Vishay VS-SD453N Series, VS-SD453R Series Data Sheet

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B-8

(Stud Version), 400 A, 450 A

PRODUCT SUMMARY

I

F(AV)

Package B-8

Circuit configuration Single diode

400 A, 450 A

Fast Recovery Diodes

FEATURES

• High power fast recovery diode series

• 2.0 μs to 3.0 μs recovery time

• High voltage ratings up to 2500 V

• High current capability

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Compression bonded encapsulation

• Stud version case style B-8

• Maximum junction temperature 150 °C

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

VS-SD453N/R Series

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

V

RRM

t

rr

T

J

T

C

50 Hz 9300 9600

60 Hz 9730 10 050

Range 1200 to 2500 1200 to 2500 V

T

J

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

VS-SD453N/R

VOLTAGE

CODE

12 1200 1300

16 1600 1700

20 2000 2100

25 2500 2600

RRM

PEAK REVERSE VOLTAGE

V

SD453N/R

S20 S30

400 450 A

70 70 °C

630 710

2.0 3.0 μs

25 25

- 40 to 150 - 40 to 150

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

UNITS

I

MAXIMUM

RRM

AT T

= TJ MAXIMUM

J

A

°C

mA

50

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FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current 
at case temperature

Maximum RMS forward current at
case temperature

I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward

slope resistance
High level value of forward

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave

t = 10 ms
t = 8.3 ms 9730 10 050
t = 10 ms
t = 8.3 ms 8190 8450
t = 10 ms
t = 8.3 ms 395 420
t = 10 ms
t = 8.3 ms 279 297

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I
(16.7 % x  x I

f1

T

= TJ maximum

J

(I >  x I

f2

Ipk = 1500 A, TJ = TJ maximum, 

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.09 1.04

F(AV)

F(AV)

), TJ = TJ maximum 0.74 0.54

F(AV)



RRM



RRM

< I <  x I

< I <  x I

Sinusoidal half wave,
initial T
maximum

),

F(AV)

),

F(AV)

= TJ

J

VS-SD453N/R Series

Vishay Semiconductors

SD453N/R

S20 S30

400 450 A

70 70 °C

630 710 A

55 52 °C

9300 9600

7820 8070

432 460

306 326

1.00 0.95

0.80 0.60

2.20 1.85 V

UNITS

A

kA2s

V

mW

RECOVERY CHARACTERISTICS

TYPICAL VALUES

AT TJ = 150 °C

AT 25 % I

(μs)

RRM

Q

(μC)

rr

3.5 250 120

I

(A)

I

FM

rr

t

rr

dir

dt

CODE

MAXIMUM VALUE

= 25 °C

AT T

J

AT 25 % I

t

rr

RRM

(μs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/μs)

V

(V)

t

r

rr

(A)

S20 2.0
S30 3.0 5.0 380 150

1000 50 - 50

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating and storage
temperature range

Maximum thermal resistance, junction to case R
Maximum thermal resistance, case to heatsink R
Mounting torque ± 10 % Not-lubricated threads 50 Nm
Approximate weight 454 g
Case style See dimensions (link at the end of datasheet) B-8

R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.010 0.008
120° 0.014 0.014

90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042

Note

• The table above shows the increment of thermal resistance R

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TJ, T

thJC

thCS

Stg

DC operation 0.1
Mounting surface, smooth, flat and greased 0.04

when devices operate at different conduction angles than DC

thJC

2

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- 40 to 150 °C

T

= TJ maximum K/W

J

Document Number: 93176

I

RM(REC)

K/W

t

Q

rr

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60

70

80

90

100

110

120

130

140

150

0100200300400500

30°

60°

90°

120°

180°

Average Forward Current (A)

Cond uc tion Ang le

Maximum Allo wab le Case Te mperature (°C)

SD 4 5 3 N/ R. . S3 0 Se r i e s
R (DC ) = 0.1 K/W

thJC

40

50

60

70

80

90

100

110

120

130

140

150

0 200 400 600 800

30°

60°

90°

180°

DC

120°

Average Forward Current (A)

