Vishay VS-MBRS190TRPbF, VS-MBRS1100TRPbF Data Sheet

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Vishay Semiconductors

Schottky Rectifier, 1.0 A

					FEATURES
					• Small foot print, surface mountable
					• Low forward voltage drop
					• High frequency operation
Cathode			Anode		• Guard ring for enhanced ruggedness and long
					term reliability

SMB

PRODUCT SUMMARY

Package	DO-214AA (SMB)
IF(AV)	1 A
VR	90 V, 100 V
VF at IF	0.78 V
IRM	1 mA at 125 °C
TJ max.	175 °C
Diode variation	Single die
EAS	1.0 mJ

•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

•Compliant to RoHS directive 2002/95/EC

•Designed and qualified for industrial level

DESCRIPTION

The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

1.0

A

VRRM

90/100

V

IFSM

tp = 5 μs sine

870

A

VF

1.0 Apk, TJ = 125 °C

0.63

V

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

VS-MBRS190TRPbF

VS-MBRS1100TRPbF

UNITS

Maximum DC reverse voltage

VR

90

100

V

Maximum working peak reverse voltage

VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

50 % duty cycle at TL = 147 °C, rectangular waveform

1.0

Maximum peak one cycle

5 μs sine or 3 μs rect. pulse

Following any rated load

870

A

IFSM

condition and with rated

non-repetitive surge current

10 ms sine or 6 ms rect. pulse

50

VRRM applied

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 0.5 A, L = 8 mH

1.0

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 μs

0.5

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 94315

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 05-Jul-10

[e-mail], [e-mail], [e-mail]

1

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Vishay Semiconductors				Schottky Rectifier, 1.0 A
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
	Maximum forward voltage drop			VFM (1)	1 A	TJ = 25 °C	0.78		V
	See fig. 1					TJ = 125 °C	0.62
	Maximum reverse leakage current			IRM (1)	TJ = 25 °C	VR = Rated VR	0.5		mA
	See fig. 2				TJ = 125 °C		1.0
	Typical junction capacitance			CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		42		pF
	Typical series inductance			LS	Measured lead to lead 5 mm from package body		2.0		nH
	Maximum voltage rate of change			dV/dt	Rated VR		10 000		V/μs
Note
(1)	Pulse width < 300 μs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL	TEST CONDITIONS		VALUES		UNITS
	Maximum junction and storage			TJ (1), TStg			- 55 to 175		°C
	temperature range
	Maximum thermal resistance,			RthJL (2)	DC operation		36
	junction to lead				See fig. 4
									°C/W
	Maximum thermal resistance,			RthJA	DC operation		80
	junction to ambient
	Approximate weight						0.10		g
							0.003		oz.
	Marking device				Case style SMB (similar to DO-214AA)		V19/V10
Notes
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA
(2)	Mounted 1" square PCB

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94315
2	[e-mail], [e-mail], [e-mail]	Revision: 05-Jul-10

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Schottky Rectifier, 1.0 A

Vishay Semiconductors

		10
	<![if ! IE]> <![endif]>Current(A)	TJ = 175 °C
<![if ! IE]> <![endif]>Instantaneous		TJ = 125 °C
		TJ	= 25 °C
	<![if ! IE]> <![endif]>Forward	1
<![if ! IE]> <![endif]>I
<![if ! IE]> <![endif]>-
<![if ! IE]> <![endif]>F
		0.1
		0.2	0.4	0.6	0.8	1.0
		VFM - Forward Voltage Drop (V)
		Fig. 1 - Maximum Forward Voltage Drop Characteristics
					100
					<![if ! IE]> <![endif]>Capacitance (pF)	TJ = 25 °C
					<![if ! IE]> <![endif]>- Junction
					<![if ! IE]> <![endif]>T
					<![if ! IE]> <![endif]>C
					10
					0	20	40

<![if ! IE]>

<![endif]>IR - Reverse Current (mA)

10
1					TJ = 175 °C
0.1					TJ = 125 °C
0.01
					TJ = 75 °C
0.001
0.0001
0.00001
0			20

TJ = 150 °C

TJ = 100 °C

TJ = 50 °C

TJ = 25 °C

40

60

80

100

VR - Reverse Voltage (V)

Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage

60 80 100

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	100
<![if ! IE]> <![endif]>Impedance	10						PDM
							t1
<![if ! IE]> <![endif]>Thermal				D = 0.75			t2
				D = 0.50
	1
				D = 0.33		Notes:
			Single pulse	D = 0.25		1. Duty factor D = t1/t2
<![if ! IE]> <![endif]>-				D = 0.20
						2. Peak TJ = PDM x ZthJC + TC
<![if ! IE]> <![endif]>thJC
		(thermal resistance)						.
<![if ! IE]> <![endif]>Z
	0.1
	0.00001	0.0001	0.001	0.01	0.1	1	10	100

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)

Document Number: 94315	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 05-Jul-10	[e-mail], [e-mail], [e-mail]	3