Vishay VS-MBRB1035PbF, VS-MBRB1045PbF Data Sheet
D2PAK
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
VS-MBRB1035PbF, VS-MBRB1045PbF
Schottky Rectifier, 10 A
FEATURES
Base
cathode
2
1
N/C
10 A
35 V/45 V
15 mA at 125 °C
3
Anode
• 150 °C TJ operation
• TO-220 and D
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Halogen-free according to IEC 61249-2-21 definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
Vishay High Power Products
2
PAK packages
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 10
TC = 135 °C 20
35/45 V
tp = 5 μs sine 1060 A
10 Apk, TJ = 125 °C 0.57 V
Range - 65 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRB1035PbF VS-MBRB1045PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Peak repetitive forward current I
Non-repetitive surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 94302 For technical questions, contact: diodestech@vishay.com
Revision: 15-Mar-10 1
F(AV)
FRM
FSM
AS
AR
TC = 135 °C, rated V
Rated VR, square wave, 20 kHz, TC = 135 °C 20
5 μs sine or 3 μs rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
R
Following any rated load
condition and with rated
V
applied
RRM
maximum VA = 1.5 x VR typical
J
10
1060
150
2A
A
www.vishay.com
VS-MBRB1035PbF, VS-MBRB1045PbF
Vishay High Power Products
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A TJ = 25 °C 0.84
Maximum forward voltage drop V
FM
(1)
20 A 0.72
Maximum instantaneous reverse
current
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 15
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 600 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 125 °C
J
Rated DC voltage
R
0.57
0.1
0.354 V
17.6 mΩ
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style D
- 65 to 150
J
Stg
R
thJC
R
thCS
DC operation 2.0
Mounting surface, smooth and greased
(Only for TO-220)
2
PAK
- 65 to 175
0.50
2g
0.07 oz.
kgf · cm
(lbf · in)
MBRB1035
MBRB1045
V10 A
mA
°C
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94302
2 Revision: 15-Mar-10
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