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(Hockey PUK Version), 350 A
PRODUCT SUMMARY
I
F(AV)
Package DO-200AA
Circuit configuration Single diode
Fast Recovery Diodes
FEATURES
• High power FAST recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC
• Maximum junction temperature 125 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
350 A
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
VS-SD303C..C Series
Vishay Semiconductors
®
DO-200AA
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
t
rr
T
J
T
hs
T
hs
50 Hz 5770
60 Hz 6040
50 Hz 166
60 Hz 152
Range 400 to 2500 V
T
J
350 A
55 °C
550 A
25 °C
1.0 to 2.0 μs
25
- 40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM
V
TYPE NUMBER
VS-SD303C..S10C
VS-SD303C..S15C
VS-SD303C..S20C
, MAXIMUM REPETITIVE PEAK
V
VOLTAGE
CODE
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
20 2000 2100
25 2500 2600
RRM
AND OFF-STATE VOLTAGE
V
NON-REPETITIVE PEAK REVERSE
RSM
VOLTAGE
V
I
MAXIMUM
RRM
AT T
A
kA2s
°C
= 125 °C
J
mA
35
Revision: 15-Apr-14
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Document Number: 93174
VS-SD303C..C Series
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature
Maximum RMS current I
Maximum peak, one-cycle ,
non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1660 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level of forward slope resistance r
High level of forward slope resistance r
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled 550
t = 10 ms
t = 8.3 ms 6040
t = 10 ms
t = 8.3 ms 5080
t = 10 ms
t = 8.3 ms 152
t = 10 ms
t = 8.3 ms 107
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
f1
(I > π x I
f2
Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.26 V
FM
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 1.63
F(AV)
F(AV)
), TJ = TJ maximum 0.77
F(AV)
RRM
RRM
< I < π x I
< I < π x I
Sinusoidal half wave,
initial T
= TJ
J
maximum
), TJ = TJ maximum 1.14
F(AV)
), TJ = TJ maximum 1.14
F(AV)
Vishay Semiconductors
350 (175) A
55 (75) °C
5770
A
4850
166
117
kA2s
V
mW
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
= 25 °C
J
t
AT 25 % I
rr
RRM
(μs)
TEST CONDITIONS
I
pk
SQUARE
PULSE
dI/dt
(A/μs)
V
(V)
r
AT 25 % I
t
rr
(A)
S10 1.0
S15 1.5 2.9 90 44
750 25 - 30
S20 2.0 3.2 107 46
TYPICAL VALUES
AT TJ = 125 °C
RRM
(μs)
Q
(μC)
rr
2.4 52 33
I
(A)
rr
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to heatsink
R
J
Stg
thJ-hs
DC operation single side cooled 0.16
DC operation double side cooled 0.08
Mounting force, ± 10 % 4900 (500) N (kg)
Approximate weight 70 g
Case style See dimensions - link at the end of datasheet DO-200AA
ΔR
CONDUCTION ANGLE
CONDUCTION
thJ-hs
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.008 0.008
120° 0.012 0.013 0.013 0.013
90° 0.016 0.016 0.018 0.018
60° 0.024 0.024 0.025 0.025
30° 0.042 0.042 0.042 0.042
Note
• The table above shows the increment of thermal resistance R
Revision: 15-Apr-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
when devices operate at different conduction angles than DC
thJ-hs
2
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- 40 to 125
- 40 to 150
°C
K/W
TEST CONDITIONS UNITS
= TJ maximum K/W
T
J
Document Number: 93174
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50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
180°
DC
120°
Average Forward C urrent (A)
Maximum Allowable Heatsink Temperature (°C)
SD 303C ..C Series
(Single Side Cooled)
R ( D C ) = 0 .1 6 K /W
thJ-h s
Conduction Period
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD303C..C Series
(D ou ble Side Coole d)
R (DC) = 0.08 K/W
th J-hs
0
100
200
300
400
500
600
700
800
900
1000
0100200300400500600
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Lim it
Maximum Average Forw ard Pow er Loss (W )
Conduction Period
SD 303 C..C Se ries
T = 125°C
J
VS-SD303C..C Series
Vishay Semiconductors
130
120
110
100
90
80
70
60
0 20 40 60 80 100 120 140 160 180
Maximum Allowable Heatsink Temperature (°C)
Averag e Forw ard Current (A)
SD303C..C Series
(Single Side Cooled)
R (DC ) = 0.1 6 K/W
th J-hs
Conduction Angle
30°
60°
90°
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
120°
180°
Fig. 4 - Current Ratings Characteristics
800
700
600
500
400
300
200
100
0
Maximum Average Forw ard Power Loss (W)
180°
120°
90°
60°
30°
0 50 100 150 200 250 300 350 400
Average Forward Current (A)
RMS Limit
Conduction Angle
SD 3 03C ..C Se ries
T = 125°C
J
Fig. 5 - Forward Power Loss Characteristics
130
120
110
100
90
80
70
60
Revision: 15-Apr-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
50
40
0 50 100 15 0 2 00 250 300 35 0 400
Maximum Allowable Heatsink Temperature (°C)
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
For technical questions within your region: DiodesAmericas@vishay.com
SD303C..C Series
(Double Side Cooled)
R (DC ) = 0.0 8 K/W
thJ-h s
Conduction Angle
90°
60°
30°
120°
180°
Fig. 6 - Forward Power Loss Characteristics
3
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Document Number: 93174