Conduction Period

Maximum Allowable Case Temperature (°C)

SD 45 3 N/ R. . S3 0 Se r i e s
R ( DC) = 0.1 K/ W

thJC

VS-SD453N/R Series

Vishay Semiconductors

150

140

SD 45 3N / R. . S2 0 Se r i e s
R (DC ) = 0.1 K/ W

thJC

130

120

110

Cond uctio n Angle

100

90

80

70

60

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350 400 450

30°

60°

90°

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

150

140

SD 45 3 N / R. . S2 0 Se r i e s
R ( DC) = 0.1 K/ W

thJC

130

120

110

Cond uc tion Period

100

90

80

70

60

50

Maximum Allowable Case Temp erature (°C)

0 100 200 300 400 500 600 700

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

120°

DC

180°

Fig. 4 - Current Ratings Characteristics

800

700

600

500

400

300

200

100

Maximum Average Forward Power Loss (W)

180°
120°

90°
60°
30°

Cond uc tion Ang le

SD 45 3 N / R . . S2 0 Se r i e s
T = 150°C

J

0

0 50 100 150 200 250 300 350 400 450

Average Forward Current (A)

RM S Li m it

Fig. 5 - Forward Power Loss Characteristics

Revision: 21-Jan-14

Fig. 3 - Current Ratings Characteristics

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1000

900

800

700

600

500

400

300

200

100

Maximum Average Forward Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Lim i t

Conduction Period

SD 45 3N / R . . S20 Se r i e s
T = 150°C

J

0

0 100 200 300 400 500 600 700

Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

3

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0

100

200

300

400

500

600

700

800

0 100 200 300 400 500

180°
120°

90°
60°
30°

Avera ge Forward Curre nt (A)

Maximum Average Forw ard Power Loss (W)

RM S Li m i t

Conduction Angle

SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C

J

0

100

200

300

400

500

600

700

800

900

1000

0 100 200 300 400 500 600 700 800

DC
180°
120°

90°

60°

30°

Average Forward Current (A)

RM S Li m i t

Maximum Avera ge Forward Power Loss (W)

Cond uction Period

SD 45 3 N / R. . S30 Se r i e s
T = 1 50 ° C

J

2000

3000

4000

5000

6000

7000

8000

9000

10000

0.01 0.1 1

Pulse Tra in D u r a t io n (s)

Peak Half Sine Wave Forward Current (A)

Maximum Non Repetitive Surge Current

SD453N/ R..S20 Se ries

Versus Pulse Train Duration.

Initial T = 150 °C

No Voltage Reapplied
Rated V Reapplied

RRM

J

2000

3000

4000

5000

6000

7000

8000

9000

10000

0.01 0.1 1

Pulse Train Duration (s)

Pea k Ha lf Sine Wave Forward Current (A)

Maximum Non Repetitive Surge Current

SD453N/ R..S30 Serie s

Versus Pulse Train Duration.

Init ia l T = 150 °C

No Volta g e Re ap p lied
Rated V Reapplied

RRM

J

VS-SD453N/R Series

Vishay Semiconductors

Fig. 7 - Forward Power Loss Characteristics

Fig. 8 - Forward Power Loss Characteristics

9000

At Any Rated Load Condition And With

Rated V Applied Following Surge.

8000

7000

RRM

Initia l T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 10 - Maximum Non-Repetitive Surge Current

9000

At An y Rat ed Loa d Condition An d With

Rated V Applied Following Surge.

