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DO-205AB (DO-9)
VS-SD300N/R Series
Standard Recovery Diodes
(Stud Version), 380 V
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
•Standard JEDEC
• Compression bonded encapsulations
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
®
types
Vishay Semiconductors
PRODUCT SUMMARY
I
F(AV)
Package DO-205AB (DO-9)
Circuit configuration Single diode
380 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
C
50 Hz 6050
60 Hz 6335
50 Hz 183
60 Hz 167
Range 1600 to 2000 2500 to 3200 V
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
VS-SD300N/R
16 to 20 25 to 32
380 A
100 70 °C
595 425
-40 to +180 -40 to +150 °C
UNITS
kA2s
A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE NUMBER
VS-SD300N/R
Revision: 25-Nov-13
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VOLTAGE
CODE
16 1600 1700
20 2000 2100
25 2500 2600
28 2800 2900
32 3200 3300
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
PEAK REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
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V
I
RRM
AT T
Document Number: 93545
MAXIMUM
= TJ MAXIMUM
J
mA
15
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FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1830 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
f1
f2
FM
180° conduction, half sine wave
DC at TC = 88 °C (02 to 24), TC = 91 °C (25 to 32) 595 425
t = 10 ms
t = 8.3 ms 6335
t = 10 ms
t = 8.3 ms 5330
t = 10 ms
t = 8.3 ms 167
t = 10 ms
t = 8.3 ms 118
(16.7 % x x I
T
= TJ maximum
J
(I > x I
(16.7 % x x I
T
= TJ maximum
J
(I > x I
No voltage
reapplied
100 % V
reapplied
RRM
Sinusoidal half wave,
initial
No voltage
T
= TJ maximum
J
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 1.05
F(AV)
F(AV)
), TJ = TJ maximum 0.66
F(AV)
RRM
< I < x I
< I < x I
F(AV)
F(AV)
Ipk = 1180 A, TJ = TJ maximum,
t
= 10 ms sinusoidal wave
p
VS-SD300N/R Series
Vishay Semiconductors
SD300N/R
16 to 20 25 to 32
380 270 A
100 100 °C
300 380 A
125 70 °C
6050
5090
183
129
),
),
0.95
0.75
1.83 V
UNITS
A
2
kA
V
m
s
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
R
R
T
J
Stg
thJC
thCS
DC operation 0.11
Mounting surface, smooth, flat and greased 0.04
Not-lubricated threads 27 Nm
Approximate weight 250 g
Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)
Revision: 25-Nov-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SD300N/R
16 to 20 25 to 32
-40 to 180 -40 to 150
-55 to 200
Document Number: 93545
UNITS
°C
K/W
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80
90
100
110
120
130
140
150
160
170
180
0 50 100 150 200 250 300 35 0 4 00
30°
60°
90°
120°
180°
Average Forward Current (A)
Cond uction Ang le
Maximum Allowab le Case Temperature (°C)
R (DC) = 0.11 K/W
thJC
SD300N/R Series (1600V t o 2000V)
VS-SD300N/R Series
Vishay Semiconductors
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.019 0.013
120° 0.023 0.023
T
90° 0.028 0.030
= TJ maximum K/W
J
60° 0.042 0.044
30° 0.073 0.074
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
150
140
130
120
110
100
90
Maximum Allowab le Case Temperature (°C)
SD300N/ R Se ries (2500V t o 3200V)
050100150200250300
Average Forward Current (A)
R (DC) = 0.11 K/ W
thJC
Cond uction Angle
90°
60°
30°
120°
180°
Fig. 1 - Current Ratings Characteristics
180
170
160
150
140
130
120
110
100
90
80
Maximum Allowa ble Ca se Temperature (°C)
0 100 200 300 400 500 600 700
Fig. 2 - Current Ratings Characteristics
Revision: 25-Nov-13
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Fig. 3 - Current Ratings Characteristics
SD300N/ R Se ries (1 600V t o 2000V)
30°
Average Forward Current (A)
R (DC) = 0.11 K/W
thJC
Conduction Period
90°
120°
60°
180°
DC
150
140
130
120
110
100
90
80
Maximum Allowa ble Case Temperature (°C)
SD 30 0N / R Se r i e s ( 2 50 0 V t o 3 20 0V )
30°
0 100 200 300 400 500
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
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R (DC) = 0.11 K/ W
thJC
Conduction Period
60°
90°
120°
180°
Document Number: 93545
DC
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20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
3
K
/
W
D
e
l
t
a
R
t
h
S
A
0
.
0
6
K
/
W
0
.
4
K
/
W
0
.
2
K
/
W
0
.
