VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
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FEATURES |
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• Small foot print, surface mountable |
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• Low forward voltage drop |
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• High frequency operation |
Cathode |
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Anode |
• Guard ring for enhanced ruggedness and long |
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term reliability |
SMB
PRODUCT SUMMARY
Package |
DO-214AA (SMB) |
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IF(AV) |
1 A |
VR |
90 V, 100 V |
VF at IF |
0.78 V |
IRM |
1 mA at 125 °C |
TJ max. |
175 °C |
Diode variation |
Single die |
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EAS |
1.0 mJ |
•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
•Compliant to RoHS directive 2002/95/EC
•Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS |
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SYMBOL |
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CHARACTERISTICS |
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VALUES |
UNITS |
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IF(AV) |
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Rectangular waveform |
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1.0 |
A |
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VRRM |
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90/100 |
V |
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IFSM |
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tp = 5 μs sine |
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870 |
A |
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VF |
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1.0 Apk, TJ = 125 °C |
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0.63 |
V |
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TJ |
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Range |
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- 55 to 175 |
°C |
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VOLTAGE RATINGS |
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PARAMETER |
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SYMBOL |
VS-MBRS190TRPbF |
VS-MBRS1100TRPbF |
UNITS |
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Maximum DC reverse voltage |
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VR |
90 |
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100 |
V |
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Maximum working peak reverse voltage |
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VRWM |
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
VALUES |
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Maximum average forward current |
IF(AV) |
50 % duty cycle at TL = 147 °C, rectangular waveform |
1.0 |
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Maximum peak one cycle |
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5 μs sine or 3 μs rect. pulse |
Following any rated load |
870 |
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A |
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IFSM |
condition and with rated |
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non-repetitive surge current |
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10 ms sine or 6 ms rect. pulse |
50 |
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VRRM applied |
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Non-repetitive avalanche energy |
EAS |
TJ = 25 °C, IAS = 0.5 A, L = 8 mH |
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1.0 |
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mJ |
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Repetitive avalanche current |
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IAR |
Current decaying linearly to zero in 1 μs |
0.5 |
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A |
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Frequency limited by TJ maximum VA = 1.5 x VR typical |
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Document Number: 94315 |
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For technical questions within your region, please contact one of the following: |
www.vishay.com |
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Revision: 05-Jul-10 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
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1 |
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors |
Schottky Rectifier, 1.0 A |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum forward voltage drop |
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VFM (1) |
1 A |
TJ = 25 °C |
0.78 |
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V |
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See fig. 1 |
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TJ = 125 °C |
0.62 |
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Maximum reverse leakage current |
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IRM (1) |
TJ = 25 °C |
VR = Rated VR |
0.5 |
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mA |
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See fig. 2 |
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TJ = 125 °C |
1.0 |
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Typical junction capacitance |
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CT |
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C |
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pF |
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Typical series inductance |
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LS |
Measured lead to lead 5 mm from package body |
2.0 |
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nH |
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Maximum voltage rate of change |
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dV/dt |
Rated VR |
10 000 |
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V/μs |
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Note |
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(1) |
Pulse width < 300 μs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
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TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum junction and storage |
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TJ (1), TStg |
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- 55 to 175 |
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°C |
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temperature range |
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Maximum thermal resistance, |
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RthJL (2) |
DC operation |
36 |
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junction to lead |
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See fig. 4 |
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°C/W |
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Maximum thermal resistance, |
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RthJA |
DC operation |
80 |
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junction to ambient |
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Approximate weight |
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0.10 |
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g |
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0.003 |
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oz. |
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Marking device |
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Case style SMB (similar to DO-214AA) |
V19/V10 |
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Notes |
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(1) |
dPtot |
1 |
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------------- < -------------- thermal runaway condition for a diode on its own heatsink |
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dTJ |
RthJA |
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(2) |
Mounted 1" square PCB |
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www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 94315 |
2 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 05-Jul-10 |
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A |
Vishay Semiconductors |
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10 |
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<![if ! IE]> <![endif]>Current(A) |
TJ = 175 °C |
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<![if ! IE]> <![endif]>Instantaneous |
TJ = 125 °C |
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TJ |
= 25 °C |
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<![if ! IE]> <![endif]>Forward |
1 |
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<![if ! IE]> <![endif]>I |
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<![if ! IE]> <![endif]>- |
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<![if ! IE]> <![endif]>F |
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0.1 |
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0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
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VFM - Forward Voltage Drop (V) |
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Fig. 1 - Maximum Forward Voltage Drop Characteristics |
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100 |
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<![if ! IE]> <![endif]>Capacitance (pF) |
TJ = 25 °C |
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<![if ! IE]> <![endif]>- Junction |
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<![if ! IE]> <![endif]>T |
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<![if ! IE]> <![endif]>C |
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10 |
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0 |
20 |
40 |
<![endif]>IR - Reverse Current (mA)
10 |
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1 |
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TJ = 175 °C |
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0.1 |
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TJ = 125 °C |
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0.01 |
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TJ = 75 °C |
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0.001 |
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0.0001 |
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0.00001 |
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0 |
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TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
TJ = 25 °C
40 |
60 |
80 |
100 |
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
60 80 100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![if ! IE]> <![endif]>(°C/W) |
100 |
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<![if ! IE]> <![endif]>Impedance |
10 |
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PDM |
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t1 |
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<![if ! IE]> <![endif]>Thermal |
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D = 0.75 |
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t2 |
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D = 0.50 |
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1 |
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D = 0.33 |
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Notes: |
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Single pulse |
D = 0.25 |
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1. Duty factor D = t1/t2 |
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<![if ! IE]> <![endif]>- |
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D = 0.20 |
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2. Peak TJ = PDM x ZthJC + TC |
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<![if ! IE]> <![endif]>thJC |
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(thermal resistance) |
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<![if ! IE]> <![endif]>Z |
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0.1 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
10 |
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t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Document Number: 94315 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 05-Jul-10 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
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