Vishay VS-ST650C..L Series Data Sheet
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TO-200AC (B-PUK)
PRODUCT SUMMARY
Package TO-200AC (B-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
2000 V, 2200 V, 2400 V
VS-ST650C..L Series
Phase Control Thyristors
(Hockey PUK Version), 790 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor control
• Controlled DC power supplies
• AC controllers
790 A
2.07 V
100 mA
-40 °C to 125 °C
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 10 100
60 Hz 10 700
50 Hz 510
60 Hz 475
Typical 200 μs
790 A
55 °C
1557 A
25 °C
2000 to 2400 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST650C..L
V
VOLTAGE
CODE
20 2000 2100
24 2400 2500
DRM/VRRM
PEAK AND OFF-STATE VOLTAGE
, MAXIMUM REPETITIVE
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
8022 2200 2300
Revision: 15-Apr-14
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Document Number: 93738
VS-ST650C..L Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope
resistance
High level value of on-state
slope resistance
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
r
t1
r
t2
TM
H
L
180° conduction, half sine wave
Double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 1857
t = 10 ms
t = 8.3 ms 10 700
t = 10 ms
t = 8.3 ms 9150
t = 10 ms
t = 8.3 ms 475
t = 10 ms
t = 8.3 ms 347
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
reapplied
100 % V
reapplied
), TJ = TJ maximum 1.13
T(AV)
), TJ = TJ maximum 0.35
T(AV)
T(AV)
T(AV)
RRM
< I < π x I
< I < π x I
T(AV)
T(AV)
Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
790 (324) A
55 (85) °C
10 100
8600
= TJ maximum
J
), TJ = TJ maximum 1.04
), TJ = TJ maximum 0.61
510
370
600
1000
kA
mΩ
mA
A
2
V
s
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Maximum turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs
V
= 50, dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs
R
≤ 1 μs
r
, TJ = 25 °C
DRM
1000 A/μs
1.0
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt T
Maximum peak reverse and off-state leakage
current
I
RRM
I
DRM
,
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
2
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DRM
applied 80 mA
500 V/μs
Document Number: 93738
μs
VS-ST650C..L Series
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TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GT
GD
GD
GT
TJ = TJ maximum, tp ≤ 5 ms 10.0
TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
TJ = TJ maximum, tp ≤ 5 ms
GM
GM
TJ = -40 °C
= 25 °C 100 200
J
= 125 °C 50 -
T
J
TJ = -40 °C 2.5 -
= 25 °C 1.8 3.0
J
T
= 125 °C 1.1 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
DRM
anode to
VALUES
typ. max.
3.0 A
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.073
DC operation double side cooled 0.031
DC operation single side cooled 0.011
DC operation double side cooled 0.006
Mounting force, ± 10 %
Approximate weight 255 g
Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)
ΔR
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
Single Side Double Side Single Side Double Side
TEST CONDITIONS UNITS
180° 0.009 0.009 0.006 0.006
120° 0.011 0.011 0.011 0.011
90° 0.014 0.014 0.015 0.015
T
J
60° 0.020 0.020 0.021 0.021
30° 0.036 0.036 0.036 0.036
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJ-hs
-40 to 125
-40 to 150
14 700
(1500)
= TJ maximum K/W
°C
K/W
N
(kg)
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
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Document Number: 93738
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