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DO-205AB (DO-9)
PRODUCT SUMMARY
I
F(AV)
Package DO-205AB (DO-9)
Circuit configuration Single diode
Fast Recovery Diodes
(Stud Version) 200 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version JEDEC
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
200 A
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
VS-SD203N/R Series
Vishay Semiconductors
®
DO-205AB (DO-9)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
t
rr
T
J
T
C
50 Hz 4990
60 Hz 5230
50 Hz 125
60 Hz 114
Range 400 to 2500 V
Range 1.0 to 2.0 μs
T
J
200 A
85 °C
314
25
-40 to +125
A
kA2s
°C
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Document Number: 93170
VS-SD203N/R Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD203N/R..S10
VS-SD203N/R..S15
VS-SD203N/R..S20
, MAXIMUM REPETITIVE
V
VOLTAGE
CODE
RRM
PEAK AND OFF-STATE VOLTAGE
V
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
20 2000 2100
25 2500 2600
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS current I
Maximum peak, one-cycle
non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
f1
f2
FM
180° conduction, half sine wave
DC at 76 °C case temperature 314
t = 10 ms
t = 8.3 ms 5230
t = 10 ms
t = 8.3 ms 4400
t = 10 ms
t = 8.3 ms 114
t = 10 ms
t = 8.3 ms 81
(16.7 % x x I
T
= TJ maximum
J
(I > x I
(16.7 % x x I
T
= TJ maximum
J
(I > x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 1.47
F(AV)
F(AV)
), TJ = TJ maximum 0.46
F(AV)
RRM
< I < x I
< I < x I
Ipk = 628 A, TJ = 25 °C, tp = 400 μs square pulse 1.65 V
Vishay Semiconductors
I
RRM
T
200 A
85 °C
4990
4200
125
88
1.00
1.10
F(AV)
F(AV)
V
J
),
),
= TJ maximum
MAXIMUM
= 125 °C
J
mA
35
A
kA2s
V
mW
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
= 25 °C
J
AT 25 % I
t
rr
RRM
(μs)
TEST CONDITIONS
I
pk
SQUARE
PULSE
dI/dt
(A/μs)
V
(V)
t
r
rr
(A)
S10 1.0
S15 1.5 2.9 90 44
750 25 - 30
S20 2.0 3.2 107 46
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TYPICAL VALUES
AT TJ = 125 °C
AT 25 % I
(μs)
RRM
Q
(μC)
rr
I
(A)
rr
2.4 52 33
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I
FM
dir
dt
t
rr
t
Q
rr
I
RM(REC)
VS-SD203N/R Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight 250 g
Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)
J
Stg
R
thJC
R
thCS
DC operation 0.115
Mounting surface, smooth, flat and greased 0.08
Not-lubricated threads 31
Lubricated threads 24.5
Vishay Semiconductors
-40 to +125
-40 to +150
°C
K/W
Nm
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.010 0.008
120° 0.013 0.014
90° 0.017 0.019
= TJ maximum K/W
T
J
60° 0.025 0.027
30° 0.044 0.044
Note
• The table above shows the increment of thermal resistance R
130
120
110
100
90
80
70
0 40 80 120 160 200 240
Maximum Allowable Case Temperature (°C)
SD203N/R Series
R (DC) = 0.115 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Average Forward Current (A)
when devices operate at different conduction angles than DC
thJC
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350
SD203N/R Series
R (DC) = 0.115 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average Forward Current (A)
DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
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0
50
100
150
200
250
300
350
0 50 100 150 200
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD203N/R Series
T = 125 °C
J
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300 350
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
SD203N/R Series
T = 125°C
J
1000
1500
2000
2500
3000
3500
4000
4500
5000
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD203N/R Series
Initial T = 125 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 125 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
SD203N/R Series
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
(K/W)
SD203N/R Series
Steady State Value:
R = 0.115 K/W
(DC Operation)
thJC
VS-SD203N/R Series
Vishay Semiconductors
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
10 000
T = 25 °C
J
T = 125 °C
J
1000
SD203N/R Series
Instantaneous Forward Current (A)
100
0.5 2.5 4.5 6.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
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Fig. 8 - Thermal Impedance Z
4
Characteristic
thJC
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0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
Rate Off Fall Of Forward Current di/dt (A/μs)
T = 125 °C
T = 25 °C
J
J
SD203N/R..S20 Series
I
V
FP
1.6
1.8
2
2.2
2.4
2.6
2.8
10010
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Maximum Reverse Recovery Time - t
rr
(μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S10 Series
T = 125 °C, V
R
= 30 V
J
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20 40 60 80 100
Maximum Reverse Recovery Charge - Q
rr
(μC)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S10 Series
T
J
= 125 °C, VR = 30 V
20
30
40
50
60
70
80
90
100
20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - I
rr
