Vishay VS-MBR350, VS-MBR360 Data Sheet

MBR350, MBR360

Vishay High Power Products

Schottky Rectifier, 3 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy encapsulation for

Cathode Anode

enhanced mechanical strength and moisture resistance

•Guard ring for enhanced ruggedness and long term reliability

C-16

PRODUCT SUMMARY

IF(AV)	3 A
VR	50/60 V
VF at 3 A at 25 °C	0.73 V
IRM	15 mA at 125 °C

•Lead (Pb)-free plating

•Designed and qualified for industrial level

DESCRIPTION

The MBR350, MBR360 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	3.0	A
VRRM		50/60	V
IFSM	tp = 5 µs sine	460	A
VF	3 Apk, TJ = 25 °C	0.73	V
TJ		- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	MBR350	MBR360	UNITS
	Maximum DC reverse voltage	VR	50	60	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TL = 50 °C, rectangular waveform		3.0
	See fig. 4
						A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated load	460
	non-repetitive surge current	IFSM		condition and with rated
			10 ms sine or 6 ms rect. pulse		80
	See fig. 6			VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1 A, L = 10 mH		5.0	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs		1.0	A
			Frequency limited by, TJ maximum VA = 1.5 x VR typical

Document Number: 93450	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 06-Nov-08		1

MBR350, MBR360

Vishay High Power Products							Schottky Rectifier, 3 A
	ELECTRICAL SPECIFICATIONS
	PARAMETER			SYMBOL			TEST CONDITIONS		VALUES		UNITS
							1.0 A		0.58
								TJ = 25 °C
							3.0 A		0.73
	Maximum forward voltage drop			VFM (1)			9.4 A		1.06		V
	See fig. 1						1.0 A		0.49
								TJ = 125 °C
							3.0 A		0.64
							9.4 A		0.89
	Maximum reverse leakage current						TJ = 25 °C		0.6
				IRM (1)			TJ = 100 °C	VR = Rated VR	8		mA
	See fig. 2
							TJ = 125 °C		15
	Typical junction capacitance				CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		190		pF
	Typical series inductance				LS		Measured lead to lead 5 mm from package body		9.0		nH
	Maximum voltage rate of change				dV/dt		Rated VR		10 000		V/µs
Note
(1)	Pulse width < 300 µs, duty cycle < 2 %
	THERMAL - MECHANICAL SPECIFICATIONS
	PARAMETER			SYMBOL			TEST CONDITIONS		VALUES		UNITS
	Maximum junction and storage			T	(1), T	Stg			- 40 to 150		°C
	temperature range			J
	Maximum thermal resistance,			RthJL (2)			DC operation		30		°C/W
	junction to lead						See fig. 4
	Approximate weight								1.2		g
									0.042		oz.
	Marking device						Case style C-16		MBR350
									MBR360
Notes
(1)	dPtot	1
	------------- < -------------- thermal runaway condition for a diode on its own heatsink
	dTJ	RthJA
(2)	Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93450
2		Revision: 06-Nov-08