Vishay VS-MBRS190TRPbF, VS-MBRS1100TRPbF Data Sheet
SMB
PRODUCT SUMMARY
Package DO-214AA (SMB)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 175 °C
J
Diode variation Single die
E
AS
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Schottky Rectifier, 1.0 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
Cathode
1 A
90 V, 100 V
0.78 V
1 mA at 125 °C
1.0 mJ
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRS190TRPbF, VS-MBRS1100TRPbF surface
mount Schottky rectifier has been designed for applications
requiring low forward drop and very small foot prints on PC
boards. Typical applications are in disk drives, switching
power supplies, converters, freewheeling diodes, battery
charging, and reverse battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
90/100 V
tp = 5 μs sine 870 A
1.0 Apk, TJ = 125 °C 0.63 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS190TRPbF VS-MBRS1100TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
90 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 147 °C, rectangular waveform 1.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 50
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
870
0.5 A
A
Document Number: 94315 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
Vishay Semiconductors
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= 25 °C 0.78
T
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Typical junction capacitance C
Typical series inductance L
(1)
V
FM
I
RM
S
1 A
TJ = 25 °C
(1)
T
= 125 °C 1.0
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 42 pF
T
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
J
T
= 125 °C 0.62
J
V
= Rated V
R
R
0.5
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (similar to DO-214AA) V19/V10
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
DC operation
(2)
R
thJL
R
thJA
See fig. 4
DC operation 80
- 55 to 175 °C
36
0.10 g
0.003 oz.
V
mA
°C/W
(2)
Mounted 1" square PCB
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94315
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 05-Jul-10
0.00001
0.0001
0.001
1
10
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 40
80
100
60
0
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.1
1
100
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
100 10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-MBRS190TRPbF, VS-MBRS1100TRPbF
10
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
1
- Instantaneous
F
I
Forward Current (A)
0.1
0.2
V
0.4 0.6 0.8
- Forward Voltage Drop (V)
FM
Schottky Rectifier, 1.0 A
1.0
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0
4020 60 80
V
- Reverse Voltage (V)
R
100
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94315 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 05-Jul-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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