D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Base
cathode
1
N/C
15 mA at 125 °C
VS-MBRB735PbF, VS-MBRB745PbF
Vishay High Power Products
Schottky Rectifier, 7.5 A
FEATURES
• 150 °C TJ operation
2
3
Anode
7.5 A
35 V/45 V
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
The VS-MBRB7... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 7.5 A
35/45 V
tp = 5 μs sine 690 A
7.5 Apk, TJ = 125 °C 0.57 V
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB735PbF VS-MBRB745PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Non-repetitive peak surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
FSM
AS
AR
TC = 131 °C, rated V
5 μs sine or 3 μs rect. pulse
Surge applied at rated load condition halfwave single phase 60 Hz 150
TJ = 25 °C, IAS = 2 A, L = 3.5 mH 7 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
R
Following any rated load condition
and with rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
7.5
690
2A
A
Document Number: 94312 For technical questions, contact: diodestech@vishay.com
Revision: 16-Mar-10 1
www.vishay.com
VS-MBRB735PbF, VS-MBRB745PbF
Vishay High Power Products
Schottky Rectifier, 7.5 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A TJ = 25 °C 0.84
Maximum forward voltage drop V
FM
(1)
15 A 0.72
Maximum instantaneous reverse current I
Maximum junction capacitance C
Typical series inductance L
RM
T
S
T
= 125 °C 15
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 pF
Measured from top of terminal to mounting plane 8.0 nH
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 125 °C
J
Rated DC voltage
R
0.57
0.1
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
J
Stg
R
thJC
R
thCS
DC operation 3.0
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
2
PAK
- 65 to 150
- 65 to 175
2g
0.07 oz.
kgf · cm
(lbf · in)
MBRB735
MBRB745
V7.5 A
mA
°C
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94312
2 Revision: 16-Mar-10