Datasheet VS-ST650C..L Series DataSheet (Vishay)

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TO-200AC (B-PUK)

PRODUCT SUMMARY

Package TO-200AC (B-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

2000 V, 2200 V, 2400 V

VS-ST650C..L Series

Phase Control Thyristors

(Hockey PUK Version), 790 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor control

• Controlled DC power supplies

• AC controllers

790 A

2.07 V

100 mA

-40 °C to 125 °C

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 10 100

60 Hz 10 700

50 Hz 510

60 Hz 475

Typical 200 μs

790 A

55 °C

1557 A

25 °C

2000 to 2400 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST650C..L

V

VOLTAGE

CODE

20 2000 2100

24 2400 2500

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

NON-REPETITIVE PEAK VOLTAGE

V

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

8022 2200 2300

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope
resistance

High level value of on-state
slope resistance

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

H

L

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1857

t = 10 ms

t = 8.3 ms 10 700

t = 10 ms

t = 8.3 ms 9150

t = 10 ms

t = 8.3 ms 475

t = 10 ms

t = 8.3 ms 347

(16.7 % x π x I

(I > π x I

(16.7 % x π x I

(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

), TJ = TJ maximum 1.13

T(AV)

), TJ = TJ maximum 0.35

T(AV)

T(AV)

T(AV)

RRM

< I < π x I

< I < π x I

T(AV)

T(AV)

Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

790 (324) A

55 (85) °C

10 100

8600

= TJ maximum

J

), TJ = TJ maximum 1.04

), TJ = TJ maximum 0.61

510

370

600

1000

kA

mΩ

mA

A

2

V

s

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Maximum turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs
V

= 50, dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs

R

≤ 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.0

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt T

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

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= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

2

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DRM

applied 80 mA

500 V/μs

Document Number: 93738

μs

VS-ST650C..L Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GD

GD

GT

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = -40 °C

= 25 °C 100 200

J

= 125 °C 50 -

T

J

TJ = -40 °C 2.5 -

= 25 °C 1.8 3.0

J

T

= 125 °C 1.1 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V
cathode applied

Vishay Semiconductors

DRM

anode to

VALUES

typ. max.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

Single Side Double Side Single Side Double Side

TEST CONDITIONS UNITS

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

T

J

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

-40 to 125

-40 to 150

14 700

(1500)

= TJ maximum K/W

°C

K/W

N

(kg)

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20

30

40

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600 700 800

30°

60°

90°

120°

180°

Av era g e O n- sta te C u rre nt (A )

Conduction Angle

Maximum Allowable Heatsink Temperature (°C)

ST 6 50C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.031 K /W

thJ-h s

20

30

40

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600 700 800

30°

60°

90°

120°

180°

Av era g e O n- sta te C u rre nt (A )

Conduction Angle

Maximum Allowable Heatsink Temperature (°C)

ST 6 50C ..L Se ries
(Double Side Cooled)
R (D C ) = 0.031 K /W

thJ-h s

0

200

400

600

800

1000

1200

1400

1600

1800

2000

2200

2400

0 200 400 600 800 1000 1200 1400

DC
180°
120°

90°

60°

30°

RMS Lim it

Conduction Period

M axim um Average O n-state Power Loss (W)

A ve ra g e O n -st a te C urre nt (A )

ST650C ..L Series
T = 125°C

J

VS-ST650C..L Series

Vishay Semiconductors

130

120

110

100

90

80

70

60

0 50 100 150 200 250 300 350 400

Maxim um Allow able Heatsink Temperature (°C)

Av erag e O n-s ta te C urren t (A )

ST 6 50C ..L Se ries
(Single Side C ooled)
R (D C) = 0 .073 K/W

th J-hs

Conduction Angle

30°

60°

90°

120°

180°

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000 1200 1400

Maxim um Allowable Heatsink Tem pera ture (°C )

ST650C..L Series
(D ouble S ide C ooled )
R (DC ) = 0.031 K/W

th J-hs

Cond uc tion Period

90°

60°

30°

Averag e O n-state C urrent (A)

