Vishay VS-MBRB1635PbF, VS-MBRB1645PbF Data Sheet
PRODUCT SUMMARY
D2PAK
Anode
1
3
Base
cathode
2
N/C
I
F(AV)
V
R
I
RM
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
FEATURES
• 150 °C TJ operation
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
16 A
35 V/45 V
40 mA at 125 °C
DESCRIPTION
This VS-MBRB16... Schottky rectifier has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 16 A
35/45 V
tp = 5 μs sine 1800 A
16 Apk, TJ = 125 °C 0.57 V
- 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1635PbF VS-MBRB1645PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Non-repetitive peak surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94304 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
F(AV)
FSM
AS
AR
TC = 134 °C, rated V
5 μs sine or 3 μs rect. pulse
Surge applied at rated load condition halfwave
single phase 60 Hz
TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
R
Following any rated
load condition and with
rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
16
1800
150
3.6 A
A
VS-MBRB1635PbF, VS-MBRB1645PbF
Vishay Semiconductors
Schottky Rectifier, 16 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
= 25 °C 0.63
T
(1)
Maximum forward voltage drop V
Maximum instantaneous
reverse current
I
RM
Maximum junction capacitance C
Typical series inductance L
FM
T
S
16 A
TJ = 25 °C
(1)
T
= 125 °C 40
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 1400 pF
Measured lead from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
J
T
= 125 °C 0.57
J
Rated DC voltage
0.2
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
R
R
J
Stg
thJC
thCS
DC operation 1.50
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
2
PAK MBRB1645
- 65 to 150
- 65 to 175
2g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C
°C/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94304
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Jun-10
1
10
100
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2
0
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
VS-MBRB1635PbF, VS-MBRB1645PbF
Schottky Rectifier, 16 A
100
10
1.0
0.1
0.01
- Reverse Current (mA)
0.001
R
I
0.0001
0
T
Vishay Semiconductors
TJ = 150 °C
= 125 °C
T
J
= 100 °C
J
T
= 50 °C
J
1051520
V
- Reverse Voltage (V)
R
= 75 °C
T
J
= 25 °C
T
J
25 30 35
40
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
45
1000
- Junction Capacitance (pF)
T
C
100
0
TJ = 25 °C
10 20 40 5030
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
Single pulse
0.01
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94304 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
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