Vishay VS-ST083SP Series Data Sheet
www.vishay.com
Inverter Grade Thyristors (Stud Version), 85 A
TO-209AC (TO-94)
PRODUCT SUMMARY
Package TO-209AC (TO-94)
Diode variation Single SCR
I
T(AV)
V
DRM/VRRM
V
TM
I
at 50 Hz 2450 A
TSM
I
at 60 Hz 2560 A
TSM
I
GT
T
C/Ths
85 A
400 V to 1200 V
2.15 V
200 mA
85 °C
VS-ST083SP Series
Vishay Semiconductors
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2450 A
60 Hz 2560 A
50 Hz 30
60 Hz 27
Range 10 to 20 μs
85 A
85 °C
135 A
400 to 1200 V
-40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST083S
V
VOLTAGE
CODE
04 400 500
08 800 900
10 1000 1100
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
V
RSM
, MAXIMUM
V
kA2s
I
DRM/IRRM
AT T
MAX.
= TJ MAX.
J
mA
30
Revision: 26-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94334
VS-ST083SP Series
180° el
I
TM
100 μs
I
TM
www.vishay.com
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
50 Hz 210 120 330 270 2540 1930
400 Hz 200 120 350 210 1190 810
1000 Hz 150 80 320 190 630 400
2500 Hz 70 25 220 85 250 100
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50 50 50 50
V
DRM
V
DRM
Rise of on-state current dI/dt 50 50 - - - - A/μs
Case temperature 608560856085°C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 W/μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at
case temperature
Maximum RMS on-state current I
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 300 kA2s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 77 °C case temperature 135
t = 10 ms
t = 8.3 ms 2560
t = 10 ms
t = 8.3 ms 2160
t = 10 ms
t = 8.3 ms 27
t = 10 ms
t = 8.3 ms 19
No voltage
reapplied
100 % V
reapplied
RRM
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal half wave,
initial T
ITM = 300 A, TJ = TJ maximum, tp = 1 0 ms s ine wave pul se 2.1 5
(16.7 % x x I
(I > x I
T(AV)
(16.7 % x x I
(I > x I
T(AV)
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 1.52
< I < x I
T(AV)
T(AV)
), TJ = TJ maximum 2.34
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
Vishay Semiconductors
V
DRM
85 A
85 °C
2450
2060
= TJ maximum
J
), TJ = TJ maximum 1.46
), TJ = TJ maximum 2.32
30
21
A
V
kA
m
mA
A
2
s
VLow level value of threshold voltage V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
dI/dt T
d
= TJ max., V
J
= Rated V
DRM
, ITM = 2 x dI/dt 1000 A/μs
DRM
TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum, ITM = 100 A,
Maximum turn-off time t
q
Revision: 26-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
commutating dI/dt = 10 A/μs
V
= 50 V, tp = 200 μs, dV/dt = 200 V/μs
R
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
VALUES
MIN. MAX.
10 20
Document Number: 94334
UNITS
0.80
μs
VS-ST083SP Series
www.vishay.com
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= TJ maximum, linear to 80 % V
T
Maximum critical rate of rise of off-state voltage dV/dt
Maximum peak reverse and
off-state leakage current
I
RRM
I
DRM
J
higher value available on request
,
TJ = TJ maximum, rated V
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage +V
Maximum peak negative gate voltage -V
Maximum DC gate current required to trigger I
Maximum DC gate voltage required to trigger V
Maximum DC gate current not to trigger I
Maximum DC gate voltage not to trigger V
GM
G(AV)
GM
GM
GM
GT
GT
GD
GD
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp 5 ms
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated V
DRM/VRRM
DRM/VRRM
Vishay Semiconductors
,
DRM
applied 30 mA
applied
500 V/μs
40
5
W
5A
20
5
V
200 mA
3V
20 mA
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
J
Stg
thJC
thCS
DC operation 0.195
Mounting surface, smooth, flat and greased 0.08
Non-lubricated threads
Mounting torque, ± 10 %
Lubricated threads
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.034 0.025
120° 0.041 0.042
T
90° 0.052 0.056
= TJ maximum K/W
J
60° 0.076 0.079
30° 0.126 0.127
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
-40 to 125
-40 to 150
15.5
(137)
14
(120)
(lbf · in)
°C
K/W
N · m
Revision: 26-Mar-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94334
Loading...