Vishay VS-HFA16TB120SPbF Data Sheet

VS-HFA16TB120SPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 16 A

D2PAK

PRODUCT SUMMARY

VR 1200 V

V

at 16 A at 25 °C 3 V

F

I

F(AV)

(typical) 30 ns

t

rr

T

(maximum) 150 °C

J

Q

(typical) 260 nC

rr

dI

/dt (typical) at 125 °C 76 A/μs

(rec)M

(typical) 5.8 A

I

RRM

N/C

HEXFRED

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

2

• Very low I

• Very low Q

RRM

rr

• Specified at operating conditions

• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C

1

Anode

3

• Halogen-free according to IEC 61249-2-21
definition

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

VS-HFA16TB120SPbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and

16 A

advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120SPbF is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED

®

product
line features extremely low values of peak recovery current
(I

) and does not exhibit any tendency to “snap-off”

RRM

during the t

portion of recovery. The HEXFRED

b

features combine to offer designers a rectifier with lower
noise and significantly lower switching losses in both the
diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED
VS-HFA16TB120SPbF is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Maximum continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 94594 For technical questions, contact: [e-mail]
Revision: 24-Feb-10 1

J

F

FSM

FRM

, T

R

TC = 100 °C 16

D

TC = 25 °C 151

T

= 100 °C 60

C

Stg

1200 V

190

64

W

- 55 to + 150 °C

www.vishay.com

ASingle pulse forward current I

VS-HFA16TB120SPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 16 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

S

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

t

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

rr1

rr2

Reverse recovery time
See fig. 5 and 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of
recovery current during t
See fig. 8

b

IR = 100 μA 1200 - -

IF = 16 A

I

= 32 A - 3.2 3.93

F

I

= 16 A, TJ = 125 °C - 2.3 2.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 375 2000

J

VR = 200 V See fig. 3 - 27 40 pF

T

See fig. 1

See fig. 2

-2.53.0

-0.7520

Measured lead to lead 5 mm from package body - 8.0 - nH

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 -

TJ = 25 °C

- 90 135

TJ = 125 °C - 164 245

TJ = 25 °C - 5.8 10

TJ = 125 °C - 8.3 15

TJ = 25 °C - 260 675

TJ = 125 °C - 680 1838

I

= 16 A

F

dI

/dt = 200 A/μs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 120 -

/dt2 TJ = 125 °C - 76 -

V

μA

nst

A

nC

A/μs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

lead

R

thJC

R

thJA

Weight

Marking device Case style D

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2 Revision: 24-Feb-10

0.063" from case (1.6 mm) for 10 s - - 300 °C

--0.83

K/W

Typical socket mount - - 80

-2.0- g

-0.07- oz.

2

PAK HFA16TB120S

Document Number: 94594

VS-HFA16TB120SPbF

100

10

0.1

- Instantaneous Forward Current (A)

F

I

94594_01

HEXFRED

Ultrafast Soft Recovery Diode, 16 A

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

1

02468

VFM - Forward Voltage Drop (V)

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

1000

®

1000

100

10

1

- Reverse Current (μA)

0.1

R

I

0.01

94594_02

Vishay High Power Products

TJ = 150 °C

TJ = 125 °C

TJ = 25 °C

0200 800400 1000600 1200

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

100

10

- Junction Capacitance (pF)

T

C

1

1 10 100 10 0001000

94594_03

VR - Reverse Voltage (V)

TJ = 25 °C

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

1

D = 0.50
D = 0.20

0.1

Single pulse

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1 100110

94594_04

(thermal response)

Fig. 4 - Maximum Thermal Impedance Z

D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Characteristics (Per Leg)

thJC

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

P

DM

t

1

t

2

1/t2

+ T

thJC

C

Document Number: 94594 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 24-Feb-10 3