Vishay VS-ST173S Series Data Sheet

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TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 4680 A

TSM

I

at 60 Hz 4900 A

TSM

I

GT

T

J

Package TO-209AB (TO-93)

Diode variation Single SCR

Inverter Grade Thyristors

(Stud Version), 175 A

FEATURES

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance

175 A

1000 V, 1200 V

2.07 V

200 mA

-40 °C to 125 °C

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters




VS-ST173S Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

Range 15 to 25 μs

q

T

J

T

C

50 Hz 4680

60 Hz 4900

50 Hz 110

60 Hz 100

175 A

85 °C

275

1000 to 1200 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST173S

V

VOLTAGE

CODE

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

V

V

, MAXIMUM

RSM

V

I

DRM/IRRM

T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM AT

mA

40

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VS-ST173S Series

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CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 500 320 790 550 4510 3310

400 Hz 450 290 810 540 1970 1350

1000 Hz 330 190 760 490 1050 680

2500 Hz 170 80 510 300 480 280

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

V

DRM

Rise of on-state current dI/dt 50 - - A/μs

Case temperature 608560856085°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope
resistance

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

r

t2

H

L

180° conduction, half sine wave

DC at 75 °C case temperature 275

t = 10 ms

t = 8.3 ms 4900

t = 10 ms

t = 8.3 ms 4120

t = 10 ms

t = 8.3 ms 100

t = 10 ms

t = 8.3 ms 71

No voltage
reapplied

100 % V
reapplied

RRM 

No voltage
reapplied

100 % V
reapplied

RRM 

Sinusoidal half wave,
initial T

ITM = 600 A, TJ = TJ maximum, 
t

= 10 ms sine wave pulse

p

(16.7 % x  x I
(I >  x I

T(AV)

(16.7 % x  x I

(I >  x I

T(AV)

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 1.58

< I <  x I

T(AV)

T(AV)

), TJ = TJ maximum 0.82

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000

Vishay Semiconductors

I

TM

100 µs

= TJ maximum

J

), TJ = TJ maximum 1.55

), TJ = TJ maximum 0.87

V

DRM

I

TM

175 A

85 °C

4680

3940

110

77

2.07

kA

m

mA

A

V

A

2

s

V

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

minimum

Maximum turn-off time

maximum 25

Revision: 11-Mar-14

dI/dt

d

t

q

= TJ maximum, V

T

J

I

= 2 x dI/dt

TM

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5  source

TJ = TJ maximum, 
I

= 300 A, commutating dI/dt = 20 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt: See table in device code

R

2

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= Rated V

DRM

DRM



DRM

, ITM = 50 A DC, tp = 1 μs

1000 A/μs

1.1

15

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μs

VS-ST173S Series

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BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum, linear to 80 % V

Maximum critical rate of rise of off-state voltage dV/dt

I

Maximum peak reverse and off-state leakage current

RRM

I

DRM

J

higher value available on request

,

TJ = TJ maximum, rated V

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 

TJ = TJ maximum, rated V

Vishay Semiconductors

, 

DRM/VRRM

applied

DRM

DRM

applied 40 mA

500 V/μs

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

R

CONDUCTION ANGLE

CONDUCTION

thJC

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.016 0.012

120° 0.019 0.020

90° 0.025 0.027

= TJ maximum K/W

T

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

-40 to 125

-40 to 150

31

(275)

24.5

(210)

(lbf · in)

°C

K/W

N · m

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0

200 240 280

Average On-State Current (A)

40 120

80 160

Maximum Allowable

Case Temperature (°C)

70

80

90

100

110

120

130

ST173S Series
R

thJC

(DC) = 0.105 K/W

Ø

Conduction period

30° 60°

90°

120°

180°

DC

Average On-State Current (A)

Maximum Average

On-State Power Loss (W)

0

200 240 280

40 120

80 160

0

100

200

300

400

500

ST173S Series
T

J

= 125 °C

Ø

Conduction period

RMS limit

DC

180°

120°

90°

60°

30°

Maximum Average On-State

Power Loss (W)

0

100

200

300

400

500

0.2 K/W

R

thSA

= 0.8 K/W - ΔR

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

0.1 K/W

0.16 K/W

VS-ST173S Series

Vishay Semiconductors

130

120

110

100

Maximum Allowable

90

Case Temperature (°C)

80

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

ST173S Series

(DC) = 0.105 K/W

R

thJC

Ø

Conduction angle

30 °C

60 °C

90 °C 180 °C

120 °C

0

40 80 120 160

20 60 100 140 180

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

0

20 6040 80

0

180°
120°
90°
60°
30°

100 120 140 160 180

RMS limit

Ø

Conduction angle

ST173S Series

= 125 °C

T

J

Average On-State Current (A)

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

0

25

Maximum Allowable Ambient Temperature (°C)

0.16 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

0.1 K/W

R

thSA

50 10075

= 0.08 K/W - ΔR

Fig. 3 - On-State Power Loss Characteristics

125

Revision: 11-Mar-14

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Fig. 4 - On-State Power Loss Characteristics

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