Vishay VS-ST1280C..K Series Data Sheet

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A-24 (K-PUK)

(Hockey-PUK Version), 2310 A

PRODUCT SUMMARY

Package A-24 (K-PUK)

Diode variation Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

-40 °C to 125 °C

Phase Control Thyristors

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

2310 A

400 V, 600 V

1.44 V

100 mA

VS-ST1280C..K Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 42 500

60 Hz 44 500

50 Hz 9027

60 Hz 8240

Typical 200 μs

2310 A

55 °C

4150 A

25 °C

400 to 600 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST1280C..K

V

VOLTAGE

CODE

04 400 500

06 600 700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

NON-REPETITIVE PEAK VOLTAGE

V

RSM

, MAXIMUM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

100

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VS-ST1280C..K Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 90 270 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 4150

t = 10 ms

t = 8.3 ms 44 500

t = 10 ms

t = 8.3 ms 37 400

t = 10 ms

t = 8.3 ms 8241

t = 10 ms

t = 8.3 ms 5828

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

RRM

No voltage
reapplied

100 % V
reapplied

), TJ = TJ maximum 0.90

T(AV)

), TJ = TJ maximum 0.068

T(AV)

T(AV)

T(AV)

RRM

< I < π x I

< I < π x I

Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

2310 (885) A

55 (85) °C

42 500

35 700

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.83

T(AV)

), TJ = TJ maximum 0.077

T(AV)

9027

6383

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs

R

≤ 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.9
μs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/μs

applied 100 mA

UNIT

S

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VS-ST1280C..K Series

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = -40 °C

= 25 °C 100 200

J

= 125 °C 50 -

T

J

TJ = -40 °C 1.4 -

GT

= 25 °C 1.1 3.0

J

T

= 125 °C 0.9 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V
cathode applied

Vishay Semiconductors

anode to

DRM

VALUES

typ. max.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to
heatsink

Maximum thermal resistance, case to heatsink R

R

thJ-hs

thC-hs

J

Stg

DC operation single side cooled 0.042

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

= TJ maximum K/W

T

J

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

-40 to 125

-40 to 150

24 500

(2500)

°C

K/W

N

(kg)

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Average On-state Current (A)

Maximum Allowable Heatsink Temperature (°C)

30

40

50

60

70

80

90

100

110

120

130

0 500 1000 1500 2000 2500 3000

30˚

60˚

90˚

120˚

180˚

Conduction Angle

ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

0

400

800

1200

1600

2000

2400

2800

3200

3600

0 500 1000 1500 2000 2500 3000

180˚
120˚

90˚
60˚
30˚

RMS Limit

Conduction Angle

ST1280C..K Series
T = 125˚C

J

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

0 1000 2000 3000 4000 5000

DC
180˚
120˚

90˚

60˚

30˚

RMS Limit

Conduction Period

ST1280C..K Series
T = 125˚C

J

VS-ST1280C..K Series

Vishay Semiconductors

130

120

110

ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

100

90

Conduction Angle

80

70

60

50

40

0 400 800 1200 1600

Maximum Allowable Heatsink Temperature (°C)

30˚

60˚

90˚

120˚

180˚

Average On-state current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

ST1280C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

100

90

80

Conduction Period

70

60

50

40

30

20

Maximum Allowable Heatsink Temperature (°C)

30˚

60˚

90˚

120˚

180˚

0 500 1000 1500 2000 2500

Average On-state current (A)

Fig. 2 - Current Ratings Characteristics

DC

130

120

110

ST1280C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90

80

Conduction Period

70

60

30˚

50

40

30

20

0 1000 2000 3000 4000 5000

Maximum Allowable Heatsink Temperature (°C)

60˚

90˚

120˚

180˚

DC

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-State Power Loss Characteristics

Fig. 3 - Current Ratings Characteristics

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Fig. 6 - On-State Power Loss Characteristics

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Pulse Train Duration (s)

Peak Half Sine Wave On-state Current (A)

15000

20000

25000

30000

35000

40000

45000

0.01 0.1 1

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST1280C..K Series

Initial T = 125 ˚C

No Voltage Reapplied

Rated V Reapplied

RRM

J

Square Wave Pulse Duration (s)

Transient Thermal Impedance Z (K/W)

thJ-hs

0.001

0.01

0.1

0.001 0.01 0.1 1 10 100

Steady State Value

R = 0.042 K/W

(Single Side Cooled)

R = 0.021 K/W

(Double Side Cooled)

(DC Operation)

thJ-hs

thJ-hs

ST1280C..K Series

VS-ST1280C..K Series

Vishay Semiconductors

40000

35000

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125˚C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

30000

25000

20000

15000

Peak Half Sine Wave On-state Current (A)

ST1280C..K Series

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

100000

10000

1000

T = 25˚C

J

T = 125˚C

J

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

ST1280C..K Series

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

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(b)

(a)

(1)

- Thyristor

1

- Vishay Semiconductors product

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

9

8

- Critical dV/dt:

5

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

6

- K = PUK case A-24 (K-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

Device code

51 32 4 6 7 8 9

STVS- 128 0 C 06 K 1 -

100

Rectangulargate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for

<=30% rated di/dt : 10V, 10ohms

tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

VG D

ORDERING INFORMATION TABLE

Tj=-40 °C

Tj=25 °

Tj=125 °C

C

IG D

Device: ST1280C..K Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

VS-ST1280C..K Series

Vishay Semiconductors

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms

(2) (3)

Frequency Limited by PG(AV)

Dimensions www.vishay.com/doc?95081

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LINKS TO RELATED DOCUMENTS

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DIMENSIONS in millimeters (inches)

74.5 (2.9) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

4.75 (0.2) NOM.

44 (1.73)

Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

20° ± 5°

Pin receptable
AMP. 60598-1

1 (0.04) MIN.

2 places

47.5 (1.87) DIA. MAX.
2 places

27.5 (1.08) MAX.

67 (2.6) DIA. MAX.

Outline Dimensions

Vishay Semiconductors

A-24 (K-PUK)

Document Number: 95081 For technical questions, contact: [e-mail]
Revision: 02-Aug-07 1

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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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