(A)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S10 Series
T
J
= 125 °C, VR = 30 V
VS-SD203N/R Series
Vishay Semiconductors
Fig. 9 - Typical Forward Recovery Characteristics
Fig. 10 - Recovery Time Characteristics
Revision: 21-Nov-13
Fig. 11 - Recovery Charge Characteristics
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Fig. 12 - Recovery Current Characteristics
3.6
(μs)
rr
3.2
2.8
2.4
2
1.6
Maximum Reverse Recovery Time - t
SD203N/R..S15 Series
= 125 °C, VR = 30 V
T
J
I = 750 A
FM
Square Pulse
200 A
400 A
10010
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 13 - Recovery Time Characteristics
5
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50
60
70
80
90
100
110
120
130
140
150
160
170
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Q
rr
(μC)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S15 Series
T
J
= 125 °C, VR = 30 V
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - I
rr
(A)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S15 Series
T
J
= 125 °C, VR = 30 V
2.4
2.6
2.8
3
3.2
3.4
3.6
10010
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Maximum Reverse Recovery Time - trr (μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S20 Series
T
J
= 125 °C, VR = 30 V
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Q
rr
(μC)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S20 Series
T
J
= 125 °C, VR = 30 V
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Current - I
rr
(A)
Rate Of Fall Of Forward Current - diF/dt (A/μs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD203N/R..S20 Series
T
J
= 125 °C, VR = 30 V
VS-SD203N/R Series
Vishay Semiconductors
Fig. 14 - Recovery Charge Characteristics
Fig. 15 - Recovery Current Characteristics
Fig. 16 - Recovery Time Characteristics
Fig. 17 - Recovery Charge Characteristics
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Fig. 18 - Recovery Current Characteristics
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1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
4
2
0.1
0.2
0.4
0.02
0.04
Pulse Basewidth (μs)
20 joules per pulse
0.01
Peak Forward Current (A)
10
Sinusoidal Pulse
dv/dt = 1000 V/μs
SD203N/R..S10 Series
T
J
= 125 °C, V
RRM
= 1120 V
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
4
2
0.1
0.2
0.4
0.02
0.04
Pulse Basewidth (μs)
20 joules per pulse
0.01
Peak Forward Current (A)
10
t
p
Sinusoidal Pulse
dv/dt = 1000 V/μs
SD203N/R..S20 Series
T
J
= 125 °C, V
RRM
= 1760 V
VS-SD203N/R Series
Vishay Semiconductors
0.06
SD203N/R..S10 Series
Trapezoidal Pulse
T
t
p
1E1 1E2 1E3 1E4
Fig. 19 - Maximum Total Energy Loss Per Pulse Characteristics
= 125 °C, V
J
dv/dt = 1000 V/μs, di/dt = 50 A/μs
RRM
Pulse Basewidth (μs)
0.2
0.1
= 1120 V
0.4
10
4
2
1
20 joules per pulse
1E4
1E3
0.2
0.1
0.04
1E2
Peak Forward Current (A)
SD203N/R..S15 Series
Sinusoidal Pulse
= 125 °C, V
T
J
tp
1E1
1E1 1E2 1E3 1E4
dv/dt = 1000 V/μs
0.01
0.02
RRM
= 1120 V
Pulse Basewidth (μs)
Fig. 20 - Maximum Total Energy Loss Per Pulse Characteristics
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Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
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0.4
10
4
2
1
20 joules per pulse
20 joules per pulse
10
4
2
1
0.4
0.2
0.1
SD203N/R..S15 Series
Trapezoidal Pulse
tp
TJ = 125 °C, V
dv/dt = 1000 V/μs, di/dt = 50 A/μs
1E1 1E2 1E3 1E4
RRM
= 1120 V
Pulse Basewidth (μs)
20 joules per pulse
10
4
2
1
0.4
0.2
SD203N/R..S80 Series
Trapezoidal Pulse
TJ = 125 °C, V
tp
dv/dt = 1000 V/μs, di/dt = 50 A/μs
1E1 1E2 1E3 1E4
RRM
= 1760 V
Pulse Basewidth (μs)
7
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Device code
51 32 4 6 7 8 9 10
SDVS- 20 3 R 25 S20 P B C
2 - Diode
1 -
3 - Essential part number
4 - 3 = Fast recovery
5
- N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
6
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
7
-t
rr
code (see Recovery Characteristics table)
8 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M = Stud base DO-205AB (DO-9) M16 x 1.5
9
-7 B = Flag top terminals (for cathode/ anode leads)
S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
10
-
V = Glass-metal seal (only up to 1600 V)
C = Ceramic housing (over 1600 V)
Vishay Semiconductors product
ORDERING INFORMATION TABLE
VS-SD203N/R Series
Vishay Semiconductors
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95301
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DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
Ceramic housing
210 (8.27)
± 10 (0.39)
82 (3.23)
MIN.
DIA. 8.5 (0.33) NOM.
(1.08) MAX.
21 (0.82)
MAX.
9.5 (0.37) MIN.
DIA. 27.5
16 (0.63)
MAX.
19 (0.75)
MAX.
39 (1.53)
MAX.
C.S. 35 mm
(0.054 s.i.)
SW 32
4 (0.16)
MAX.
2
3/4"-16UNF-2A*
Document Number: 95301 For technical questions, contact: indmodules@vishay.com
Revision: 09-Apr-08 1
*For metric device: M16 x 1.5
contact factory
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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