Vishay VS-MBRA120TRPbF Data Sheet
SMA
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Schottky Rectifier, 1.0 A
Cathode Anode
1.0 A
20 V
20 mA at 125 °C
VS-MBRA120TRPbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-MBRA120TRPbF surface mount Schottky rectifier
has been designed for applications requiring low forward
drop and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
20 V
tp = 5 μs sine 310 A
1.0 Apk, TJ = 125 °C 0.34 V
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRA120TRPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
20 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 136 °C, rectangular waveform 1.0
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 40
TJ = 25 °C, IAS = 1 A, L = 4 mH 2.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
310
1.0 A
A
Document Number: 94300 For technical questions, contact: diodestech@vishay.com
Revision: 04-Mar-10 1
www.vishay.com
VS-MBRA120TRPbF
Vishay High Power Products
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
1 A
2 A 0.46 0.52
Maximum forward voltage drop V
FM
(1)
2 A 0.39 0.45
1 A
1 A
2 A 0.36 0.43
TJ = 25 °C
Maximum reverse leakage current I
Typical junction capacitance C
Typical series inductance L
RM
(1)
J
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 110 - pF
T
Measured lead to lead 5 mm from package body 2.0 - nH
S
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
T
= 25 °C
J
T
= 100 °C
J
T
= 125 °C
J
V
= 100 °C 2.0 6.0
= Rated V
R
R
= 125 °C 7.0 20
R
0.42 0.45
0.33 0.37
0.30 0.35
0.015 0.2
- 10 000 V/μs
V
mAT
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Device marking Case style SMA (similar D-64) V12A
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
(2)
R
thJL
R
thJA
DC operation 35
- 65 to 150 °C
80
0.07 g
0.002 oz.
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94300
2 Revision: 04-Mar-10
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