Silicon Epitaxial Planar Diode
Features
D
Low forward voltage drop
D
High forward current capability
Applications
1N4150
Vishay Telefunken
High speed switch and general purpose use in computer and industrial applications
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Forward current I
Average forward current VR=0 I
Power dissipation l=4mm, TL=45°C P
l=4mm, TLx25°
Junction temperature T
Storage temperature range T
C P
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
thJA
RRM
R
FSM
F
FAV
V
V
stg
j
94 9367
50 V
50 V
4 A
600 mA
300 mA
440 mW
500 mW
175
–65...+175
350 K/W
°
C
°
C
Document Number 85522
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
1N4150
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1mA V
IF=10mA V
IF=50mA V
IF=100mA V
IF=200mA V
Reverse current VR=50V I
VR=50V, Tj=150°C I
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10...100mA,
i
=0.1xIR, RL=100
R
W
Characteristics (Tj = 25_C unless otherwise specified)
F
F
F
F
F
R
R
D
t
rr
0.54 0.62 V
0.66 0.74 V
0.76 0.86 V
0.82 0.92 V
0.87 1.0 V
100 nA
100
m
2.5 pF
4 ns
A
100
Scattering Limit
VR=50V
0 40 80 120 160
Tj – Junction Temperature ( °C )
m
R
I – Reverse Current ( A )
94 9100
10
1
0.1
0.01
Figure 1. Reverse Current vs. Junction Temperature
Dimensions in mm
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
200
1000
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
Tj=25°C
94 9162
0.1
0 0.4 0.8 1.2 1.6
VF – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Cathode Identification
2.0
∅ 0.55 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3g
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85522
3.9 max.26 min.
26 min.
Rev. 2, 01-Apr-992 (3)