Vishay VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF Data Sheet
D-PAK (TO-252AA)
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
Base
cathode
4, 2
FEATURES
• Popular D-PAK outline
• Small foot print, surface mountable
• Low forward voltage drop
1
Anode
3
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
F
F
I
RM
T
max. 150 °C
J
Diode variation Single die
E
AS
3.0 A
20 V, 30 V, 40 V
0.49 V
20 mA at 125 °C
8 mJ
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DESCRIPTION
The VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 3.0 A
20 to 40 V
tp = 5 μs sine 490 A
3 Apk, TJ = 125 °C 0.49 V
- 40 to 150 °C
Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD320PbF VS-MBRD330PbF VS-MBRD340PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
20 30 40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
AS
50 % duty cycle at TL = 133 °C, rectangular waveform 3.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 75
TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
490
1.0 A
A
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
3 A
Maximum forward voltage drop
See fig. 1
V
FM
6 A 0.58 0.7
(1)
3 A
6 A 0.55 0.625
Maximum reverse leakage current
See fig. 2
I
RM
Typical junction capacitance C
Typical series inductance L
TJ = 25 °C
(1)
T
= 125 °C 10.7 20
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 - pF
T
Measured lead to lead 5 mm from package body 5.0 - nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.48 0.6
0.41 0.49
0.02 0.2
- 10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style D-PAK (similar to TO-252AA)
Note
(1)
thermal runaway condition for a diode on its own heatsink
(1)
J
Stg
R
thJC
R
thJA
DC operation
See fig. 4
- 40 to 150
- 40 to 175
6.0
80
°C
°C/W
0.3 g
0.01 oz.
MBRD320
MBRD330
MBRD340
V
mA
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94313
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 14-Jan-11
0.1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.8
1.2
0.6 1.0
0
1
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
10515202535404530
0
TJ = 25 °C
VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Schottky Rectifier, 3.0 A
100
10
1
0.1
- Reverse Current (mA)
0.01
R
I
0.001
Vishay Semiconductors
TJ = 150 °C
= 125 °C
T
J
= 100 °C
T
J
T
= 75 °C
J
T
= 50 °C
J
= 25 °C
T
J
1051520 4025 30 350
V
- Reverse Voltage (V)
R
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10
1
- Thermal Impedance (°C/W)
Document Number: 94313 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 14-Jan-11 DiodesAmericas@vishay.com
thJC
Z
0.1
0.00001
Single pulse
(thermal resistance)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.75
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
0.01
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
P
DM
t
1
t
2
1/t2
+ T
thJC
C
0.1
1
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