VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Base cathode
4, 2 |
D-PAK (TO-252AA) |
1 |
3 |
Anode |
Anode |
PRODUCT SUMMARY
Package |
D-PAK (TO-252AA) |
|
|
IF(AV) |
3.0 A |
VR |
20 V, 30 V, 40 V |
VF at IF |
0.49 V |
IRM |
20 mA at 125 °C |
TJ max. |
150 °C |
Diode variation |
Single die |
|
|
EAS |
8 mJ |
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
•Low forward voltage drop
•High frequency operation
•Guard ring for enhanced ruggedness and long term reliability
•Compliant to RoHS Directive 2002/95/EC
•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
|
|
|
|
IF(AV) |
Rectangular waveform |
3.0 |
A |
VRRM |
|
20 to 40 |
V |
IFSM |
tp = 5 μs sine |
490 |
A |
VF |
3 Apk, TJ = 125 °C |
0.49 |
V |
TJ |
|
- 40 to 150 |
°C |
VOLTAGE RATINGS
PARAMETER |
SYMBOL |
VS-MBRD320PbF |
VS-MBRD330PbF |
VS-MBRD340PbF |
UNITS |
|
|
|
|
|
|
|
|
Maximum DC reverse voltage |
VR |
20 |
30 |
40 |
V |
|
Maximum working peak reverse voltage |
VRWM |
|||||
|
|
|
|
ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
||
|
|
|
|
|
||
Maximum average forward current |
IF(AV) |
50 % duty cycle at TL = 133 °C, rectangular waveform |
3.0 |
|
||
Maximum peak one cycle |
|
5 μs sine or 3 μs rect. pulse |
Following any rated load |
490 |
A |
|
IFSM |
condition and with rated |
|||||
non-repetitive surge current |
10 ms sine or 6 ms rect. pulse |
75 |
|
|||
|
VRRM applied |
|
||||
|
|
|
||||
Non-repetitive avalanche energy |
EAS |
TJ = 25 °C, IAS = 1 A, L = 16 mH |
|
8.0 |
mJ |
|
Repetitive avalanche current |
IAR |
Current decaying linearly to zero in 1 μs |
1.0 |
A |
||
Frequency limited by TJ maximum VA = 1.5 x VR typical |
||||||
|
|
|
|
Document Number: 94313 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 14-Jan-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
1 |
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors |
Schottky Rectifier, 3.0 A |
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
ELECTRICAL SPECIFICATIONS |
|
|
|
|
|
|
|
||
|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
TYP. |
MAX. |
|
UNITS |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3 A |
TJ = 25 °C |
0.48 |
0.6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Maximum forward voltage drop |
VFM (1) |
6 A |
0.58 |
0.7 |
|
V |
|||
|
|
|
||||||||
|
See fig. 1 |
3 A |
TJ = 125 °C |
0.41 |
0.49 |
|
||||
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
6 A |
0.55 |
0.625 |
|
|
||
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
Maximum reverse leakage current |
IRM (1) |
TJ = 25 °C |
VR = Rated VR |
0.02 |
0.2 |
|
mA |
||
|
See fig. 2 |
TJ = 125 °C |
10.7 |
20 |
|
|||||
|
|
|
|
|
||||||
|
Typical junction capacitance |
CT |
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C |
189 |
- |
|
pF |
|||
|
Typical series inductance |
LS |
Measured lead to lead 5 mm from package body |
5.0 |
- |
|
nH |
|||
|
Maximum voltage rate of change |
dV/dt |
Rated VR |
- |
10 000 |
|
V/μs |
|||
Note |
|
|
|
|
|
|
|
|
|
|
(1) |
Pulse width < 300 μs, duty cycle < 2 % |
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL - MECHANICAL SPECIFICATIONS |
|
|
|
|
|
||||
|
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
|
UNITS |
||||
|
|
|
|
|
|
|
|
|
||
|
Maximum junction temperature range |
TJ (1) |
|
|
- 40 to 150 |
|
|
°C |
||
|
Maximum storage temperature range |
TStg |
|
|
- 40 to 175 |
|
|
|||
|
|
|
|
|
|
|||||
|
Maximum thermal resistance, |
