Vishay VS-ST650C..L Series Data Sheet

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TO-200AC (B-PUK)

PRODUCT SUMMARY

Package TO-200AC (B-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

2000 V, 2200 V, 2400 V

VS-ST650C..L Series

Phase Control Thyristors

(Hockey PUK Version), 790 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AC (B-PUK)

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor control

• Controlled DC power supplies

• AC controllers

790 A

2.07 V

100 mA

-40 °C to 125 °C

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 10 100

60 Hz 10 700

50 Hz 510

60 Hz 475

Typical 200 μs

790 A

55 °C

1557 A

25 °C

2000 to 2400 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST650C..L

V

VOLTAGE

CODE

20 2000 2100

24 2400 2500

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

NON-REPETITIVE PEAK VOLTAGE

V

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

8022 2200 2300

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VS-ST650C..L Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 5100 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope
resistance

High level value of on-state
slope resistance

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

r

t1

r

t2

TM

H

L

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1857

t = 10 ms

t = 8.3 ms 10 700

t = 10 ms

t = 8.3 ms 9150

t = 10 ms

t = 8.3 ms 475

t = 10 ms

t = 8.3 ms 347

(16.7 % x π x I

(I > π x I

(16.7 % x π x I

(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

reapplied

100 % V
reapplied

), TJ = TJ maximum 1.13

T(AV)

), TJ = TJ maximum 0.35

T(AV)

T(AV)

T(AV)

RRM

< I < π x I

< I < π x I

T(AV)

T(AV)

Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse 2.07 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

790 (324) A

55 (85) °C

10 100

8600

= TJ maximum

J

), TJ = TJ maximum 1.04

), TJ = TJ maximum 0.61

510

370

600

1000

kA

mΩ

mA

A

2

V

s

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Maximum turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs
V

= 50, dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs

R

≤ 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.0

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt T

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

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= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

2

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DRM

applied 80 mA

500 V/μs

Document Number: 93738

μs

VS-ST650C..L Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GD

GD

GT

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = -40 °C

= 25 °C 100 200

J

= 125 °C 50 -

T

J

TJ = -40 °C 2.5 -

= 25 °C 1.8 3.0

J

T

= 125 °C 1.1 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V
cathode applied

Vishay Semiconductors

DRM

anode to

VALUES

typ. max.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.073

DC operation double side cooled 0.031

DC operation single side cooled 0.011

DC operation double side cooled 0.006

Mounting force, ± 10 %

Approximate weight 255 g

Case style See dimensions - link at the end of datasheet TO-200AC (B-PUK)

ΔR

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

Single Side Double Side Single Side Double Side

TEST CONDITIONS UNITS

180° 0.009 0.009 0.006 0.006

120° 0.011 0.011 0.011 0.011

90° 0.014 0.014 0.015 0.015

T

J

60° 0.020 0.020 0.021 0.021

30° 0.036 0.036 0.036 0.036

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

-40 to 125

-40 to 150

14 700

(1500)

= TJ maximum K/W

°C

K/W

N

(kg)

Revision: 15-Apr-14

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 93738