Vishay VS-HFA16TB120PbF Data Sheet
VS-HFA16TB120PbF
Vishay Semiconductors
Ultrasoft Soft Recovery Diode, 16 A
Base
cathode
2
1
Cathode
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
V
R
V
at I
F
F
t
(typ.) 30 ns
rr
max. 150 °C
T
J
Diode variation Single die
Anode
TO-220AC
HEXFRED
®
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
3
16 A
1200 V
3.0 V
VS-HFA16TB120PbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120PbF is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED
®
product line
features extremely low values of peak recovery current
(I
) and does not exhibit any tendency to “snap-off”
RRM
during the t
portion of recovery. The HEXFRED features
b
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120PbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 94060 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
R
F
FSM
FRM
D
, T
J
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TC = 100 °C 16
TC = 25 °C 151
T
= 100 °C 60
C
Stg
1200 V
190
64
W
- 55 to + 150 °C
www.vishay.com/doc?91000
ASingle pulse forward current I
VS-HFA16TB120PbF
Vishay Semiconductors
HEXFRED
Ultrasoft Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
dI
dI
t
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
t
rr1
rr2
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of
recovery current during t
See fig. 8
b
IR = 100 μA 1200 - -
IF = 16 A
I
= 32 A - 3.2 3.93
F
I
= 16 A, TJ = 125 °C - 2.3 2.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 375 2000
J
VR = 200 V See fig. 3 - 27 40 pF
T
Measured lead to lead 5 mm from package
S
body
rr
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 -
TJ = 25 °C
TJ = 125 °C - 164 245
TJ = 25 °C - 5.8 10
TJ = 125 °C - 8.3 15
rr1
rr2
TJ = 25 °C - 260 675
TJ = 125 °C - 680 1838
/dt1 TJ = 25 °C - 120 -
/dt2 TJ = 125 °C - 76 -
®
I
= 16 A
F
dI
/dt = 200 A/μs
F
= 200 V
V
R
See fig. 1
See fig. 2
-2.53.0
-0.7520
-8.0-nH
- 90 135
V
μA
nst
A
nC
A/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
R
R
R
lead
thJC
thJA
thCS
Weight
Mounting torque
Marking device Case style TO-220AC HFA16TB120
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94060
2 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.063" from case (1.6 mm) for 10 s - - 300 °C
- - 0.83
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.50 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 24-May-11
This document is subject to change without notice.
www.vishay.com/doc?91000
K/W
kgf · cm
(lbf · in)
HEXFRED
94060_01
VFM - Forward Voltage Drop (V)
0
0.1
1
100
2
468
I
F
- Instantaneous Forward Current (A)
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
200 600
400
0.1
0.01
94060_02
1
10
100
1000
800
1000
1200
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
1 100 1000
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
94060_03
10
1
10
1000
10 000
T
J
= 25 °C
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
0.01
94060_04
10
100
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
®
Ultrasoft Soft Recovery Diode, 16 A
VS-HFA16TB120PbF
Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Document Number: 94060 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This document is subject to change without notice.
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