Vishay VS-SD203N Series, VS-SD203R Series Data Sheet
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DO-205AB (DO-9)
PRODUCT SUMMARY
I
F(AV)
Package DO-205AB (DO-9)
Circuit configuration Single diode
Fast Recovery Diodes
(Stud Version) 200 A
FEATURES
• High power fast recovery diode series
• 1.0 μs to 2.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Compression bonded encapsulation
• Stud version JEDEC
• Maximum junction temperature 125 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
200 A
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
VS-SD203N/R Series
Vishay Semiconductors
®
DO-205AB (DO-9)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
t
rr
T
J
T
C
50 Hz 4990
60 Hz 5230
50 Hz 125
60 Hz 114
Range 400 to 2500 V
Range 1.0 to 2.0 μs
T
J
200 A
85 °C
314
25
-40 to +125
A
kA2s
°C
Revision: 21-Nov-13
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 93170
VS-SD203N/R Series
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD203N/R..S10
VS-SD203N/R..S15
VS-SD203N/R..S20
, MAXIMUM REPETITIVE
V
VOLTAGE
CODE
RRM
PEAK AND OFF-STATE VOLTAGE
V
04 400 500
08 800 900
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
20 2000 2100
25 2500 2600
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK VOLTAGE
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum RMS current I
Maximum peak, one-cycle
non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
f1
f2
FM
180° conduction, half sine wave
DC at 76 °C case temperature 314
t = 10 ms
t = 8.3 ms 5230
t = 10 ms
t = 8.3 ms 4400
t = 10 ms
t = 8.3 ms 114
t = 10 ms
t = 8.3 ms 81
(16.7 % x x I
T
= TJ maximum
J
(I > x I
(16.7 % x x I
T
= TJ maximum
J
(I > x I
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
reapplied
100 % V
reapplied
F(AV)
), TJ = TJ maximum 1.47
F(AV)
F(AV)
), TJ = TJ maximum 0.46
F(AV)
RRM
< I < x I
< I < x I
Ipk = 628 A, TJ = 25 °C, tp = 400 μs square pulse 1.65 V
Vishay Semiconductors
I
RRM
T
200 A
85 °C
4990
4200
125
88
1.00
1.10
F(AV)
F(AV)
V
J
),
),
= TJ maximum
MAXIMUM
= 125 °C
J
mA
35
A
kA2s
V
mW
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
= 25 °C
J
AT 25 % I
t
rr
RRM
(μs)
TEST CONDITIONS
I
pk
SQUARE
PULSE
dI/dt
(A/μs)
V
(V)
t
r
rr
(A)
S10 1.0
S15 1.5 2.9 90 44
750 25 - 30
S20 2.0 3.2 107 46
Revision: 21-Nov-13
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For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL VALUES
AT TJ = 125 °C
AT 25 % I
(μs)
RRM
Q
(μC)
rr
I
(A)
rr
2.4 52 33
Document Number: 93170
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I
FM
dir
dt
t
rr
t
Q
rr
I
RM(REC)
VS-SD203N/R Series
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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight 250 g
Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)
J
Stg
R
thJC
R
thCS
DC operation 0.115
Mounting surface, smooth, flat and greased 0.08
Not-lubricated threads 31
Lubricated threads 24.5
Vishay Semiconductors
-40 to +125
-40 to +150
°C
K/W
Nm
R
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.010 0.008
120° 0.013 0.014
90° 0.017 0.019
= TJ maximum K/W
T
J
60° 0.025 0.027
30° 0.044 0.044
Note
• The table above shows the increment of thermal resistance R
130
120
110
100
90
80
70
0 40 80 120 160 200 240
Maximum Allowable Case Temperature (°C)
SD203N/R Series
R (DC) = 0.115 K/W
thJC
Conduction Angle
30°
60°
90°
120°
180°
Average Forward Current (A)
when devices operate at different conduction angles than DC
thJC
130
120
110
100
90
80
70
Maximum Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350
SD203N/R Series
R (DC) = 0.115 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
Average Forward Current (A)
DC
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Revision: 21-Nov-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93170
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