8000

7000

6000

5000

4000

3000

Pea k Ha lf Sine Wave Forward Current (A)

2000

Number Of Eq ual Amplitud e Half Cyc le Current Pulses (N)

SD 45 3 N/ R . . S3 0 Se r i e s

110100

RRM

Init ial T = 150 °C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 11 - Maximum Non-Repetitive Surge Current

6000

Revision: 21-Jan-14

5000

4000

3000

Peak Half Sine Wa ve Forwa rd Current (A)

2000

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

Fig. 9 - Maximum Non-Repetitive Surge Current

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SD453N/ R..S20 Se ries

110100

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Fig. 12 - Maximum Non-Repetitive Surge Current

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VS-SD453N/R Series

100

1000

10000

0.5 1 1.5 2 2. 5 3 3.5 4

T = 2 5° C

J

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

T = 150°C

J

SD453N/ R. .S30 Se ries

0

20

40

60

80

100

0 400 800 120016002000

T = 2 5 ° C

J

Forwa rd Rec overy (V)

T = 1 5 0 °C

J

SD 45 3 N/ R . . S3 0 Se r i e s

Rate Of Rise Of Forward Current - di/dt (A/us)

I

V

FP

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10000

SD453N/ R..S20 Serie s

1000

T = 2 5 ° C

J

T = 150°C

Instantaneous Forwa rd Current (A)

100

0.5 1 1.5 2 2.5 3 3.5

Instantaneous Forward Voltage (V)

Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics

1

J

Vishay Semiconductors

thJC

0.1

0.01

Transient Thermal Impedance Z (K/W)

0.001

0.001 0.01 0.1 1 10

100

V

FP

80

60

Revision: 21-Jan-14

40

Fo rw a rd Rec ove ry (V)

20

0

0 400 800 1200 1600 2000

Rate Of Rise Of Forw ard Current - di/dt (A/us)

Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics

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Steady Sta te Value:
R = 0.1 K/W

thJC

(DC Operation)

T = 150°C

I

J

T = 2 5 ° C

J

SD 45 3 N / R . . S20 Se r i e s

Sq u a r e W a v e P u l se D u ra t i o n ( s)

Fig. 15 - Thermal Impedance Z

5

SD453N/ R..S20/ S30 Se rie s

Characteristic

thJC

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0

100

200

300

400

500

600

700

800

0 50 100 150 200 250 300

Maximum Reverse Rec overy Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

500 A

150 A

I = 1000 A

Si n e Pu l s e

FM

SD 45 3N / R. . S2 0 Se r ie s
T = 150 °C; V > 100V

J

r

VS-SD453N/R Series

Vishay Semiconductors

6

SD 45 3 N / R. . S2 0 Se r i e s

5.5

T = 150 °C; V > 100V

J

r

5

4.5

4

3.5

I = 1000 A

FM

Si n e Pu l se

500 A

150 A

3

2.5

Maximum Reverse Rec overy Time - Trr (µs)

2

10 100 1000

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 18 - Recovery Time Characteristics

7

6.5

SD453N/ R..S30 Se rie s
T = 150 °C, V > 100V

J

r

6

5.5

I = 1000 A

5

4.5

4

FM

Si n e Pu l se

500 A

150 A

3.5

3

2.5

Maximum Reverse Recovery Time - Trr (µs)

2

10 100 1000

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 21 - Recovery Time Characteristics

1200

I = 1000 A

1000

FM

Si n e Pu l se

800

500 A

600

400

150 A

Fig. 19 - Recovery Charge Characteristics

450

400

350

300

I = 1000 A

FM

Sin e Pulse

500 A

150 A

250

200

150

100

50

0

Maximum Reverse Recovery Current - Irr (A)

0 50 100 150 200 250 300

Rate Of Fall Of Forward Current - di/d t (A/µs)

Fig. 20 - Recovery Current Characteristics

SD 45 3N / R. . S20 Se r i e s
T = 150 °C; V > 100V

J

200

SD453N/ R.. S30 Series
T = 150 °C; V > 100V

J

r

0

0 50 100 150 200 250 300

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 22 - Recovery Charge Characteristics

550

500

450

400

350

I = 1000 A

FM

Si n e Pu l se

500 A

150 A

300

250

200

150

100

r

50

0

Ma ximum Re verse Rec ove ry C urrent - Irr ( A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

