Vishay VS-MB Series Data Sheet
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D-34
PRODUCT SUMMARY
I
O
V
RRM
Package D-34
Circuit Single Phase Bridge
Single Phase Bridge
(Power Modules), 25 A/35 A
FEATURES
• Universal, 3 way terminals:
Push-on, wrap around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• UL E300359 approved
• Nickel plated terminals solderable using lead (Pb)-free
solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder
temperature 260 °C to 275 °C
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
25 A to 35 A
200 V to 1200 V
DESCRIPTION
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
VS-MB Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS
I
O
I
FSM
2
I
V
T
t
RRM
J
T
C
50 Hz 400 475
60 Hz 420 500
50 Hz 790 1130
60 Hz 725 1030
Range 200 to 1200 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
26MB..A
36MB..A
VOLTAGE
CODE
20 200 275
40 400 500
60 600 725
80 800 900
100 1000 1100
120 1200 1300
VALUES
26MB-A
25 35 A
65 60 °C
, MAXIMUM
V
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VALUES
36MB-A
- 55 to 150 °C
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM
AT T
UNITS
A2s
MAXIMUM
MAXIMUM
J
A
2
Revision: 10-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93563
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Resistive or inductive load 25 35
Maximum DC output current
at case temperature
Maximum peak, one-cycle
non-repetitive forward current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2tI2t for time tx = I2xx0.1 tx 10 ms, V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level forward slope resistance r
High level forward slope resistance r
Maximum forward voltage drop V
Maximum DC reverse current I
RMS isolation voltage base plate V
I
I
FSM
F(TO)1
F(TO)2
RRM
Capacitive load 20 28
O
t = 10 ms
t = 8.3 ms 420 500
t = 10 ms
t = 8.3 ms 350 420
t = 10 ms
t = 8.3 ms 725 1030
t = 10 ms
t = 8.3 ms 512 730
(16.7 % x x I
(I > x I
(16.7 % x x I
t1
(I > x I
t2
TJ = 25 °C, IFM = 40 Apk (26MB)
FM
T
= 25 °C, IFM = 55 Apk (36MB)
J
TJ = 25 °C, per diode at V
f = 50 Hz, t = 1 s 2700 V
INS
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Initial
T
= TJ maximum
J
reapplied
100 % V
reapplied
F(AV)
), TJ maximum 0.92 0.96
F(AV)
F(AV)
), TJ maximum 5.0 4.5
F(AV)
RRM
< I < x I
< I < x I
RRM
= 0 V 5.6 11.3 kA2s
RRM
), TJ maximum 0.76 0.79
F(AV)
), TJ maximum 6.8 5.8
F(AV)
t
= 400 μs 1.11 1.14 V
p
VALUES
26MB-A
VS-MB Series
VALUES
36MB-A
65 60 °C
400 475
335 400
790 1130
560 800
10 μA
UNITS
A2s
m
A
A
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Junction and storage temperature
range
Maximum thermal resistance
junction to case per bridge
Maximum thermal resistance,
case to heatsink
T
, T
J
Stg
R
thJC
R
thCS
Mounting surface, smooth, flat and greased 0.2
VALUES
26MB-A
1.7 1.2
Approximate weight 20 g
Mounting torque ± 10 % Bridge to heatsink 2.0 Nm
Revision: 10-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VALUES
36MB-A
- 55 to 150 °C
Document Number: 93563
UNITS
K/W
www.vishay.com
Average Forward Current (A)
Maximum Allowable Case temperature (°C)
50
70
90
110
130
150
0 5 10 15 20 25 30
180°
(Rect)
180°
(Sine)
26MB..A Series
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
0
10
20
30
40
50
0 5 10 15 20 25
180°
(Sine)
26MB..A Series
T
J
= 150 °C
180°
(Rect)
Maximum Average Forward Power Loss (W)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
100
150
200
250
300
350
400
110100
26MB..A Series
At Any Rated Load Condition And With
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Rated V
RRM
Applied Following Surge
VS-MB Series
Vishay Semiconductors
1000
Tj = 25 °C
Tj = 150 °C
100
10
Instantaneous Forward Current (A)
1
0.5 1 1.5 2 2.5 3 3.5
Instantaneous Forward Voltage (V)
26MB..A Series
Fig. 1 - Current Ratings Characteristics Fig. 2 - Forward Voltage Drop Characteristics
Maximum Allowable Ambient Temperature
RthSA = 1 K/W - Δ R
2 K/W
3 K/W
4 K/W
5 K/W
7 K/W
10 K/W
0 25 50 75 100 125 150
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 10-Jul-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
450
350
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 150 °C
No Voltage Reapplied
Rated V
Reapplied
RRM
250
150
26MB..A Series
50
Peak Half Sine Wave Forward Current (A)
0.01 0.1 1
3
Pulse Train Duration (s)
Document Number: 93563
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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