Vishay VS-HFA25TB60PbF Data Sheet
VS-HFA25TB60PbF
TO-220AC
Anode
1
3
Cathode
Base
cathode
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 25 A
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 23 ns
rr
max. 150 °C
T
J
Diode variation Single die
25 A
600 V
1.7 V
HEXFRED
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA25TB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25TB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25TB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
RRM
and Q
rr
®
product line features
RRM
) and
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94065 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This document is subject to change without notice.
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 25
TC = 25 °C 125
T
= 100 °C 50
C
Stg
600 V
225
100
- 55 to + 150 °C
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ASingle pulse forward current I
W
VS-HFA25TB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of fall of recovery
current during t
b
See fig. 11 and 12
IR = 100 μA 600 - -
IF = 25 A
I
= 50 A - 1.5 2.0
F
I
= 25 A, TJ = 125 °C - 1.3 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 600 2000
J
VR = 200 V See fig. 3 - 55 100 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 -
TJ = 25 °C
TJ = 125 °C - 105 160
TJ = 25 °C - 4.5 10
TJ = 125 °C - 8.0 15
rr1
rr2
TJ = 25 °C - 112 375
TJ = 125 °C - 420 1200
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
®
I
= 25 A
F
/dt = 200 A/μs
dI
F
= 200 V
V
R
See fig. 1
See fig. 2
-1.31.7
-1.520
-8.0-nH
-5075
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA25TB60
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2 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063” from case (1.6 mm) for 10 s - - 300 °C
--1.0
Typical socket mount - - 80
K/W
Mounting surface, flat, smooth and greased - 0.5 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
This document is subject to change without notice.
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HEXFRED
I
F
- Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.6 1.0 1.4 1.8 2.2 2.6
1
10
1000
94065_01
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
94065_04
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
®
Ultrafast Soft Recovery Diode, 25 A
10 000
TJ = 150 °C
1000
VS-HFA25TB60PbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
1000
100
- Junction Capacitance (pF)
T
C
10
1101001000
94065_03
Fig. 3 - Typical Junction Capacitance vs.
100
- Reverse Current (µA)
R
0.1
I
0.01
94065_02
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
TJ = 25 °C
VR - Reverse Voltage (V)
Reverse Voltage
TJ = 125 °C
10
1
TJ = 25 °C
0 100 200 300 500400 600
VR - Reverse Voltage (V)
Document Number: 94065 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
This document is subject to change without notice.
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics
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