Vishay VS-MBR350, VS-MBR360 Data Sheet

C-16
Schottky Rectifier, 3 A
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
Cathode Anode
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
MBR350, MBR360
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 3 A at 25 °C 0.73 V
F
I
RM
3 A
50/60 V
15 mA at 125 °C
DESCRIPTION
The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 3.0 A
50/60 V
tp = 5 µs sine 460 A
3 Apk, TJ = 25 °C 0.73 V
- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL MBR350 MBR360 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
50 60 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 4
Maximum peak one cycle non-repetitive surge current See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 50 °C, rectangular waveform 3.0
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 80
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 µs Frequency limited by, T
= 1 A, L = 10 mH 5.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
applied
RRM
460
1.0 A
A
Document Number: 93450 For technical questions, contact: diodes-tech@vishay.com Revision: 06-Nov-08 1
www.vishay.com
MBR350, MBR360
Vishay High Power Products
Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1.0 A
3.0 A 0.73
Maximum forward voltage drop See fig. 1
V
FM
9.4 A 1.06
(1)
1.0 A
3.0 A 0.64
9.4 A 0.89
TJ = 25 °C
Maximum reverse leakage current See fig. 2
Typical junction capacitance C
Typical series inductance L
(1)
I
RM
T
S
J
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 190 pF
Measured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
= 25 °C
J
T
= 125 °C
J
= 100 °C 8
= Rated V
V
R
R
= 125 °C 15
R
0.58
0.49
0.6
10 000 V/µs
V
mAT
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to lead
Approximate weight
Marking device Case style C-16
Notes
dP
(1)
------------­dT
(2)
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------< R
thJA
(1)
T
, T
J
Stg
DC operation
(2)
R
thJL
See fig. 4
- 40 to 150 °C
30 °C/W
1.2 g
0.042 oz.
MBR350
MBR360
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93450
2 Revision: 06-Nov-08
MBR350, MBR360
Schottky Rectifier, 3 A
100
(A)
F
10
1
Instantaneous Forward Current - I
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Vishay High Power Products
1000
(pF)
T
100
Junction Capacitance - C
10
0 40 80 120 160
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
160
140
120
100
80
60
Square wave (D = 0.50)
40
80% Rated Vr applied
20
see note (1)
Allowable Lead Temperature (°C)
0
012345
Average Forward Current - I
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
T = 25˚C
J
Reverse Voltage - V R (V)
DC
F(AV)
(A)
100
T = 150˚C
J
10
(mA)
R
1
0.1
0.01
Reverse Current - I
0.001 0204060
125˚C
25˚C
Reverse Voltage - V R (V)
Fig. 2 - Typical Values of Reverse Current vs.
3
2.5
2
RMS Limit
1.5
1
0.5
Average Power Loss (Watts)
0
00.511.522.533.544.55
Average Forward Current - I
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
DC
DC
F(AV)
Fig. 5 - Forward Power Loss Characteristics
(A)
Reverse Voltage
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 93450 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08 3
MBR350, MBR360
Vishay High Power Products
(A)
FSM
Non-Repetitive Surge Current - I
ORDERING INFORMATION TABLE
Device code
Schottky Rectifier, 3 A
1000
100
At Any Rated Load Condition And With rated Vrrm Applied Following Surge
10
10 100 1000 10000
Square Wave Pulse Duration - t p(microsec)
Fig. 6 - Maximum Non-Repetitive Surge Current
MBR 3 60 TR
1324
1 - Schottky MBR series
2 - Current rating: 3 = 3 A
3 - Voltage rating
- TR = Tape and reel package (1200 pcs)
4
50 = 50 V 60 = 60 V
None = Box package (500 pcs)
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95242
Part marking information http://www.vishay.com/doc?95304
Packaging information http://www.vishay.com/doc?95309
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 4 Revision: 06-Nov-08
Document Number: 93450
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Axial DO-201AD (C-16)
21.0 (0.83) MIN. (2 places)
Ø 1.40 (0.055) Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
10.0 (0.39) MAX.
Cathode band
21.0 (0.83) MIN. (2 places)
10.0 (0.39) MAX.
2.54 (0.100) MAX. Flash (2 places)
Ø 1.40 (0.055) Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Document Number: 95242 For technical questions, contact: indmodules@vishay.com Revision: 20-Nov-08 1
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