Vishay VS-MBRA140TRPbF Data Sheet
SMA
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Schottky Rectifier, 1.0 A
Cathode Anode
1.0 A
40 V
26 mA at 125 °C
VS-MBRA140TRPbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRA140TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
40 V
tp = 5 μs sine 120 A
1.0 Apk, TJ = 125 °C 0.49 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRA140TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle non-repetitive
surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 118 °C, rectangular waveform
On PC board 9 mm
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 30
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
2
island (0.013 mm thick copper pad area)
Following any rated load
condition and with rated
V
applied
RRM
maximum VA = 1.5 x VR typical
J
1.0
120
1.0 A
A
Document Number: 94301 For technical questions, contact: diodestech@vishay.com
Revision: 04-Mar-10 1
www.vishay.com
VS-MBRA140TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
2 A 0.71
Maximum forward voltage drop
See fig. 1
V
FM
1 A
(1)
2 A 0.65
1 A
2 A 0.63
T
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
T
S
J
(1)
J
T
J
TJ = TJ maximum 0.36 V
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 25 °C
J
T
= 100 °C
J
T
= 125 °C
J
= 25 °C
V
= 100 °C 10
= Rated V
R
R
= 125 °C 26
R
0.55
0.5
0.49
0.5
104 mΩ
10 000 V/μs
V
mAT
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Device marking Case style SMA (similar D-64) V14
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
DC operation
(2)
R
thJL
R
thJA
See fig. 4
- 55 to 150 °C
35
80
0.07 g
0.002 oz.
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94301
2 Revision: 04-Mar-10
Loading...