SD 4 5 3N / R. . S3 0 Se r ie s
T = 150 °C; V > 100V

J

r

0 50 100 150 200 250 300

Fig. 23 - Recovery Current Characteristics

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1E4

1E2

1E3

1E4

1 E1 1 E2 1 E3 1 E4

Pulse Ba se w id t h ( µs)

50 Hz

200

10000

100

4000

dv/dt = 1000V/us

400

1000

2000

6000

Peak Forward Current (A)

Si n u s o i d a l P u l se

1500

3000

T = 70°C, V = 800V

C

RRM

SD 45 3 N/ R. . S2 0 Se r ie s

tp

600

1E2

1E3

1E4

1E1 1E2 1E3 1E4

1

2

Pulse Basew id t h ( µs)

4

10 joules per pulse

6

Trapezoidal Pulse

Peak Forw a rd Curren t (A)

0.8

0.6

SD 45 3 N/ R. .S2 0 Se r i e s

T = 150°C, V = 800V

J

RRM

d v/d t = 1000V/ µs; d i/d t = 300A/ µs

tp

0.4

1E2

1E3

1E4

1E1 1E2 1E3 1E4

Pu l se Ba se wid t h ( µ s)

Tr a p e z o i d a l Pu l se

50 Hz

100200

400

1000

1500

2000

4000

3000

600

6000

Pea k Fo rw ar d Cu rr en t ( A)

SD 45 3 N/ R. . S2 0 Se r ie s

T = 70°C, V = 800V
dv/dt = 1000V/us,
d i/ d t = 300A / us

RRM

C

tp

1E2

1E3

1E4

1E1 1E2 1E3 1E4

1

2

Pulse Ba se w i d t h (µs)

4

10 joules per pulse

6

Trapezoidal Pulse

Peak Forwa rd Current (A)

0.6

0.4

SD 45 3N / R. . S2 0 Se r i e s

dv/dt = 1000V/µs
d i/ d t = 100A/ µs

T = 1 50 ° C , V = 8 0 0 V

J

RRM

tp

0.2

1E3

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2

1

0.6

0.4

0.2

0.1

10 joule s p er p ulse

6

4

VS-SD453N/R Series

Vishay Semiconductors

Pea k Forw a rd Curren t (A)

1E2

SD 45 3 N / R. . S2 0 Se r i e s
Sinusoida l Pulse
T = 150°C, V = 800V

J

tp

d v/ d t = 1000V/ µs

RRM

1E1 1E2 1E3 1E4

Pu lse Ba sew i d t h ( µ s)

Fig. 24 - Maximum Total Energy Loss

Per Pulse Characteristics

Fig. 25 - Frequency Characteristics

Fig. 27 - Frequency Characteristics

Fig. 28 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

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Fig. 26 - Maximum Total Energy Loss

Per Pulse Characteristics

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tp

1000

600

400

200

100

1E3

Pea k Forw a rd Current ( A)

6000

4000

3000

2000

1500

SD45 3N/ R..S20 Serie s
Tr a p e z o i d a l Pu l se
T = 70°C, V = 800V

C

dv/dt = 1000V/us,
d i/ d t = 100A / us

50 Hz

RRM

1E2

1E1 1E2 1E3 1E4

Pu lse Ba se w i d t h ( µs)

Fig. 29 - Frequency Characteristics

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1E4

1E2

1E3

1E4

1 E 1 1 E2 1 E3 1 E4

Pulse Ba se w id t h (µ s)

Tr a p e z o i d a l Pu l se

50 Hz

100

200

400

1000

2000

4000

3000

600

Pea k Forw a r d C urrent (A)

dv/dt = 1000V/us,
di/dt = 300A/us

T = 70°C, V = 800V

SD 45 3N / R . . S30 Se r i e s

RRM

tp

1E2

1E3

1E4

1E11E21E31E4

1

2

Pulse Base w id t h ( µs)

4

10 joules per pulse

6

Trapezoidal Pulse

Peak Forward Current (A)