1
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
2
K
/
W
0
100
200
300
400
500
600
700
0 50 100 150 200 250 3 00 350 4 00
180°
120°
90°
60°
30°
RM S Li m it
Cond uction Ang le
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD 3 0 0N / R Se r i e s
(1600V t o 2000V)
T = 18 0 °C
J
20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
3
K
/
W
D
e
l
t
a
R
t
h
S
A
0
.
0
6
K
/
W
0
.
4
K
/
W
0
.
2
K
/
W
0
.
1
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
2
K
/
W
0
100
200
300
400
500
600
700
800
900
0 100 200 300 400 500 600
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD300N/ R Serie s
(1600V to 2000V)
T = 18 0° C
J
VS-SD300N/R Series
Vishay Semiconductors
Fig. 5 - Forward Power Loss Characteristics
Revision: 25-Nov-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 6 - Forward Power Loss Characteristics
700
600
180°
120°
90°
500
400
60°
30°
RM S Li m it
300
200
100
0
Maximum Average Forward Power Loss (W)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0 50 100150200250300350400
Average Forward Current (A)
Cond uction Angle
SD300N/ R Se ries
(2500V to 3200V)
T = 150°C
J
Fig. 7 - Forward Power Loss Characteristics
R
t
h
S
A
=
0
.
0
0
.
2
0
6
K
K
/
W
/
W
-
0
.
1
K
/
0
.
2
K
/
W
0
.
4K
/
W
0
.
8
K
/
1
.
8
K
/
W
D
e
l
t
W
W
a
R
25 50 75 100 125 150
Maximum Allowab le Ambient Temperature (°C)
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1500
2000
2500
3000
3500
4000
4500
5000
5500
110100
Number Of Equal Amp litude Half Cyc le Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD 30 0N / R Se r i e s
Ini t ia l TJ = TJ max.
@ 60 Hz 0.0083 s
@ 5 0 H z 0 . 01 00 s
At Any Rated Load Condition And With
Rat ed V App lied Follow ing Surge.
RRM
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.01 0.1 1
Pulse Tra in Du ra t io n ( s)
Pe a k Ha lf Sin e Wa ve Fo rw a rd Cu r re n t ( A)
Versus Pulse Train Dura tion.
Maximum Non Rep etit ive Surge Curren t
SD 30 0N / R Se r i e s
Init ia l T = T ma x.
No Vo lt a ge Rea p p lied
Rat ed V Re applied
RRM
J
J
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 25 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
SD300N/ R Serie s
T = T m a x .
J
J
900
800
700
600
500
RM S Li mi t
400
300
200
100
0
Maximum Average Forward Power Loss (W)
0 1 00 200 300 400 500 600
DC
180°
120°
90°
60°
30°
Conduction Period
SD300N/ R Se ries
(2500V to 3200V)
T = 150°C
J
Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
VS-SD300N/R Series
Vishay Semiconductors
R
t
h
S
A
=
0
.
0
2
K
0
/
.
W
0
6
-
K
/
D
W
e
l
t
0
.
1
K
/
W
0
.
2
K
/
W
0
.
4
K
/
W
0
.
8
K
/
W
1
.
8
K
/
W
25 50 75 100 12 5 150
Maximum Allowable Ambient Temperature (°C)
a
R
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
Revision: 25-Nov-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Forward Voltage Drop Characteristics
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0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq uare Wave Pulse Durat ion (s)
thJC
Tr a n si e n t The rmal Imp eda nc e Z (K/W)
Steady State Value:
R = 0.11 K/W
(DC Operation)
SD 30 0N / R Se ri e s
thJC
Device code
51 32 4 6 7 8
SDVS- 30 0 N 32 P C
- Diode
1 - Vishay semiconductors product
2
- Essential part number3
- 0 = Standard recovery4
- N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)6
- P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
7
8
- C = Ceramic housing
For metric device M16 x 1.5 contact factory
VS-SD300N/R Series
Vishay Semiconductors
Fig. 12 - Thermal Impedance Z
ORDERING INFORMATION TABLE
Characteristics
thJC
Dimensions www.vishay.com/doc?95301
LINKS TO RELATED DOCUMENTS
Revision: 25-Nov-13
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Document Number: 93545
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
Ceramic housing
210 (8.27)
± 10 (0.39)
82 (3.23)
MIN.
DIA. 8.5 (0.33) NOM.
DIA. 27.5
(1.08) MAX.
21 (0.82)
MAX.
9.5 (0.37) MIN.
16 (0.63)
MAX.
19 (0.75)
MAX.
39 (1.53)
MAX.
C.S. 35 mm
(0.054 s.i.)
SW 32
4 (0.16)
MAX.
2
3/4"-16UNF-2A*
Document Number: 95301 For technical questions, contact: indmodules@vishay.com
Revision: 09-Apr-08 1
*For metric device: M16 x 1.5
contact factory
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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