VS-MBRB20..CTPbF, VS-MBR20..CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
VS-MBRB20..CTPbF
Base
common
cathode
2
1
node Anode
2
Common
cathode
2
D
PAK
3
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
VS-MBR20..CT-1PbF
Base
common
cathode
2
1
Anode Anode
15 mA at 125 °C
2
Common
cathode
TO-262
2 x 10 A
35 V/45 V
3
FEATURES
• 150 °C TJ operation
2
• Center tap D
PAK and TO-262 packages
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This center tap Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
I
FSM
V
T
RRM
F
J
Rectangular waveform (per device) 20
TC = 135 °C (per leg) 20
35/45 V
tp = 5 μs sine 1060 A
10 Apk, TJ = 125 °C 0.57 V
Range - 65 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
Document Number: 94305 For technical questions, contact: diodestech@vishay.com
Revision: 16-Mar-10 1
R
RWM
VS-MBRB2035CTPbF
VS-MBR2035CT-1PbF
35 45 V
VS-MBRB2045CTPbF
VS-MBR2045CT-1PbF
UNITS
www.vishay.com
VS-MBRB20..CTPbF, VS-MBR20..CT-1PbF Series
Vishay High Power Products
Schottky Rectifier, 2 x 10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
per device 20
Peak repetitive forward current per leg I
Non-repetitive peak surge current I
Non-repetitive avalanche energy per leg E
I
F(AV)
FRM
FSM
TC = 135 °C, rated V
R
Rated VR, square wave, 20 kHz, TC = 135 °C 20
5 μs sine or
3 μs rect. pulse
Following any rated load condition
and with rated V
RRM
applied
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
AS
10
1060
150
Current decaying linearly to zero in 1 μs
Repetitive avalanche current per leg I
AR
Frequency limited by T
V
= 1.5 x VR typical
A
maximum
J
2A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A TJ = 25 °C 0.84
Maximum forward voltage drop V
FM
(1)
20 A 0.72
Maximum instantaneous
reverse current
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
TJ = 25 °C
(1)
T
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 600 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 125 °C
J
= 125 °C 15
R
Rated DC voltage
0.57
0.1
0.354 V
17.6 mΩ
10 000 V/μs
A
V10 A
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
R
R
J
Stg
thJC
thCS
DC operation 2.0
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
Marking device
minimum
maximum 12 (10)
Non-lubricated threads
2
Case style D
PAK MBRB2045CT
Case style TO-262 MBR2045CT-1
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 16-Mar-10
- 65 to 150
- 65 to 175
°C
°C/W
2g
0.07 oz.
6 (5)
kgf · cm
(lbf · in)
Document Number: 94305