Vishay VS-MBRD650CTPbF, VS-MBRD660CTPbF Data Sheet
D-PAK (TO-252AA)
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Schottky Rectifier, 2 x 3 A
Vishay Semiconductors
Base
common
cathode
4
FEATURES
• Popular D-PAK outline
• Center tap configuration
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD650CTPbF, VS-MBRD660CTPbF surface
mount, center tap, Schottky rectifier series has been
designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in
disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
Anode Anode
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
max. 150 °C
T
J
Diode variation Common cathode
E
AS
15 mA at 125 °C
2
Common
cathode
13
2 x 3 A
50 V, 60 V
0.65 V
6 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 6 A
50/60 V
tp = 5 μs sine 490 A
3 Apk, TJ = 125 °C (per leg) 0.65 V
Range - 40 to 150 °C
Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD650CTPbF VS-MBRD660CTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
50 60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 6
I
F(AV)
I
FSM
50 % duty cycle at TC = 128 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 75
TJ = 25 °C, IAS = 1 A, L = 12 mH 6 mJ
AS
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
490
3.0
A
0.6 A
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Vishay Semiconductors
Schottky Rectifier, 2 x 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
6 A 0.9
(1)
3 A
6 A 0.85
Maximum reverse leakage current per leg
See fig. 2
I
RM
Typical junction capacitance per leg C
Typical series inductance per leg L
S
TJ = 25 °C
(1)
T
= 125 °C 15
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 145 pF
T
Measured lead to lead 5 mm from package body 5.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.7
0.65
0.1
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
per leg
per device 3
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA)
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
R
thJC
R
thJA
DC operation
See fig. 4
- 40 to 150 °C
6
80
0.3 g
0.01 oz.
MBRD650CT
MBRD660CT
V
mA
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94314
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
0.1
1
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.6 0.8 1.0 1.2 1.4 1.60.2
TJ = 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
VS-MBRD650CTPbF, VS-MBRD660CTPbF
Schottky Rectifier, 2 x 3 A
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
100
TJ = 150 °C
10
1
0.1
- Reverse Current (mA)
0.01
R
I
0.001
0
= 125 °C
T
J
T
J
T
J
T
T
10
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Vishay Semiconductors
= 100 °C
= 75 °C
= 50 °C
J
= 25 °C
J
20
30
50
40
60
100
- Junction Capacitance (pF)
T
C
10
0
10
TJ = 25 °C
20
30
V
- Reverse Voltage (V)
R
40
60
50
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Document Number: 94314 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
thJC
Characteristics (Per Leg)
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