Vishay VS-MBRS190TRPbF, VS-MBRS1100TRPbF Data Sheet

SMB

PRODUCT SUMMARY

Package DO-214AA (SMB)

I

F(AV)

V

R

V

at I

F

F

I

RM

T

max. 175 °C

J

Diode variation Single die

E

AS

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Schottky Rectifier, 1.0 A

FEATURES

• Small foot print, surface mountable

• Low forward voltage drop

• High frequency operation

Cathode

1 A

90 V, 100 V

0.78 V

1 mA at 125 °C

1.0 mJ

Anode

• Guard ring for enhanced ruggedness and long
term reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

DESCRIPTION

The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 1.0 A

90/100 V

tp = 5 μs sine 870 A

1.0 Apk, TJ = 125 °C 0.63 V

Range - 55 to 175 °C

VOLTAGE RATINGS

PARAMETER SYMBOL VS-MBRS190TRPbF VS-MBRS1100TRPbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

90 100 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

I

FSM

AR

50 % duty cycle at TL = 147 °C, rectangular waveform 1.0

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse 50

TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ

AS

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

870

0.5 A

A

Document Number: 94315 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jul-10 [e-mail]

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dP

tot

dT

J

-------------

1

R

thJA

--------------<

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Vishay Semiconductors

Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= 25 °C 0.78

T

Maximum forward voltage drop
See fig. 1

Maximum reverse leakage current
See fig. 2

Typical junction capacitance C

Typical series inductance L

(1)

V

FM

I

RM

S

1 A

TJ = 25 °C

(1)

T

= 125 °C 1.0

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 42 pF

T

Measured lead to lead 5 mm from package body 2.0 nH

Maximum voltage rate of change dV/dt Rated V

R

J

T

= 125 °C 0.62

J

V

= Rated V

R

R

0.5

10 000 V/μs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to lead

Maximum thermal resistance,
junction to ambient

Approximate weight

Marking device Case style SMB (similar to DO-214AA) V19/V10

Notes

(1)

thermal runaway condition for a diode on its own heatsink

(1)

T

, T

J

Stg

DC operation

(2)

R

thJL

R

thJA

See fig. 4

DC operation 80

- 55 to 175 °C

36

0.10 g

0.003 oz.

V

mA

°C/W

(2)

Mounted 1" square PCB

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0.00001

0.0001

0.001

1

10

0.1

0.01

I

R

- Reverse Current (mA)

V

R

- Reverse Voltage (V)

20 40

80

100

60

0

TJ = 175 °C

TJ = 150 °C

TJ = 125 °C

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

0.1

1

100

10

0.00001 0.0001 0.001 0.01 0.1 1

t1 - Rectangular Pulse Duration (s)

Z

thJC

- Thermal Impedance (°C/W)

100 10

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

.

P

DM

t

1

t

2

Notes:

1. Duty factor D = t

1/t2

2. Peak TJ = PDM x Z

thJC

+ T

C

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

10

TJ = 175 °C

= 125 °C

T

J

= 25 °C

T

J

1

- Instantaneous

F

I

Forward Current (A)

0.1

0.2

V

0.4 0.6 0.8

- Forward Voltage Drop (V)

FM

Schottky Rectifier, 1.0 A

1.0

Vishay Semiconductors

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs.

Reverse Voltage

100

TJ = 25 °C

- Junction Capacitance (pF)

T

C

10

0

4020 60 80

V

- Reverse Voltage (V)

R

100

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

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Revision: 05-Jul-10 [e-mail]

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

, [e-mail], [e-mail] 3

110

120

130

140

150

160

170

180

Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

0.80.4 1.2

1.6

0

DC

Square wave (D = 0.50)
Rated V

R

applied

See note (1)

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

0

0.2

0.6

0.8

0.4

1.0

Average Power Loss (W)

I

F(AV)

- Average Forward Current (A)

0.3

1.50.6 0.9 1.2

0

DC

RMS limit

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Vishay Semiconductors

Fig. 5 - Maximum Average Forward Current vs.

Allowable Lead Temperature

Schottky Rectifier, 1.0 A

Fig. 6 - Maximum Average Forward Dissipation vs.

Average Forward Current

1000

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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100

At any rated load condition
and with rated V
following surge

- Non-Repetitive Surge Current (A)

10

FSM

I

10

applied

RRM

100 1000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration

) x R

REV

x VFM at (I

F(AV)

;

thJC

/D) (see fig. 6);

F(AV)

R

, [e-mail], [e-mail] Revision: 05-Jul-10

10 000

90 = 90 V

100 = 100 V

2 - Schottky MBR series

3 - S = SMB

4 - Current rating (1 = 1 A)

5 - Voltage rating

6 - TR = Tape and reel (3000 pieces)

- PbF = Lead (Pb)-free

7

Device code

51

32 4

6 7

VS- MBR S 1 100 TR PbF

1 - Vishay Semiconductors product suffix

VS-MBRS190TRPbF, VS-MBRS1100TRPbF

Schottky Rectifier, 1.0 A

Vishay Semiconductors

ORDERING INFORMATION TABLE

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95017

Part marking information www.vishay.com/doc?95029

Packaging information www.vishay.com/doc?95034

Document Number: 94315 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jul-10 [e-mail]

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DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

SMB

2.15 (0.085)

1.80 (0.071)

2.40 (0.094)

1.90 (0.075)

1.30 (0.051)

0.76 (0.030)

4.70 (0.185)

4.10 (0.161)

5.60 (0.220)

5.00 (0.197)

3.80 (0.150)

3.30 (0.130)

0.30 (0.012)

0.15 (0.006)

1

Polarity Part Number

1

2.5 TYP.

(0.098 TYP.)

2.0 TYP.

(0.079 TYP.)

2

2

Soldering pad

4.2 (0.165)

4.0 (0.157)

Document Number: 95017 For technical questions concerning discrete products, contact: [e-mail]
Revision: 25-Jun-07 For technical questions concerning module products, contact: [e-mail]

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Revision: 11-Mar-11 1