Vishay VS-ST173C Series Data Sheet
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TO-200AB (A-PUK)
PRODUCT SUMMARY
Package TO-200AB (A-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 4680 A
TSM
I
at 60 Hz 4900 A
TSM
I
GT
T
C/Ths
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
330 A
1000 V, 1200 V
2.07 V
200 mA
55 °C
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
VS-ST173C Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
Range 15 to 30 μs
q
T
J
T
hs
T
hs
50 Hz 4680
60 Hz 4900
50 Hz 110
60 Hz 100
330 A
55 °C
610 A
25 °C
1000 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST173C..C
V
VOLTAGE
CODE
10 1000 1100
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
40
Revision: 16-Dec-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 94366
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180° el
I
TM
CURRENT CARRYING CAPABILITY
VS-ST173C Series
Vishay Semiconductors
I
FREQUENCY UNITS
180° el
TM
100 µs
I
TM
50 Hz 760 660 1200 1030 5570 4920
400 Hz 730 590 1260 1080 2800 2460
1000 Hz 600 490 1200 1030 1620 1390
A
2500 Hz 350 270 850 720 800 680
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
DRM
V
DRM
V
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope
resistance
Maximum holding current I
Typical latching current I
I
T(AV)
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 610
I
TSM
TM
T(TO)1
T(TO)2
t1
r
t2
H
L
t = 10 ms
t = 8.3 ms 4900
t = 10 ms
t = 8.3 ms 4120
t = 10 ms
t = 8.3 ms 100
t = 10 ms
t = 8.3 ms 71
ITM = 600 A, TJ = TJ maximum,
t
= 10 ms sine wave pulse
p
(16.7 % x x I
(I > x I
(16.7 % x x I
(I > x I
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
reapplied
), TJ = TJ maximum 1.61
T(AV)
), TJ = TJ maximum 0.77
T(AV)
T(AV)
T(AV)
RRM
< I < x I
< I < x I
), TJ = TJ maximum 1.55
T(AV)
), TJ = TJ maximum 0.87
T(AV)
330 (120) A
55 (85) °C
4680
3940
110
77
kA
2.07
m
mA
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate
of rise of turned on current
Typical delay time t
minimum
Maximum turn-off time
maximum 30
Revision: 16-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
dI/dt T
d
t
q
= TJ maximum, V
J
TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5 source
= Rated V
DRM
, ITM = 2 x dI/dt 1000 A/μs
DRM
, ITM = 50 A DC, tp = 1 μs
DRM
TJ = TJ maximum,
I
= 300 A, commutating dI/dt = 20 A/μs
TM
V
= 50 V, tp = 500 μs, dV/dt: See table in device code
R
2
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1.1
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Document Number: 94366
μs
VS-ST173C Series
www.vishay.com
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
I
Maximum peak reverse and off-state leakage current
RRM
I
DRM
,
J
higher value available on request
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
Vishay Semiconductors
,
DRM/VRRM
applied
DRM
DRM
applied 40 mA
500 V/μs
60
10
W
10 A
20
5
200 mA
3V
20 mA
0.25 V
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to heatsink R
Maximum thermal resistance, case to heatsink R
J
Stg
thJ-hs
thC-hs
DC operation single side cooled 0.17
DC operation double side cooled 0.08
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 %
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)
R
CONDUCTION
thJ-hs
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
Single Side Double Side Single Side Double Side
TEST CONDITIONS UNITS
180° 0.015 0.016 0.011 0.011
120° 0.018 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
T
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
Note
• The table above shows the increment of thermal resistance R
Revision: 16-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
when devices operate at different conduction angles than DC
thJ-hs
3
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- 40 to 125
- 40 to 150
4900
(500)
= TJ maximum K/W
J
Document Number: 94366
°C
K/W
N
(kg)
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