MBR350, MBR360
Vishay High Power Products
Schottky Rectifier, 3 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
Cathode Anode
enhanced mechanical strength and moisture resistance
•Guard ring for enhanced ruggedness and long term reliability
C-16
PRODUCT SUMMARY
IF(AV) |
3 A |
VR |
50/60 V |
VF at 3 A at 25 °C |
0.73 V |
IRM |
15 mA at 125 °C |
•Lead (Pb)-free plating
•Designed and qualified for industrial level
DESCRIPTION
The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL |
CHARACTERISTICS |
VALUES |
UNITS |
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IF(AV) |
Rectangular waveform |
3.0 |
A |
VRRM |
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50/60 |
V |
IFSM |
tp = 5 µs sine |
460 |
A |
VF |
3 Apk, TJ = 25 °C |
0.73 |
V |
TJ |
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- 40 to 150 |
°C |
VOLTAGE RATINGS
PARAMETER |
SYMBOL |
MBR350 |
MBR360 |
UNITS |
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Maximum DC reverse voltage |
VR |
50 |
60 |
V |
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Maximum working peak reverse voltage |
VRWM |
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ABSOLUTE MAXIMUM RATINGS
PARAMETER |
SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
50 % duty cycle at TL = 50 °C, rectangular waveform |
3.0 |
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See fig. 4 |
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A |
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Maximum peak one cycle |
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5 µs sine or 3 µs rect. pulse |
Following any rated load |
460 |
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non-repetitive surge current |
IFSM |
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condition and with rated |
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10 ms sine or 6 ms rect. pulse |
80 |
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See fig. 6 |
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VRRM applied |
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Non-repetitive avalanche energy |
EAS |
TJ = 25 °C, IAS = 1 A, L = 10 mH |
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5.0 |
mJ |
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Repetitive avalanche current |
IAR |
Current decaying linearly to zero in 1 µs |
1.0 |
A |
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Frequency limited by, TJ maximum VA = 1.5 x VR typical |
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Document Number: 93450 |
For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
Revision: 06-Nov-08 |
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MBR350, MBR360
Vishay High Power Products |
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Schottky Rectifier, 3 A |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
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TEST CONDITIONS |
VALUES |
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UNITS |
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1.0 A |
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0.58 |
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TJ = 25 °C |
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3.0 A |
0.73 |
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Maximum forward voltage drop |
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VFM (1) |
9.4 A |
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1.06 |
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V |
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See fig. 1 |
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1.0 A |
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0.49 |
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TJ = 125 °C |
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3.0 A |
0.64 |
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9.4 A |
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0.89 |
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Maximum reverse leakage current |
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TJ = 25 °C |
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0.6 |
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IRM (1) |
TJ = 100 °C |
VR = Rated VR |
8 |
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mA |
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See fig. 2 |
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TJ = 125 °C |
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15 |
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Typical junction capacitance |
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CT |
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VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C |
190 |
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pF |
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Typical series inductance |
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LS |
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Measured lead to lead 5 mm from package body |
9.0 |
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nH |
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Maximum voltage rate of change |
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dV/dt |
Rated VR |
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10 000 |
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V/µs |
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Note |
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(1) |
Pulse width < 300 µs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum junction and storage |
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T |
(1), T |
Stg |
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- 40 to 150 |
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°C |
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temperature range |
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J |
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Maximum thermal resistance, |
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RthJL (2) |
DC operation |
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30 |
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°C/W |
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junction to lead |
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See fig. 4 |
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Approximate weight |
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1.2 |
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g |
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0.042 |
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oz. |
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Marking device |
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Case style C-16 |
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MBR350 |
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MBR360 |
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Notes |
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(1) |
dPtot |
1 |
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------------- < -------------- thermal runaway condition for a diode on its own heatsink |
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dTJ |
RthJA |
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(2) |
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 93450 |
2 |
|
Revision: 06-Nov-08 |