FSM
F
FAV
V V
stg
j
94 9367
50 V 50 V
4 A 600 mA 300 mA 440 mW 500 mW 175
–65...+175
350 K/W
°
C
°
C
Document Number 85522 Rev. 2, 01-Apr-99 1 (3)
www.vishay.de FaxBack +1-408-970-5600
1N4150
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1mA V
IF=10mA V IF=50mA V IF=100mA V IF=200mA V
Reverse current VR=50V I
VR=50V, Tj=150°C I Diode capacitance VR=0, f=1MHz, VHF=50mV C Reverse recovery time IF=IR=10...100mA,
i
=0.1xIR, RL=100
R
W
Characteristics (Tj = 25_C unless otherwise specified)
F F F F
F R R
D
t
rr
0.54 0.62 V
0.66 0.74 V
0.76 0.86 V
0.82 0.92 V
0.87 1.0 V 100 nA 100
m
2.5 pF 4 ns
A
100
Scattering Limit
VR=50V
0 40 80 120 160
Tj – Junction Temperature ( °C )
m
R
I – Reverse Current ( A )
94 9100
10
1
0.1
0.01
Figure 1. Reverse Current vs. Junction Temperature
Dimensions in mm
technical drawings according to DIN specifications
94 9366
1.7 max.
200
1000
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
Tj=25°C
94 9162
0.1 0 0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Cathode Identification
2.0
0.55 max.
Standard Glass Case
54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3g
www.vishay.de FaxBack +1-408-970-5600 Document Number 85522
3.9 max.26 min.
26 min.
Rev. 2, 01-Apr-992 (3)
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