120°

180°

DC

Fig. 4 - Current Ratings Characteristics

2000

1750

1500

1250

1000

750

500

250

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RMS Lim it

Conduction Angle

ST650C..L Series
T = 125°C

J

0

0 100 200 300 400 500 600 700 800

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

Fig. 3 - Current Ratings Characteristics

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Fig. 5 - On-State Power Loss Characteristics

Fig. 6 - On-State Power Loss Characteristics

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4000

5000

6000

7000

8000

9000

10000

001011

Num ber Of Equ al Amp litud e H alf Cycle Current Pulses (N)

Peak Half Sine Wave On-state Current (A)

A t Any Rat e d Lo a d C ond ition A n d W ith

R a t e d V A p p l ie d Fo l lo w in g Su r g e .

RRM

Initia l T = 12 5°C

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

J

ST650 C..L S e ries

100

1000

10000

0.5 1 1.5 2 2 .5 3

Instantaneous On -state Current (A)

Insta n tan eous O n -stat e V oltage (V)

ST650C..L Series

T = 25°C

J

T = 125°C

J

0.001

0.01

0.1

0111.010.0100.0

Square Wave Pulse Duration (s)

thJ-h s

Stead y St a te V a lue

R = 0.073 K/W

(Sin gle Side Coo led)

R = 0.031 K/W

(Do uble Side Coo led)

(DC O p era tion)

thJ-h s

thJ-h s

Tra nsien t Th erm a l Im pe d ance Z (K /W )

ST6 50C ..L Se ries

VS-ST650C..L Series

Vishay Semiconductors

12000

M a x im u m N on R e p etitive S u rg e C urre nt

11000

10000

9000

8000

7000

6000

5000

Pe ak Ha lf Sine W ave O n-state C urrent (A)

4000

Ve rsu s P u lse Tra in D u ra tion . C on trol

O f C ondu ctio n M ay N ot Be M aintained.

N o Vo l t a g e R e a p p l ie d
Ra te d V Re applied

ST650C..L Series

Pulse Train Duration (s)

In i t ia l T = 1 2 5 ° C

J

RRM

11.010.0

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 9 - On-State Voltage Drop Characteristics

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

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Fig. 10 - Thermal Impedance Z

5

Characteristics

thJ-hs

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0.1

1

10

100

0.001 0.01 0.1 1 10 100

VG D

IG D

(b)

(a)

Tj = 25 ° C

Tj=125 °C

Tj=-40 °C

(2) (3)

Insta n tan eo us G ate C u rren t (A)

Inst a nt ane o us G a te V o lta g e (V )

a) Recommended load line for

b ) R e c o m m e n d e d lo a d li n e f o r
<=30% rated di/dt : 10V, 10ohms

Frequency Limited by PG(AV)

rated di/dt : 20V, 10ohm s; tr<=1 µs

tr<=1 µs

(1)

(1) PG M = 10W , tp = 4m s
(2) PG M = 20W , tp = 2m s
(3) PG M = 40W , tp = 1m s
(4) PG M = 60W , tp = 0.66ms

Rectangular gate pulse

ST6 50C ..L Se rie s

(4)

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

9 - Critical dV/dt:

5

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

6

- L = PUK case TO-200AC (B-PUK)

7

8

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

Device code

51 32 4 6 7 8 9

STVS- 65 0 C 24 L 1 -

1

- Vishay Semiconductors product

ORDERING INFORMATION TABLE

VS-ST650C..L Series

Vishay Semiconductors

Fig. 11 - Gate Characteristics

Dimensions www.vishay.com/doc?95076

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LINKS TO RELATED DOCUMENTS

6

Document Number: 93738

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DIMENSIONS in millimeters (inches)

Pin receptacle
AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

4.7 (0.18)

27 (1.06) MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

36.5 (1.44)

Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

20° ± 5°

Outline Dimensions

Vishay Semiconductors

TO-200AC (B-PUK)

Document Number: 95076 For technical questions, contact: [e-mail]
Revision: 01-Aug-07 1

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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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