RthJC |
DC operation |
6.0 |
|
|
|
|
||
|
junction to case |
See fig. 4 |
|
|
|
|
||||
|
|
|
|
|
|
°C/W |
||||
|
|
|
|
|
|
|
|
|
|
|
|
Maximum thermal resistance, |
RthJA |
|
|
80 |
|
|
|
||
|
|
|
|
|
|
|
||||
|
junction to ambient |
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
Approximate weight |
|
|
|
0.3 |
|
|
|
g |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
0.01 |
|
|
|
oz. |
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
MBRD320 |
|||
|
|
|
|
|
|
|||||
|
Marking device |
|
Case style D-PAK (similar to TO-252AA) |
|
MBRD330 |
|||||
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
MBRD340 |
|||
|
|
|
|
|
|
|
|
|
|
|
Note |
|
|
|
|
|
|
|
|
|
|
(1) |
dPtot |
1 |
|
|
|
|
|
|
|
|
------------- |
< -------------- thermal runaway condition for a diode on its own heatsink |
|
|
|
|
|
||||
|
dTJ |
RthJA |
|
|
|
|
|
|
|
|
www.vishay.com |
For technical questions within your region, please contact one of the following: |
Document Number: 94313 |
2 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
Revision: 14-Jan-11 |
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A |
Vishay Semiconductors |
<![if ! IE]> <![endif]>Current(A) |
100 |
|
|
|
|
|
|
|
|
|
|
|
|
<![if ! IE]> <![endif]>(mA) |
|
<![if ! IE]> <![endif]>Forward |
10 |
|
|
|
|
|
<![if ! IE]> <![endif]>CurrentReverse |
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 150 °C |
|
|
<![if ! IE]> <![endif]>Instantaneous |
|
|
|
|
TJ = 125 °C |
<![if ! IE]> <![endif]>I |
|
1 |
|
|
|
TJ |
= 25 °C |
||
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
<![if ! IE]> <![endif]>- |
|
|
|
|
|
|
|
<![if ! IE]> <![endif]>R |
<![if ! IE]> <![endif]>- |
0.1 |
|
|
|
|
|
|
<![if ! IE]> <![endif]>F |
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
<![if ! IE]> <![endif]>I |
|||||||
|
|
VFM - Forward Voltage Drop (V) |
|
||||
|
Fig. 1 - Maximum Forward Voltage Drop Characteristics |
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
|
|
TJ = |
150 |
°C |
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
1 |
|
|
TJ = 125 |
°C |
|
|
|
|
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ |
= 100 |
°C |
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
TJ = 75 °C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
0.01 |
|
|
TJ = 50 °C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
0.001 |
|
|
TJ = 25 °C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
5 |
|
10 |
15 |
20 |
25 |
30 |
35 |
40 |
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
<![endif]>CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
10
0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
<![if ! IE]> <![endif]>(°C/W) |
10 |
|
|
|
|
|
|
|
|
|
|
|
|
<![if ! IE]> <![endif]>Impedance |
|
|
|
|
PDM |
|
1 |
|
|
|
|
|
|
|
|
|
|
t1 |
|
|
<![if ! IE]> <![endif]>Thermal |
|
|
|
|
|
|
|
|
D = 0.75 |
|
t2 |
|
|
|
|
D = 0.50 |
|
|
||
|
|
|
|
|
||
|
|
D = 0.33 |
|
Notes: |
|
|
<![if ! IE]> <![endif]>- |
|
Single pulse |
D = 0.25 |
|
1. Duty factor D = t1/t2 |
|
<![if ! IE]> <![endif]>thJC |
|
|
|
|||
|
(thermal resistance) |
D = 0.20 |
|
2. Peak TJ = PDM x ZthJC + TC |
|
|
<![if ! IE]> <![endif]>Z |
0.1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94313 |
For technical questions within your region, please contact one of the following: |
www.vishay.com |
Revision: 14-Jan-11 |
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com |
3 |