Vishay VS-MURB820PbF, VS-MURB820-1PbF Data Sheet
V
VS-MURB820PbF, VS-MURB820-1PbF
Vishay High Power Products
S-MURB820PbF
Base
cathode
2
1
N/C
D2PAK
3
Anode
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
Ultrafast Rectifier, 8 A FRED Pt
FEATURES
VS-MURB820-1PbF
2
1
N/C
TO-262
3
Anode
25 ns
8 A
200 V
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
®
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
Average rectified forward current I
Peak repetitive forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
FM
Total device, rated VR, TC = 150 °C 8
Rated VR, square wave, 20 kHz, TC = 150 °C 16
Stg
200 V
100
- 65 to 175 °C
ANon-repetitive peak surge current I
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 94081 For technical questions, contact: diodestech@vishay.com
Revision: 11-Mar-10 1
,
V
BR
V
R
IR = 100 μA 200 - -
R
IF = 8 A - - 0.975
F
I
= 8 A, TJ = 150 °C - - 0.895
F
VR = VR rated - - 5
T
= 150 °C, VR = VR rated - - 250
J
VR = 200 V - 25 - pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
V
μA
www.vishay.com
VS-MURB820PbF, VS-MURB820-1PbF
Vishay High Power Products
Ultrafast Rectifier,
8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 0.5 A, IR = 1.0 A, I
I
F
T
= 25 °C
J
= 125 °C - 34 -
T
J
TJ = 25 °C - 1.7 -
T
= 125 °C - 4.2 -
J
TJ = 25 °C - 23 -
rr
T
= 125 °C - 75 -
J
= 0.25 A - - 25
REC
-20-
= 8 A
I
F
dI
/dt = 200 A/μs
F
= 160 V
V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
T
, T
J
Stg
--3.0
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and
greased
- 65 - 175 °C
--50
-0.5-
-2.0- g
-0.07- oz.
Case style D
6.0
(5.0)
2
PAK MURB820
-
12
(10)
Case style TO-262 MURB820-1
kgf · cm
(lbf · in)
ns
A
nC
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94081
2 Revision: 11-Mar-10
VS-MURB820PbF, VS-MURB820-1PbF
100
10
1
0.1
- Instantaneous Forward Current (A)
F
I
0 1.80.4 0.8
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.2 0.6 1.0 1.4 1.6
1.2
VF - Forward Voltage Drop (V)
Ultrafast Rectifier,
8 A FRED Pt
®
100
- Reverse Current (µA)
0.01
R
I
0.001
10
0.1
Vishay High Power Products
TJ = 175 °C
TJ = 150 °C
1
0 100 150
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
200 25050
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
100
- Junction Capacitance (pF)
T
C
10
1 10 100 1000
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
P
DM
D = 0.50
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
t
1
thJC
t
2
.
+ T
C
.
Document Number: 94081 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 11-Mar-10 3
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