Vishay VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Data Sheet

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Vishay Semiconductors

Schottky Rectifier, 3.0 A

Base cathode

4, 2

D-PAK (TO-252AA)	1	3
	Anode	Anode

PRODUCT SUMMARY

Package	D-PAK (TO-252AA)
IF(AV)	3.0 A
VR	20 V, 30 V, 40 V
VF at IF	0.49 V
IRM	20 mA at 125 °C
TJ max.	150 °C
Diode variation	Single die
EAS	8 mJ

FEATURES

• Popular D-PAK outline

• Small foot print, surface mountable

•Low forward voltage drop

•High frequency operation

•Guard ring for enhanced ruggedness and long term reliability

•Compliant to RoHS Directive 2002/95/EC

•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

DESCRIPTION

The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	3.0	A
VRRM		20 to 40	V
IFSM	tp = 5 μs sine	490	A
VF	3 Apk, TJ = 125 °C	0.49	V
TJ		- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	VS-MBRD320PbF	VS-MBRD330PbF	VS-MBRD340PbF	UNITS
	Maximum DC reverse voltage	VR	20	30	40	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TL = 133 °C, rectangular waveform		3.0
	Maximum peak one cycle		5 μs sine or 3 μs rect. pulse	Following any rated load	490	A
		IFSM		condition and with rated
	non-repetitive surge current		10 ms sine or 6 ms rect. pulse		75
				VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1 A, L = 16 mH		8.0	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 μs		1.0	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 94313	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 14-Jan-11	[e-mail], [e-mail], [e-mail]	1

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Vishay Semiconductors				Schottky Rectifier, 3.0 A
	ELECTRICAL SPECIFICATIONS
	PARAMETER		SYMBOL	TEST CONDITIONS		TYP.	MAX.			UNITS
				3 A	TJ = 25 °C	0.48	0.6
	Maximum forward voltage drop		VFM (1)	6 A		0.58	0.7			V
	See fig. 1			3 A	TJ = 125 °C	0.41	0.49
				6 A		0.55	0.625
	Maximum reverse leakage current		IRM (1)	TJ = 25 °C	VR = Rated VR	0.02	0.2			mA
	See fig. 2			TJ = 125 °C		10.7	20
	Typical junction capacitance		CT	VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C		189	-			pF
	Typical series inductance		LS	Measured lead to lead 5 mm from package body		5.0	-			nH
	Maximum voltage rate of change		dV/dt	Rated VR		-	10 000			V/μs
Note
(1)	Pulse width < 300 μs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER		SYMBOL	TEST CONDITIONS		VALUES			UNITS
	Maximum junction temperature range		TJ (1)			- 40 to 150				°C
	Maximum storage temperature range		TStg			- 40 to 175
	Maximum thermal resistance,		RthJC	DC operation		6.0
	junction to case			See fig. 4
										°C/W
	Maximum thermal resistance,		RthJA			80
	junction to ambient
	Approximate weight					0.3				g
						0.01				oz.
							MBRD320
	Marking device			Case style D-PAK (similar to TO-252AA)			MBRD330
							MBRD340
Note
(1)	dPtot	1
	-------------	< -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA

www.vishay.com	For technical questions within your region, please contact one of the following:	Document Number: 94313
2	[e-mail], [e-mail], [e-mail]	Revision: 14-Jan-11

VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF

Schottky Rectifier, 3.0 A

Vishay Semiconductors

<![if ! IE]> <![endif]>Current(A)	100
							<![if ! IE]> <![endif]>(mA)
<![if ! IE]> <![endif]>Forward	10						<![if ! IE]> <![endif]>CurrentReverse
					TJ = 150 °C
<![if ! IE]> <![endif]>Instantaneous					TJ = 125 °C		<![if ! IE]> <![endif]>I
	1				TJ	= 25 °C
							<![if ! IE]> <![endif]>-
							<![if ! IE]> <![endif]>R
<![if ! IE]> <![endif]>-	0.1
<![if ! IE]> <![endif]>F	0	0.2	0.4	0.6	0.8	1.0	1.2
<![if ! IE]> <![endif]>I
		VFM - Forward Voltage Drop (V)
	Fig. 1 - Maximum Forward Voltage Drop Characteristics

100
10			TJ =		150	°C
1			TJ = 125			°C
			TJ	= 100		°C
0.1			TJ = 75 °C
0.01			TJ = 50 °C
0.001			TJ = 25 °C
0		5		10		15							20		25		30		35		40

VR - Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage

<![if ! IE]>

<![endif]>CT - Junction Capacitance (pF)

1000

TJ = 25 °C

100

10

0

5

10

15

20

25

30

35

40

45

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

<![if ! IE]> <![endif]>(°C/W)	10
<![if ! IE]> <![endif]>Impedance					PDM
	1
					t1
<![if ! IE]> <![endif]>Thermal
			D = 0.75		t2
			D = 0.50
			D = 0.33		Notes:
<![if ! IE]> <![endif]>-		Single pulse	D = 0.25		1. Duty factor D = t1/t2
<![if ! IE]> <![endif]>thJC
		(thermal resistance)	D = 0.20		2. Peak TJ = PDM x ZthJC + TC
<![if ! IE]> <![endif]>Z	0.1
	0.00001	0.0001	0.001	0.01	0.1	1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

Document Number: 94313	For technical questions within your region, please contact one of the following:	www.vishay.com
Revision: 14-Jan-11	[e-mail], [e-mail], [e-mail]	3