Vishay VS-HFA25PB60PbF Data Sheet
VS-HFA25PB60PbF
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 25 A
Cathode
to base
4
2
1
Cathode
TO-247AC modified
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 23 ns
rr
max. 150 °C
T
J
Diode variation Single die
Anode
2
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
3
25 A
600 V
1.7 V
VS-HFA25PB60PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A continuous current, the
VS-HFA25PB60PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
®
product line features
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA25PB60PbF is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
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Revision: 23-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 25
TC = 25 °C 151
T
= 100 °C 60
C
Stg
600 V
225
100
W
- 55 to + 150 °C
www.vishay.com/doc?91000
ASingle pulse forward current I
VS-HFA25PB60PbF
Vishay Semiconductors
HEXFRED
Ultrafast Soft Recovery Diode, 25 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6, 10
Reverse recovery charge
See fig. 7, 10
Peak rate of fall of recovery
current during t
b
See fig. 8, 10
IR = 100 μA 600 - -
IF = 25 A
I
= 50 A - 1.5 2.0
F
I
= 25 A, TJ = 125 °C - 1.3 1.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 600 2000
J
VR = 200 V See fig. 3 - 55 100 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 -
TJ = 25 °C
TJ = 125 °C - 105 160
TJ = 25 °C - 4.5 10
TJ = 125 °C - 8.0 15
rr1
rr2
TJ = 25 °C - 112 375
TJ = 125 °C - 420 1200
/dt1 TJ = 25 °C - 250 -
/dt2 TJ = 125 °C - 160 -
®
I
= 25 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-1.31.7
-1.520
-12-nH
-5075
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-247AC modified (JEDEC) HFA25PB60
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
- - 0.83
Typical socket mount - - 40
Mounting surface, flat, smooth and greased - 0.25 -
-6.0- g
-0.21- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-May-11
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K/W
kgf · cm
(lbf · in)
100
I
R
- Reverse Current (µA)
VR - Reverse Voltage (V)
0 100 200 300 500400 600
0.01
0.1
1
10
100
1000
10 000
94064_02
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
1101001000
10
1000
100
94064_03
TJ = 25 °C
10
1
- Instantaneous Forward Current (A)
F
I
0.6 1.0 1.4 1.8 2.2 2.6
94064_01
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
Fig. 2 - Typical Reverse Current vs.
VS-HFA25PB60PbF
Vishay Semiconductors
Reverse Voltage
Document Number: 94064 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Thermal Response
thJC
Z
94064_04
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
P
0.1
Single pulse
(thermal response)
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DM
t
1
t
2
1/t2
+ T
thJC
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
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C
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