Vishay VS-ST1280C..K Series Data Sheet
www.vishay.com
A-24 (K-PUK)
(Hockey-PUK Version), 2310 A
PRODUCT SUMMARY
Package A-24 (K-PUK)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
GT
T
J
-40 °C to 125 °C
Phase Control Thyristors
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case A-24 (K-PUK)
• High profile hockey PUK
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
2310 A
400 V, 600 V
1.44 V
100 mA
VS-ST1280C..K Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
hs
T
hs
50 Hz 42 500
60 Hz 44 500
50 Hz 9027
60 Hz 8240
Typical 200 μs
2310 A
55 °C
4150 A
25 °C
400 to 600 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST1280C..K
V
VOLTAGE
CODE
04 400 500
06 600 700
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK VOLTAGE
V
RSM
, MAXIMUM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
A
kA2s
MAXIMUM
mA
100
Revision: 18-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93718
VS-ST1280C..K Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 90 270 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
I
T(AV)
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled 4150
t = 10 ms
t = 8.3 ms 44 500
t = 10 ms
t = 8.3 ms 37 400
t = 10 ms
t = 8.3 ms 8241
t = 10 ms
t = 8.3 ms 5828
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
), TJ = TJ maximum 0.90
T(AV)
), TJ = TJ maximum 0.068
T(AV)
T(AV)
T(AV)
RRM
< I < π x I
< I < π x I
Ipk = 8000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.44 V
TJ = 25 °C, anode supply 12 V resistive load
Vishay Semiconductors
2310 (885) A
55 (85) °C
42 500
35 700
Sinusoidal half wave,
initial T
= TJ maximum
J
), TJ = TJ maximum 0.83
T(AV)
), TJ = TJ maximum 0.077
T(AV)
9027
6383
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
Gate current 1 A, dIg/dt = 1 A/μs
V
= 0.67 % V
d
DRM
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/μs,
V
= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs
R
≤ 1 μs
r
, TJ = 25 °C
DRM
1000 A/μs
1.9
μs
200
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
I
,
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/μs
applied 100 mA
UNIT
S
Revision: 18-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93718
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST1280C..K Series
www.vishay.com
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GM
G(AV)
GM
GT
GD
GD
TJ = TJ maximum, tp ≤ 5 ms 16
TJ = TJ maximum, f = 50 Hz, d% = 50 3
TJ = TJ maximum, tp ≤ 5 ms
GM
GM
TJ = -40 °C
= 25 °C 100 200
J
= 125 °C 50 -
T
J
TJ = -40 °C 1.4 -
GT
= 25 °C 1.1 3.0
J
T
= 125 °C 0.9 -
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
cathode applied
Vishay Semiconductors
anode to
DRM
VALUES
typ. max.
3.0 A
20
5.0
200 -
10 mA
0.25 V
UNITS
W
V
mAT
VT
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to
heatsink
Maximum thermal resistance, case to heatsink R
R
thJ-hs
thC-hs
J
Stg
DC operation single side cooled 0.042
DC operation double side cooled 0.021
DC operation single side cooled 0.006
DC operation double side cooled 0.003
Mounting force, ± 10 %
Approximate weight 425 g
Case style See dimensions - link at the end of datasheet A-24 (K-PUK)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
TEST CONDITIONS UNITS
180° 0.003 0.003 0.002 0.002
120° 0.004 0.004 0.004 0.004
90° 0.005 0.005 0.005 0.005
= TJ maximum K/W
T
J
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
24 500
(2500)
°C
K/W
N
(kg)
Revision: 18-Dec-13
For technical questions within your region: DiodesAmericas@vishay.com
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93718
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Loading...