SD 45 3 N / R. . S3 0 Se r ie s

T = 1 5 0 °C , V = 8 0 0 V

J

RRM

0.8

0.6

d v/ d t = 1000V/ µs; d i/ d t = 100A/ µs

tp

0.4

1E3

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2

1

0.8

0.6

0.4

0.2

0.1

10 jo ule s p er p ulse

6

4

VS-SD453N/R Series

Vishay Semiconductors

Pe a k Fo rw ar d C ur re n t ( A)

SD45 3N/ R.. .S30 Series
Sinusoida l Pulse
T = 150°C, V = 800V

J

tp

dv/dt = 1000V/µs

RRM

1E2

1E1 1E2 1E3 1E4

Pulse Basew id t h ( µs)

Fig. 30 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

6000

400

200

1000

1500

4000

6000

2000

3000

tp

1E3

Pe a k Fo rw ar d Cu rr e nt ( A)

100

SD 45 3 N / R. . S3 0 Se r ie s
Si n u so id a l Pu l se
T = 70°C, V = 800V

C

dv/dt = 1000V/us

RRM

1E2

1 E1 1 E2 1 E3 1 E4

Pulse Ba sew id th ( µ s)

Fig. 31 - Frequency Characteristics

1E4

Fig. 33 - Frequency Characteristics

50 Hz

Fig. 34 - Maximum Total Energy Loss

Per Pulse Characteristics

1E4

10 joules per pulse

6

4

2

1E3

Pea k Forwa rd Curre nt (A)

1E2

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1E1 1E2 1E3 1E4

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0.6

tp

Fig. 32 - Maximum Total Energy Loss

Per Pulse Characteristics

1

0.8

SD45 3N/R..S30 Serie s
Trapezoidal Pulse
T = 150°C, V = 800V

J

d v/ d t = 1000V/ µs; d i/ d t = 300A/ µs

RRM

Pulse Ba se w i d t h ( µs)

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tp

50 Hz

1E3

2000

Peak Forward Current (A)

3000

4000

1000

1500

400

600

1E2

100200

SD 45 3N / R . .S3 0 Series
Tr a p e zo i d a l Pu l se
T = 70°C, V = 800V

C

dv/dt = 1000V/ us,

di/ dt = 100A / us

RRM

1E1 1E2 1E3 1E4

Pul se Ba se w id th ( µs)

Fig. 35 - Frequency Characteristics

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Device code

51

32 4

6 7 8 9 10

SDVS- 45 3 N 25 S30 P S C

2

- Diode

1

- Vishay Semiconductors product

3

- Essential part number

4

- 3 = Fast recovery

5

- N = Stud normal polarity (cathode to stud)

R = Stud reverse polarity (anode to stud)

6

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

7

-trr code (see Recovery Characteristics table)

8

- P = Stud base B-8 3/4" 16UNF-2A

M = Stud base B-8 M24 x 1.5

9

-7

S = Isolated lead with silicon sleeve

(red = Reverse polarity; blue = Normal polarity)

None = Not isolated lead

T = Threaded top terminal 3/8" 24UNF-2A

10

- C = Ceramic housing

ORDERING INFORMATION TABLE

VS-SD453N/R Series

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95303

Revision: 21-Jan-14

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

9

, [e-mail], [e-mail]

Document Number: 93176

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

B-8

Ceramic housing

245 (9.645)
255 (10.04)

115 (4.52) MIN.

27.5 (1.08)
MAX.

12 (0.47) MIN.

38 (1.5)

DIA. MAX.

26 (1.023) MAX.

10.5 (0.41) DIA.

C.S. 70 mm

47 (1.85)

21 (0.83) MAX.

5 (0.20) ± 0.3 (0.01)

2

80 (3.15)

MAX.

MAX.

SW 45

3/4"-16UNF-2A *

*For metric device: M24 x 1.5 - length 21 (0.83) MAX.

Document Number: 95303 For technical questions, contact: [e-mail]
Revision: 11-Apr-08 1

contact factory

www.vishay.com

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Revision: 02-Oct-12

1

Document Number: 91000