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VS-SD453N Series
Data Sheet
11 pgs399.37 Kb0

Vishay VS-SD453N Series, VS-SD453R Series Data Sheet

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B-8
(Stud Version), 400 A, 450 A
PRODUCT SUMMARY
I
F(AV)
Package B-8
Circuit configuration Single diode
400 A, 450 A
Fast Recovery Diodes
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version case style B-8
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
VS-SD453N/R Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
T
C
50 Hz 9300 9600
60 Hz 9730 10 050
Range 1200 to 2500 1200 to 2500 V
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE NUMBER
VS-SD453N/R
VOLTAGE
CODE
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
RRM
PEAK REVERSE VOLTAGE
V
SD453N/R
S20 S30
400 450 A
70 70 °C
630 710
2.0 3.0 μs
25 25
- 40 to 150 - 40 to 150
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
UNITS
I
MAXIMUM
RRM
AT T
= TJ MAXIMUM
J
A
°C
mA
50
Revision: 21-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 93176
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average forward current at case temperature
Maximum RMS forward current at case temperature
I
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V Low level value of forward
slope resistance High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
r
180° conduction, half sine wave
t = 10 ms t = 8.3 ms 9730 10 050 t = 10 ms t = 8.3 ms 8190 8450 t = 10 ms t = 8.3 ms 395 420 t = 10 ms t = 8.3 ms 279 297
(16.7 % x x I T
= TJ maximum
J
(I > x I (16.7 % x x I
f1
T
= TJ maximum
J
(I > x I
f2
Ipk = 1500 A, TJ = TJ maximum,
FM
t
= 10 ms sinusoidal wave
p
No voltage reapplied
100 % V reapplied
No voltage reapplied
100 % V reapplied
F(AV)
), TJ = TJ maximum 1.09 1.04
F(AV)
F(AV)
), TJ = TJ maximum 0.74 0.54
F(AV)
RRM
RRM
< I < x I
< I < x I
Sinusoidal half wave, initial T maximum
),
F(AV)
),
F(AV)
= TJ
J
VS-SD453N/R Series
Vishay Semiconductors
SD453N/R
S20 S30
400 450 A
70 70 °C
630 710 A
55 52 °C
9300 9600
7820 8070
432 460
306 326
1.00 0.95
0.80 0.60
2.20 1.85 V
UNITS
A
kA2s
V
mW
RECOVERY CHARACTERISTICS
TYPICAL VALUES
AT TJ = 150 °C
AT 25 % I
(μs)
RRM
Q
(μC)
rr
3.5 250 120
I
(A)
I
FM
rr
t
rr
dir
dt
CODE
MAXIMUM VALUE
= 25 °C
AT T
J
AT 25 % I
t
rr
RRM
(μs)
TEST CONDITIONS
I
pk
SQUARE
PULSE
dI/dt
(A/μs)
V
(V)
t
r
rr
(A)
S20 2.0 S30 3.0 5.0 380 150
1000 50 - 50
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage temperature range
Maximum thermal resistance, junction to case R Maximum thermal resistance, case to heatsink R Mounting torque ± 10 % Not-lubricated threads 50 Nm Approximate weight 454 g Case style See dimensions (link at the end of datasheet) B-8
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.010 0.008 120° 0.014 0.014
90° 0.017 0.019 60° 0.025 0.026 30° 0.042 0.042
Note
• The table above shows the increment of thermal resistance R
Revision: 21-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TJ, T
thJC
thCS
Stg
DC operation 0.1 Mounting surface, smooth, flat and greased 0.04
when devices operate at different conduction angles than DC
thJC
2
- 40 to 150 °C
T
= TJ maximum K/W
J
Document Number: 93176
I
RM(REC)
K/W
t
Q
rr
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60
70
80
90
100
110
120
130
140
150
0100200300400500
30°
60°
90°
120°
180°
Average Forward Current (A)
Cond uc tion Ang le
Maximum Allo wab le Case Te mperature (°C)
SD 4 5 3 N/ R. . S3 0 Se r i e s R (DC ) = 0.1 K/W
thJC
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 45 3 N/ R. . S3 0 Se r i e s R ( DC) = 0.1 K/ W
thJC
VS-SD453N/R Series
Vishay Semiconductors
150
140
SD 45 3N / R. . S2 0 Se r i e s R (DC ) = 0.1 K/ W
thJC
130
120
110
Cond uctio n Angle
100
90
80
70
60
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350 400 450
30°
60°
90°
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
150
140
SD 45 3 N / R. . S2 0 Se r i e s R ( DC) = 0.1 K/ W
thJC
130
120
110
Cond uc tion Period
100
90
80
70
60
50
Maximum Allowable Case Temp erature (°C)
0 100 200 300 400 500 600 700
30°
60°
90°
120°
180°
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
120°
DC
180°
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
Maximum Average Forward Power Loss (W)
180° 120°
90° 60° 30°
Cond uc tion Ang le
SD 45 3 N / R . . S2 0 Se r i e s T = 150°C
J
0
0 50 100 150 200 250 300 350 400 450
Average Forward Current (A)
RM S Li m it
Fig. 5 - Forward Power Loss Characteristics
Revision: 21-Jan-14
Fig. 3 - Current Ratings Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1000
900
800
700
600
500
400
300
200
100
Maximum Average Forward Power Loss (W)
DC 180° 120°
90°
60°
30°
RM S Lim i t
Conduction Period
SD 45 3N / R . . S20 Se r i e s T = 150°C
J
0
0 100 200 300 400 500 600 700
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
3
Document Number: 93176
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0
100
200
300
400
500
600
700
800
0 100 200 300 400 500
180° 120°
90° 60° 30°
Avera ge Forward Curre nt (A)
Maximum Average Forw ard Power Loss (W)
RM S Li m i t
Conduction Angle
SD 4 5 3 N / R. . S3 0 Se r i e s T = 1 5 0 ° C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC 180° 120°
90°
60°
30°
Average Forward Current (A)
RM S Li m i t
Maximum Avera ge Forward Power Loss (W)
Cond uction Period
SD 45 3 N / R. . S30 Se r i e s T = 1 50 ° C
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Tra in D u r a t io n (s)
Peak Half Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S20 Se ries
Versus Pulse Train Duration.
Initial T = 150 °C
No Voltage Reapplied Rated V Reapplied
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Pea k Ha lf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S30 Serie s
Versus Pulse Train Duration.
Init ia l T = 150 °C
No Volta g e Re ap p lied Rated V Reapplied
RRM
J
VS-SD453N/R Series
Vishay Semiconductors
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
9000
At Any Rated Load Condition And With
Rated V Applied Following Surge.
8000
7000
RRM
Initia l T = 150 °C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Fig. 10 - Maximum Non-Repetitive Surge Current
9000
At An y Rat ed Loa d Condition An d With
Rated V Applied Following Surge.
8000
7000
6000
5000
4000
3000
Pea k Ha lf Sine Wave Forward Current (A)
2000
Number Of Eq ual Amplitud e Half Cyc le Current Pulses (N)
SD 45 3 N/ R . . S3 0 Se r i e s
110100
RRM
Init ial T = 150 °C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Fig. 11 - Maximum Non-Repetitive Surge Current
6000
Revision: 21-Jan-14
5000
4000
3000
Peak Half Sine Wa ve Forwa rd Current (A)
2000
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
For technical questions within your region: DiodesAmericas@vishay.com
SD453N/ R..S20 Se ries
110100
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 12 - Maximum Non-Repetitive Surge Current
4
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93176
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